中国物理B ›› 2018, Vol. 27 ›› Issue (1): 18101-018101.doi: 10.1088/1674-1056/27/1/018101

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Facilitative effect of graphene quantum dots in MoS2 growth process by chemical vapor deposition

Lu Zhang(张璐), Yongsheng Wang(王永生), Yanfang Dong(董艳芳), Xuan Zhao(赵宣), Chen Fu(付晨), Dawei He(何大伟)   

  1. Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China
  • 收稿日期:2017-02-18 修回日期:2017-09-27 出版日期:2018-01-05 发布日期:2018-01-05
  • 通讯作者: Dawei He E-mail:dwhe@bjtu.edu.cn
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant Nos. 2016YFA0202300 and 2016YFA0202302), the National Natural Science Foundation of China (Grant Nos. 61527817, 61335006, and 61378073), and the Overseas Expertise Introduction Center for Discipline Innovation, 111 Center, China.

Facilitative effect of graphene quantum dots in MoS2 growth process by chemical vapor deposition

Lu Zhang(张璐), Yongsheng Wang(王永生), Yanfang Dong(董艳芳), Xuan Zhao(赵宣), Chen Fu(付晨), Dawei He(何大伟)   

  1. Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China
  • Received:2017-02-18 Revised:2017-09-27 Online:2018-01-05 Published:2018-01-05
  • Contact: Dawei He E-mail:dwhe@bjtu.edu.cn
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant Nos. 2016YFA0202300 and 2016YFA0202302), the National Natural Science Foundation of China (Grant Nos. 61527817, 61335006, and 61378073), and the Overseas Expertise Introduction Center for Discipline Innovation, 111 Center, China.

RichHTML

0

PDF (PC)

331

赞

摘要： The substrate treatment with seeding promoter can promote the two-dimensional material lateral growth in chemical vapor deposition (CVD) process. Herein, graphene quantum dots (GQDs) as a novel seeding promoter were used to obtain uniform large-area MoS2 monolayer. The obtained monolayer MoS2 films were confirmed by optical microscope, scanning electron microscope, Raman and photoluminescence spectra. Raman mapping revealed that the MoS2 monolayer was largely homogeneous.

关键词: MoS2, seed, graphene quantum dots (GQDs), continuous film

Abstract: The substrate treatment with seeding promoter can promote the two-dimensional material lateral growth in chemical vapor deposition (CVD) process. Herein, graphene quantum dots (GQDs) as a novel seeding promoter were used to obtain uniform large-area MoS2 monolayer. The obtained monolayer MoS2 films were confirmed by optical microscope, scanning electron microscope, Raman and photoluminescence spectra. Raman mapping revealed that the MoS2 monolayer was largely homogeneous.

Key words: MoS2, seed, graphene quantum dots (GQDs), continuous film

中图分类号:  (Nanoscale materials and structures: fabrication and characterization)

  • 81.07.-b
81.07.Ta (Quantum dots) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 81.10.-h (Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)