中国物理B ›› 2015, Vol. 24 ›› Issue (10): 107307-107307.doi: 10.1088/1674-1056/24/10/107307

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Lateral resistance reduction induced by light-controlled leak current in silicon-based Schottky junction

王拴虎a, 张勖a, 邹吕宽a, 赵靓a, 王文鑫a b, 孙继荣a   

  1. a Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    b State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
  • 收稿日期:2015-03-19 修回日期:2015-04-27 出版日期:2015-10-05 发布日期:2015-10-05
  • 基金资助:

    Project supported by the National Basic Research Program of China (Grant No. 2011CB921801) and the National Natural Science Foundation of China (Grant No. 111374348).

Lateral resistance reduction induced by light-controlled leak current in silicon-based Schottky junction

Wang Shuan-Hu (王拴虎)a, Zhang Xu (张勖)a, Zou Lv-Kuan (邹吕宽)a, Zhao Jing (赵靓)a, Wang Wen-Xin (王文鑫)a b, Sun Ji-Rong (孙继荣)a   

  1. a Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    b State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
  • Received:2015-03-19 Revised:2015-04-27 Online:2015-10-05 Published:2015-10-05
  • Contact: Wang Shuan-Hu E-mail:wshtzg@126.com
  • Supported by:

    Project supported by the National Basic Research Program of China (Grant No. 2011CB921801) and the National Natural Science Foundation of China (Grant No. 111374348).

摘要:

Lateral resistance of silicon-based p-type and n-type Schottky junctions is investigated. After one electrode on a metallic film is irradiated, the differential lateral resistance of the system is dependent on the direction of the bias current: it keeps constant in one direction and decreases in the opposite direction. By systematically investigating the electrical potential changes in silicon and the junction, we propose a new mechanism based on light-controlled leak current. Our work provides an insight into the nature of this phenomenon and will facilitate the advanced design of switchable devices.

关键词: resistance reduction, Schottky junction, photovoltaic effect

Abstract:

Lateral resistance of silicon-based p-type and n-type Schottky junctions is investigated. After one electrode on a metallic film is irradiated, the differential lateral resistance of the system is dependent on the direction of the bias current: it keeps constant in one direction and decreases in the opposite direction. By systematically investigating the electrical potential changes in silicon and the junction, we propose a new mechanism based on light-controlled leak current. Our work provides an insight into the nature of this phenomenon and will facilitate the advanced design of switchable devices.

Key words: resistance reduction, Schottky junction, photovoltaic effect

中图分类号:  (Metal-semiconductor-metal structures)

  • 73.40.Sx
73.50.Pz (Photoconduction and photovoltaic effects) 74.25.F- (Transport properties)