中国物理B ›› 2003, Vol. 12 ›› Issue (1): 94-96.doi: 10.1088/1009-1963/12/1/317
王守国, 张义门, 张玉明
Wang Shou-Guo (王守国)ab, Zhang Yi-Men (张义门)a, Zhang Yu-Ming (张玉明)a
摘要: Based on the MIS model, a simple method to extract parameters of SiC Schottky diodes is presented using the $I$-$V$ characteristics. The interface oxide capacitance $C_\i$ is extracted for the first time, as far as we know. Parameters of 4H-SiC Schottky diodes fabricated for testing in this paper are: the ideality factor $n$, the series resistance $R_{\rm s}$, the zero-field barrier height $\phi_{\rm B0}$, the interface state density $D_{\rm it}$, the interface oxide capacitance $C_\i$ and the neutral level of interface states $\phi_0$.
中图分类号: (Junction diodes)