中国物理B ›› 2017, Vol. 26 ›› Issue (6): 68103-068103.doi: 10.1088/1674-1056/26/6/068103

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Anomalous temperature dependence of photoluminescence spectra from InAs/GaAs quantum dots grown by formation-dissolution-regrowth method

Guan-Qing Yang(杨冠卿), Shi-Zhu Zhang(张世著), Bo Xu(徐波), Yong-Hai Chen(陈涌海), Zhan-Guo Wang(王占国)   

  1. 1 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2 University of Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2017-01-17 修回日期:2017-03-27 出版日期:2017-06-05 发布日期:2017-06-05
  • 通讯作者: Bo Xu E-mail:srex@semi.ac.cn
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No. 2013CB632104) and the National Key Research and Development Program of China (Grant No. 2016YFB0402302).

Anomalous temperature dependence of photoluminescence spectra from InAs/GaAs quantum dots grown by formation-dissolution-regrowth method

Guan-Qing Yang(杨冠卿)1,2, Shi-Zhu Zhang(张世著)1,2, Bo Xu(徐波)1,2, Yong-Hai Chen(陈涌海)1,2, Zhan-Guo Wang(王占国)1,2   

  1. 1 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2 University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2017-01-17 Revised:2017-03-27 Online:2017-06-05 Published:2017-06-05
  • Contact: Bo Xu E-mail:srex@semi.ac.cn
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No. 2013CB632104) and the National Key Research and Development Program of China (Grant No. 2016YFB0402302).

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摘要： Two kinds of InAs/GaAs quantum dot (QD) structures are grown by molecular beam epitaxy in formation-dissolution-regrowth method with different in-situ annealing and regrowth processes. The densities and sizes of quantum dots are different for the two samples. The variation tendencies of PL peak energy, integrated intensity, and full width at half maximum versus temperature for the two samples are analyzed, respectively. We find the anomalous temperature dependence of the InAs/GaAs quantum dots and compare it with other previous reports. We propose a new energy band model to explain the phenomenon. We obtain the activation energy of the carrier through the linear fitting of the Arrhenius curve in a high temperature range. It is found that the GaAs barrier layer is the major quenching channel if there is no defect in the material. Otherwise, the defects become the major quenching channel when some defects exist around the QDs.

关键词: quantum dot, photoluminescence, anomalous temperature dependence, activation energy

Abstract: Two kinds of InAs/GaAs quantum dot (QD) structures are grown by molecular beam epitaxy in formation-dissolution-regrowth method with different in-situ annealing and regrowth processes. The densities and sizes of quantum dots are different for the two samples. The variation tendencies of PL peak energy, integrated intensity, and full width at half maximum versus temperature for the two samples are analyzed, respectively. We find the anomalous temperature dependence of the InAs/GaAs quantum dots and compare it with other previous reports. We propose a new energy band model to explain the phenomenon. We obtain the activation energy of the carrier through the linear fitting of the Arrhenius curve in a high temperature range. It is found that the GaAs barrier layer is the major quenching channel if there is no defect in the material. Otherwise, the defects become the major quenching channel when some defects exist around the QDs.

Key words: quantum dot, photoluminescence, anomalous temperature dependence, activation energy

中图分类号:  (Quantum dots)

  • 81.07.Ta
78.55.-m (Photoluminescence, properties and materials) 82.20.Pm (Rate constants, reaction cross sections, and activation energies)