中国物理B ›› 2021, Vol. 30 ›› Issue (1): 18106-.doi: 10.1088/1674-1056/abcfa4

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  • 收稿日期:2020-09-17 修回日期:2020-11-06 接受日期:2020-12-02 出版日期:2020-12-17 发布日期:2020-12-30

Continuous-wave operation of InAs/InP quantum dot tunable external-cavity laser grown by metal-organic chemical vapor deposition

Yan Wang(王岩)1, Shuai Luo(罗帅)4,5, Haiming Ji(季海铭)4,5, Di Qu(曲迪)1,2,†, and Yidong Huang(黄翊东)3   

  1. 1 Innovation Center of Advanced Optoelectronic Chip, Institute for Electronics and Information Technology in Tianjin, Tsinghua University, Tianjin 300467, China; 2 Tianjin H-Chip Technology Group Corporation, Tianjin 300467, China; 3 Department of Electronic Engineering, Tsinghua University, Beijing 100084, China; 4 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; 5 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2020-09-17 Revised:2020-11-06 Accepted:2020-12-02 Online:2020-12-17 Published:2020-12-30
  • Contact: Corresponding author. E-mail: qudi@hchiptech.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61974141), Tianjin Municipal Science and Technology Bureau, and Science and Technology Innovation Bureau of China-Singapore Tianjin Eco-City.

Abstract: We demonstrate high-performance broadband tunable external-cavity lasers (ECLs) with the metal-organic chemical vapor deposition (MOCVD) grown InAs/InP quantum dots (QDs) structures. Without cavity facet coatings, the 3-dB spectral bandwidth of the Fabry-Perot (FP) laser is approximately 10.8 nm, while the tuning bandwidth of ECLs is 45 nm. Combined with the anti-reflection (AR) /high-reflection (HR) facet coating, a 92 nm bandwidth tuning range has been obtained with the wavelength covering from 1414 nm to 1506 nm. In most of the tuning range, the threshold current density is lower than 1.5 kA/cm2. The maximum output power of 6.5 mW was achieved under a 500 mA injection current. All achievements mentioned above were obtained under continuous-wave (CW) mode at room temperature (RT).

Key words: InAs/InP quantum dot, external-cavity laser, continuous-wave operation, metal-organic chemical vapor deposition

中图分类号:  (Quantum dots)

  • 81.07.Ta
81.16.Dn (Self-assembly) 81.05.Ea (III-V semiconductors) 78.67.Hc (Quantum dots)