中国物理B ›› 2003, Vol. 12 ›› Issue (1): 97-99.doi: 10.1088/1009-1963/12/1/318

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A method to obtain ground state electroluminescence from 1.3μm emitting InAs/GaAs quantum dots grown by molecular beam epitaxy

孔云川1, 周大勇1, 澜 清1, 刘金龙2, 苗振华3, 封松林4, 牛智川5   

  1. (1)State Key Laboratory for Superlattices and Microstructures, Institute of Semicondutors, Chinese Academy of Sciences, Beijing 100083, China; (2)State Key Laboratory for Superlattices and Microstructures, Institute of Semicondutors, Chinese Academy of Sciences, Beijing 100084, China; (3)State Key Laboratory for Superlattices and Microstructures, Institute of Semicondutors, Chinese Academy of Sciences, Beijing 100085, China; (4)State Key Laboratory for Superlattices and Microstructures, Institut
  • 收稿日期:2002-05-17 修回日期:2002-07-12 出版日期:2003-01-20 发布日期:2003-01-20
  • 基金资助:
    Project supported by the Nano Science and Technology Project of Chinese Academy of Sciences, and the National Natural Science Foundation of China (Grant Nos 60176006 and 60025410).

A method to obtain ground state electroluminescence from 1.3μm emitting InAs/GaAs quantum dots grown by molecular beam epitaxy

Kong Yun-Chuan (孔云川), Zhou Da-Yong (周大勇), Lan Qing (澜 清), Liu Jin-Long (刘金龙), Miao Zhen-Hua (苗振华), Feng Song-Lin (封松林), Niu Zhi-Chuan (牛智川)   

  1. State Key Laboratory for Superlattices and Microstructures, Institute of Semicondutors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2002-05-17 Revised:2002-07-12 Online:2003-01-20 Published:2003-01-20
  • Supported by:
    Project supported by the Nano Science and Technology Project of Chinese Academy of Sciences, and the National Natural Science Foundation of China (Grant Nos 60176006 and 60025410).

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摘要： 1.3 um emitting InAs/GaAs quantum dots (QDs) have been grown by molecular beam epitaxy and QD light emitting diodes (LEDs) have been fabricated. In the electroluminescence spectra of QD LEDs, two clear peaks corresponding to the ground state emission and the excited state emission are observed. It was found that the ground state emission could be achieved by increasing the number of QDs contained in the active region because of the state filling effect. This work demonstrates a way to control and tune the emitting wavelength of QD LEDs and lasers.

Abstract: 1.3 um emitting InAs/GaAs quantum dots (QDs) have been grown by molecular beam epitaxy and QD light emitting diodes (LEDs) have been fabricated. In the electroluminescence spectra of QD LEDs, two clear peaks corresponding to the ground state emission and the excited state emission are observed. It was found that the ground state emission could be achieved by increasing the number of QDs contained in the active region because of the state filling effect. This work demonstrates a way to control and tune the emitting wavelength of QD LEDs and lasers.

Key words: quantum dots, electroluminescence, state filling effect

中图分类号:  (Quantum dots)

  • 81.07.Ta
81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy) 85.60.Jb (Light-emitting devices) 78.67.Hc (Quantum dots) 78.60.Fi (Electroluminescence)