中国物理B ›› 2015, Vol. 24 ›› Issue (10): 107302-107302.doi: 10.1088/1674-1056/24/10/107302

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

High response Schottky ultraviolet photodetector formed by PEDOT:PSS transparent electrode contacts to Mg0.1Zn0.9O

胡佐富, 吴怀昊, 吕燕伍, 张希清   

  1. Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China
  • 收稿日期:2015-02-15 修回日期:2015-05-06 出版日期:2015-10-05 发布日期:2015-10-05
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 50972007), the National Basic Research Program of China (Grant No. 2011CB932703), the National Natural Science Foundation for Distinguished Young Scholars of China (Grant No. 60825407), and the Opened Fund of the State Key Laboratory on Integrated Optoelectronics.

High response Schottky ultraviolet photodetector formed by PEDOT:PSS transparent electrode contacts to Mg0.1Zn0.9O

Hu Zuo-Fu (胡佐富), Wu Huai-Hao (吴怀昊), Lv Yan-Wu (吕燕伍), Zhang Xi-Qing (张希清)   

  1. Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China
  • Received:2015-02-15 Revised:2015-05-06 Online:2015-10-05 Published:2015-10-05
  • Contact: Zhang Xi-Qing E-mail:xqzhang@bjtu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 50972007), the National Basic Research Program of China (Grant No. 2011CB932703), the National Natural Science Foundation for Distinguished Young Scholars of China (Grant No. 60825407), and the Opened Fund of the State Key Laboratory on Integrated Optoelectronics.

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摘要： In this paper, we report a Schottky ultraviolet photodetector based on poly (3,4-ethylenedioxy-thiophene) poly(styrenesulfonate) (PEDOT:PSS) transparent electrode contacts to Mg0.1Zn0.9O. The I-V characteristic curves of the device are measured in the dark condition and under the illumination of a 340-nm UV light. The device shows a typical rectifying behavior with a current rectification ratio of 103 at ± 2 V, which exhibits a good Schottky behavior. The photo-to-dark current ratio is high, which is 1× 103 at -4 V. A peak response of 0.156 A/W at 340 nm is observed. The device also exhibits a wide response from 250 nm to 340 nm, with a response larger than 0.1 A/W. It covers the UV-B region (280 nm-320 nm), which makes the device very suitable for the detection of UV-B light.

关键词: Schottky junction, ultraviolet photodetector, MgZnO, PEDOT:PSS

Abstract: In this paper, we report a Schottky ultraviolet photodetector based on poly (3,4-ethylenedioxy-thiophene) poly(styrenesulfonate) (PEDOT:PSS) transparent electrode contacts to Mg0.1Zn0.9O. The I-V characteristic curves of the device are measured in the dark condition and under the illumination of a 340-nm UV light. The device shows a typical rectifying behavior with a current rectification ratio of 103 at ± 2 V, which exhibits a good Schottky behavior. The photo-to-dark current ratio is high, which is 1× 103 at -4 V. A peak response of 0.156 A/W at 340 nm is observed. The device also exhibits a wide response from 250 nm to 340 nm, with a response larger than 0.1 A/W. It covers the UV-B region (280 nm-320 nm), which makes the device very suitable for the detection of UV-B light.

Key words: Schottky junction, ultraviolet photodetector, MgZnO, PEDOT:PSS

中图分类号:  (Surface double layers, Schottky barriers, and work functions)

  • 73.30.+y
73.61.Ga (II-VI semiconductors) 73.61.Ph (Polymers; organic compounds)