Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3-μ quantum dot lasers

doi:10.1088/1674-1056/28/7/078104

中国物理B ›› 2019, Vol. 28 ›› Issue (7): 78104-078104.doi: 10.1088/1674-1056/28/7/078104

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3-μ quantum dot lasers

Hui-Ming Hao(郝慧明), Xiang-Bin Su(苏向斌), Jing Zhang(张静), Hai-Qiao Ni(倪海桥), Zhi-Chuan Niu(牛智川)

1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2019-04-01 修回日期:2019-04-25 出版日期:2019-07-05 发布日期:2019-07-05
通讯作者: Hai-Qiao Ni, Zhi-Chuan Niu E-mail:zcniu@semi.ac.cn;nihq@semi.ac.cn
基金资助:
Project supported by the National Key Technology Research and Development Program of China (Grant No. 2018YFA0306101), the National Natural Science Foundation of China (Grant No. 61505196), the Scientific Instrument Developing Project of the Chinese Academy of Sciences (Grant No. YJKYYQ20170032), and the Guangdong Science and Technology Project, China (Grant No. 20180329).

Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3-μ quantum dot lasers

Hui-Ming Hao(郝慧明)^1,2, Xiang-Bin Su(苏向斌)^1,2, Jing Zhang(张静)¹, Hai-Qiao Ni(倪海桥)^1,2, Zhi-Chuan Niu(牛智川)^1,2

1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

Received:2019-04-01 Revised:2019-04-25 Online:2019-07-05 Published:2019-07-05
Contact: Hai-Qiao Ni, Zhi-Chuan Niu E-mail:zcniu@semi.ac.cn;nihq@semi.ac.cn
Supported by:
Project supported by the National Key Technology Research and Development Program of China (Grant No. 2018YFA0306101), the National Natural Science Foundation of China (Grant No. 61505196), the Scientific Instrument Developing Project of the Chinese Academy of Sciences (Grant No. YJKYYQ20170032), and the Guangdong Science and Technology Project, China (Grant No. 20180329).

摘要/Abstract

摘要：

Systematic investigation of InAs quantum dot (QD) growth using molecular beam epitaxy has been carried out, focusing mainly on the InAs growth rate and its effects on the quality of the InAs/GaAs quantum dots. By optimizing the growth rate, high quality InAs/GaAs quantum dots have been achieved. The areal quantum dot density is 5.9×10¹⁰ cm^-2, almost double the conventional density (3.0×10¹⁰ cm^-2). Meanwhile, the linewidth is reduced to 29 meV at room temperature without changing the areal dot density. These improved QDs are of great significance for fabricating high performance quantum dot lasers on various substrates.

关键词: quantum dots, growth rate, dot density, linewidth

Abstract:

Key words: quantum dots, growth rate, dot density, linewidth

中图分类号: (III-V semiconductors)

81.05.Ea

81.07.Ta (Quantum dots) 81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy) 81.70.-q (Methods of materials testing and analysis)

郝慧明, 苏向斌, 张静, 倪海桥, 牛智川. Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3-μ quantum dot lasers[J]. 中国物理B, 2019, 28(7): 78104-078104.

Hui-Ming Hao(郝慧明), Xiang-Bin Su(苏向斌), Jing Zhang(张静), Hai-Qiao Ni(倪海桥), Zhi-Chuan Niu(牛智川). Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3-μ quantum dot lasers[J]. Chin. Phys. B, 2019, 28(7): 78104-078104.

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Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3-μ quantum dot lasers

Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3-μ quantum dot lasers

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