中国物理B ›› 2015, Vol. 24 ›› Issue (10): 107307-107307.doi: 10.1088/1674-1056/24/10/107307
王拴虎a, 张勖a, 邹吕宽a, 赵靓a, 王文鑫a b, 孙继荣a
Wang Shuan-Hu (王拴虎)a, Zhang Xu (张勖)a, Zou Lv-Kuan (邹吕宽)a, Zhao Jing (赵靓)a, Wang Wen-Xin (王文鑫)a b, Sun Ji-Rong (孙继荣)a
摘要:
Lateral resistance of silicon-based p-type and n-type Schottky junctions is investigated. After one electrode on a metallic film is irradiated, the differential lateral resistance of the system is dependent on the direction of the bias current: it keeps constant in one direction and decreases in the opposite direction. By systematically investigating the electrical potential changes in silicon and the junction, we propose a new mechanism based on light-controlled leak current. Our work provides an insight into the nature of this phenomenon and will facilitate the advanced design of switchable devices.
中图分类号: (Metal-semiconductor-metal structures)