Ferroelectric effect and equivalent polarization charge model of PbZr0.2Ti0.8O3 on AlGaN/GaN MIS-HEMT

doi:10.1088/1674-1056/abd469

中国物理B ›› 2021, Vol. 30 ›› Issue (5): 57302-057302.doi: 10.1088/1674-1056/abd469

Ferroelectric effect and equivalent polarization charge model of PbZr_0.2Ti_0.8O₃ on AlGaN/GaN MIS-HEMT

Yao-Peng Zhao(赵垚澎), Chong Wang(王冲)^†, Xue-Feng Zheng(郑雪峰)^‡, Xiao-Hua Ma(马晓华), Ang Li(李昂), Kai Liu(刘凯), Yun-Long He(何云龙), Xiao-Li Lu(陆小力) and Yue Hao(郝跃)

Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2020-11-11 修回日期:2020-12-10 接受日期:2020-12-17 出版日期:2021-05-14 发布日期:2021-05-14
通讯作者: Chong Wang, Xue-Feng Zheng E-mail:chongw@xidian.edu.cn;xfzheng@mail.xidian.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61974111, 62004150, and 61974115), the China Postdoctoral Science Foundation (Grant No. 2018M643575), and the Civil Aerospace Pre-Research Plan of China (Grant No. B0202).

Ferroelectric effect and equivalent polarization charge model of PbZr_0.2Ti_0.8O₃ on AlGaN/GaN MIS-HEMT

Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

Received:2020-11-11 Revised:2020-12-10 Accepted:2020-12-17 Online:2021-05-14 Published:2021-05-14
Contact: Chong Wang, Xue-Feng Zheng E-mail:chongw@xidian.edu.cn;xfzheng@mail.xidian.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61974111, 62004150, and 61974115), the China Postdoctoral Science Foundation (Grant No. 2018M643575), and the Civil Aerospace Pre-Research Plan of China (Grant No. B0202).

摘要/Abstract

摘要： PbZr_0.2Ti_0.8O₃ (PZT) gate insulator with the thickness of 30 nm is grown by pulsed laser deposition (PLD) in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs). The ferroelectric effect of PZT AlGaN/GaN MIS-HEMT is demonstrated. The polarization charge in PZT varies with different gate voltages. The equivalent polarization charge model (EPCM) is proposed for calculating the polarization charge and the concentration of two-dimensional electron gas (2DEG). The threshold voltage (V_th) and output current density (I_DS) can also be obtained by the EPCM. The theoretical values are in good agreement with the experimental results and the model can provide a guide for the design of the PZT MIS-HEMT. The polarization charges of PZT can be modulated by different gate-voltage stresses and the V_th has a regulation range of 4.0 V. The polarization charge changes after the stress of gate voltage for several seconds. When the gate voltage is stable or changes at high frequency, the output characteristics and the current collapse of the device remain stable.

关键词: PZT, AlGaN/GaN, MIS-HEMT, equivalent polarization charge model (EPCM)

Abstract: PbZr_0.2Ti_0.8O₃ (PZT) gate insulator with the thickness of 30 nm is grown by pulsed laser deposition (PLD) in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs). The ferroelectric effect of PZT AlGaN/GaN MIS-HEMT is demonstrated. The polarization charge in PZT varies with different gate voltages. The equivalent polarization charge model (EPCM) is proposed for calculating the polarization charge and the concentration of two-dimensional electron gas (2DEG). The threshold voltage (V_th) and output current density (I_DS) can also be obtained by the EPCM. The theoretical values are in good agreement with the experimental results and the model can provide a guide for the design of the PZT MIS-HEMT. The polarization charges of PZT can be modulated by different gate-voltage stresses and the V_th has a regulation range of 4.0 V. The polarization charge changes after the stress of gate voltage for several seconds. When the gate voltage is stable or changes at high frequency, the output characteristics and the current collapse of the device remain stable.

Key words: PZT, AlGaN/GaN, MIS-HEMT, equivalent polarization charge model (EPCM)

中图分类号: (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

73.40.Kp

73.40.Rw (Metal-insulator-metal structures) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 73.61.Ey (III-V semiconductors)

Yao-Peng Zhao(赵垚澎), Chong Wang(王冲), Xue-Feng Zheng(郑雪峰), Xiao-Hua Ma(马晓华), Ang Li(李昂), Kai Liu(刘凯), Yun-Long He(何云龙), Xiao-Li Lu(陆小力) and Yue Hao(郝跃). Ferroelectric effect and equivalent polarization charge model of PbZr_0.2Ti_0.8O₃ on AlGaN/GaN MIS-HEMT[J]. 中国物理B, 2021, 30(5): 57302-057302.

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Ferroelectric effect and equivalent polarization charge model of PbZr_0.2Ti_0.8O₃ on AlGaN/GaN MIS-HEMT

Ferroelectric effect and equivalent polarization charge model of PbZr_0.2Ti_0.8O₃ on AlGaN/GaN MIS-HEMT

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