中国物理B ›› 2018, Vol. 27 ›› Issue (12): 128105-128105.doi: 10.1088/1674-1056/27/12/128105

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

1.3-μm InAs/GaAs quantum dots grown on Si substrates

Fu-Hui Shao(邵福会), Yi Zhang(张一), Xiang-Bin Su(苏向斌), Sheng-Wen Xie(谢圣文), Jin-Ming Shang(尚金铭), Yun-Hao Zhao(赵云昊), Chen-Yuan Cai(蔡晨元), Ren-Chao Che(车仁超), Ying-Qiang Xu(徐应强), Hai-Qiao Ni(倪海桥), Zhi-Chuan Niu(牛智川)   

  1. 1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100083, China;
    3 Laboratory of Advanced Materials, Department of Materials Science, Collaborative Innovation Center of Chemistry for Energy Materials(iChEM), Fudan University, Shanghai 200433, China
  • 收稿日期:2018-08-14 修回日期:2018-09-26 出版日期:2018-12-05 发布日期:2018-12-05
  • 通讯作者: Zhi-Chuan Niu E-mail:zcniu@semi.ac.cn
  • 基金资助:

    Project supported by the National Key Research and Development Program of China (Grant No. 2018YFA0306101), the Scientific Instrument Developing Project of Chinese Academy of Sciences (Grant No. YJKYYQ20170032), and the National Natural Science Foundation of China (Grant Nos. 61790581, 61435012, and 61505196).

1.3-μm InAs/GaAs quantum dots grown on Si substrates

Fu-Hui Shao(邵福会)1,2, Yi Zhang(张一)1,2, Xiang-Bin Su(苏向斌)1,2, Sheng-Wen Xie(谢圣文)1,2, Jin-Ming Shang(尚金铭)1,2, Yun-Hao Zhao(赵云昊)3, Chen-Yuan Cai(蔡晨元)3, Ren-Chao Che(车仁超)3, Ying-Qiang Xu(徐应强)1,2, Hai-Qiao Ni(倪海桥)1,2, Zhi-Chuan Niu(牛智川)1,2   

  1. 1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100083, China;
    3 Laboratory of Advanced Materials, Department of Materials Science, Collaborative Innovation Center of Chemistry for Energy Materials(iChEM), Fudan University, Shanghai 200433, China
  • Received:2018-08-14 Revised:2018-09-26 Online:2018-12-05 Published:2018-12-05
  • Contact: Zhi-Chuan Niu E-mail:zcniu@semi.ac.cn
  • Supported by:

    Project supported by the National Key Research and Development Program of China (Grant No. 2018YFA0306101), the Scientific Instrument Developing Project of Chinese Academy of Sciences (Grant No. YJKYYQ20170032), and the National Natural Science Foundation of China (Grant Nos. 61790581, 61435012, and 61505196).

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摘要：

We compare the effect of InGaAs/GaAs strained-layer superlattice (SLS) with that of GaAs thick buffer layer (TBL) serving as a dislocation filter layer. The InGaAs/GaAs SLS is found to be more effective than GaAs TBL in blocking the propagation of threading dislocations, which are generated at the interface between the GaAs buffer layer and the Si substrate. Through testing and analysis, we conclude that the weaker photoluminescence for quantum dots (QDs) on Si substrate is caused by the quality of capping In0.15Ga0.85As and upper GaAs. We also find that the periodic misfits at the interface are related to the initial stress release of GaAs islands, which guarantees that the upper layers are stress-free.

关键词: quantum dots, dislocation filter, molecular beam epitaxy (MBE), silicon photonics

Abstract:

We compare the effect of InGaAs/GaAs strained-layer superlattice (SLS) with that of GaAs thick buffer layer (TBL) serving as a dislocation filter layer. The InGaAs/GaAs SLS is found to be more effective than GaAs TBL in blocking the propagation of threading dislocations, which are generated at the interface between the GaAs buffer layer and the Si substrate. Through testing and analysis, we conclude that the weaker photoluminescence for quantum dots (QDs) on Si substrate is caused by the quality of capping In0.15Ga0.85As and upper GaAs. We also find that the periodic misfits at the interface are related to the initial stress release of GaAs islands, which guarantees that the upper layers are stress-free.

Key words: quantum dots, dislocation filter, molecular beam epitaxy (MBE), silicon photonics

中图分类号:  (Molecular, atomic, ion, and chemical beam epitaxy)

  • 81.15.Hi
81.07.Ta (Quantum dots) 83.85.St (Stress relaxation ?) 85.35.Be (Quantum well devices (quantum dots, quantum wires, etc.))