中国物理B ›› 2021, Vol. 30 ›› Issue (9): 96803-096803.doi: 10.1088/1674-1056/ac032b
Jing-Cheng Wang(王旌丞)1, Hao Chen(陈浩)1, Lin-Feng Wan(万琳丰)1, Cao-Yuan Mu(牟草源)1, Yao-Feng Liu(刘尧峰)1, Shao-Heng Cheng(成绍恒)1,2,†, Qi-Liang Wang(王启亮)1,2,‡, Liu-An Li(李柳暗)1, and Hong-Dong Li(李红东)1,2,§
Jing-Cheng Wang(王旌丞)1, Hao Chen(陈浩)1, Lin-Feng Wan(万琳丰)1, Cao-Yuan Mu(牟草源)1, Yao-Feng Liu(刘尧峰)1, Shao-Heng Cheng(成绍恒)1,2,†, Qi-Liang Wang(王启亮)1,2,‡, Liu-An Li(李柳暗)1, and Hong-Dong Li(李红东)1,2,§
摘要: Hill-like polycrystalline diamond grains (HPDGs) randomly emerged on a heavy boron-doped p+ single-crystal diamond (SCD) film by prolonging the growth duration of the chemical vapor deposition process. The Raman spectral results confirm that a relatively higher boron concentration (~ 1.1×1021 cm-3) is detected on the HPDG with respect to the SCD region (~ 5.4×1020 cm-3). It demonstrates that the Au/SCD interface can be modulated from ohmic to Schottky contact by varying the surface from hydrogen to oxygen termination. The current-voltage curve between two HPDGs is nearly linear with either oxygen or hydrogen termination, which means that the HPDGs provide a leakage path to form an ohmic contact. There are obvious rectification characteristics between oxygen-terminated HPDGs and SCD based on the difference in boron doping levels in those regions. The results reveal that the highly boron-doped HPDGs grown in SCD can be adopted as ohmic electrodes for Hall measurement and electronic devices.
中图分类号: (Semiconductor surfaces)