Broadband chirped InAs quantum-dot superluminescent diodes with a small spectral dip of 0.2 dB

doi:10.1088/1674-1056/ac657f

中国物理B ›› 2022, Vol. 31 ›› Issue (9): 98104-098104.doi: 10.1088/1674-1056/ac657f

Broadband chirped InAs quantum-dot superluminescent diodes with a small spectral dip of 0.2 dB

Hong Wang(王虹)^1,2, Zunren Lv(吕尊仁)^1,2,†, Shuai Wang(汪帅)^1,2, Haomiao Wang(王浩淼)^1,2, Hongyu Chai(柴宏宇)^1,2, Xiaoguang Yang(杨晓光)^1,2, Lei Meng(孟磊)^1,2, Chen Ji(吉晨)^3,4, and Tao Yang(杨涛)^1,2,‡

1 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China;
4 Zhejiang Laboratory, Hangzhou 310027, China

收稿日期:2021-12-31 修回日期:2022-03-25 接受日期:2022-04-08 出版日期:2022-08-19 发布日期:2022-09-03
通讯作者: Zunren Lv, Tao Yang E-mail:lvzunren@semi.ac.cn;tyang@semi.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 62035012, 62074143, and 62004191) and Zhejiang Lab (Grant No. 2020LC0AD02).

Broadband chirped InAs quantum-dot superluminescent diodes with a small spectral dip of 0.2 dB

1 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China;
4 Zhejiang Laboratory, Hangzhou 310027, China

Received:2021-12-31 Revised:2022-03-25 Accepted:2022-04-08 Online:2022-08-19 Published:2022-09-03
Contact: Zunren Lv, Tao Yang E-mail:lvzunren@semi.ac.cn;tyang@semi.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 62035012, 62074143, and 62004191) and Zhejiang Lab (Grant No. 2020LC0AD02).

摘要/Abstract

摘要： We report on the fabrication and characterization of InAs/GaAs chirped multilayer quantum-dot superluminescent diodes (CMQD-SLDs) with and without direct Si doping in QDs. It was found that both the output power and the spectral width of the CMQD-SLDs were significantly enhanced by direct Si doping in the QDs. The output power and spectral width have been increased by approximately 18.3% and 40%, respectively. Moreover, we shortened the cavity length of the doped CMQD-SLD and obtained a spectral width of 106 nm. In addition, the maximum output power and spectral width of the CMQD-SLD doped directly with Si can be further increased to 16.6 mW and 114 nm, respectively, through anti-reflection coating and device packaging. The device exhibited the smallest spectral dip of 0.2 dB when the spectrum was widest. The improved performances of the doped CMQD-SLD can be attributed to the direct doping of Si in the QDs, optimization of device structure and device packaging.

关键词: chirped quantum-dot, superluminescent diodes, direct Si doping

Abstract: We report on the fabrication and characterization of InAs/GaAs chirped multilayer quantum-dot superluminescent diodes (CMQD-SLDs) with and without direct Si doping in QDs. It was found that both the output power and the spectral width of the CMQD-SLDs were significantly enhanced by direct Si doping in the QDs. The output power and spectral width have been increased by approximately 18.3% and 40%, respectively. Moreover, we shortened the cavity length of the doped CMQD-SLD and obtained a spectral width of 106 nm. In addition, the maximum output power and spectral width of the CMQD-SLD doped directly with Si can be further increased to 16.6 mW and 114 nm, respectively, through anti-reflection coating and device packaging. The device exhibited the smallest spectral dip of 0.2 dB when the spectrum was widest. The improved performances of the doped CMQD-SLD can be attributed to the direct doping of Si in the QDs, optimization of device structure and device packaging.

Key words: chirped quantum-dot, superluminescent diodes, direct Si doping

中图分类号: (Quantum dots)

81.07.Ta

81.16.Dn (Self-assembly) 85.35.Be (Quantum well devices (quantum dots, quantum wires, etc.)) 85.60.Jb (Light-emitting devices)

Hong Wang(王虹), Zunren Lv(吕尊仁), Shuai Wang(汪帅), Haomiao Wang(王浩淼), Hongyu Chai(柴宏宇), Xiaoguang Yang(杨晓光), Lei Meng(孟磊), Chen Ji(吉晨), and Tao Yang(杨涛). Broadband chirped InAs quantum-dot superluminescent diodes with a small spectral dip of 0.2 dB[J]. 中国物理B, 2022, 31(9): 98104-098104.

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Broadband chirped InAs quantum-dot superluminescent diodes with a small spectral dip of 0.2 dB

Broadband chirped InAs quantum-dot superluminescent diodes with a small spectral dip of 0.2 dB

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