中国物理B ›› 2015, Vol. 24 ›› Issue (10): 107302-107302.doi: 10.1088/1674-1056/24/10/107302
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
胡佐富, 吴怀昊, 吕燕伍, 张希清
Hu Zuo-Fu (胡佐富), Wu Huai-Hao (吴怀昊), Lv Yan-Wu (吕燕伍), Zhang Xi-Qing (张希清)
摘要: In this paper, we report a Schottky ultraviolet photodetector based on poly (3,4-ethylenedioxy-thiophene) poly(styrenesulfonate) (PEDOT:PSS) transparent electrode contacts to Mg0.1Zn0.9O. The I-V characteristic curves of the device are measured in the dark condition and under the illumination of a 340-nm UV light. The device shows a typical rectifying behavior with a current rectification ratio of 103 at ± 2 V, which exhibits a good Schottky behavior. The photo-to-dark current ratio is high, which is 1× 103 at -4 V. A peak response of 0.156 A/W at 340 nm is observed. The device also exhibits a wide response from 250 nm to 340 nm, with a response larger than 0.1 A/W. It covers the UV-B region (280 nm-320 nm), which makes the device very suitable for the detection of UV-B light.
中图分类号: (Surface double layers, Schottky barriers, and work functions)