Trap analysis of composite 2D-3D channel in AlGaN/GaN/graded-AlGaN: Si/GaN: C multi-heterostructure at different temperatures

doi:10.1088/1674-1056/ab96a4

中国物理B ›› 2020, Vol. 29 ›› Issue (8): 87305-087305.doi: 10.1088/1674-1056/ab96a4

• SPECIAL TOPIC—Ultracold atom and its application in precision measurement • 上一篇下一篇

Trap analysis of composite 2D-3D channel in AlGaN/GaN/graded-AlGaN: Si/GaN: C multi-heterostructure at different temperatures

1 State Key Discipline Laboratory of Wide Band-gap Semiconductor Technology, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
2 School of Microelectronics, Xidian University, Xi'an 710071, China;
3 Shanghai Precision Metrology and Testing Research Institute, Shanghai 201109, China

收稿日期:2020-03-13 修回日期:2020-05-21 出版日期:2020-08-05 发布日期:2020-08-05
通讯作者: Ling Yang E-mail:yangling@xidian.edu.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB1802100), the Natural Science Foundation of Shaanxi Province, China (Grant Nos. 2020JM-191 and 2018HJCG-20), the National Natural Science Foundation of China (Grant Nos. 61904135, 61704124, and 61534007), the China Postdoctoral Science Foundation (Grant Nos. 2018M640957 and 2019M663930XB), and the Wuhu and Xidian University Special Fund for Industry-University-Research Cooperation, China (Grant No. XWYCXY-012019007).

Trap analysis of composite 2D-3D channel in AlGaN/GaN/graded-AlGaN: Si/GaN: C multi-heterostructure at different temperatures

Sheng Hu(胡晟)¹, Ling Yang(杨凌)¹, Min-Han Mi(宓珉瀚)², Bin Hou(侯斌)², Sheng Liu(刘晟)³, Meng Zhang(张濛)¹, Mei Wu(武玫)², Qing Zhu(朱青)¹, Sheng Wu(武盛)², Yang Lu(卢阳)², Jie-Jie Zhu(祝杰杰)¹, Xiao-Wei Zhou(周小伟)¹, Ling Lv(吕玲)¹, Xiao-Hua Ma(马晓华)², Yue Hao(郝跃)²

1 State Key Discipline Laboratory of Wide Band-gap Semiconductor Technology, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
2 School of Microelectronics, Xidian University, Xi'an 710071, China;
3 Shanghai Precision Metrology and Testing Research Institute, Shanghai 201109, China

Received:2020-03-13 Revised:2020-05-21 Online:2020-08-05 Published:2020-08-05
Contact: Ling Yang E-mail:yangling@xidian.edu.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB1802100), the Natural Science Foundation of Shaanxi Province, China (Grant Nos. 2020JM-191 and 2018HJCG-20), the National Natural Science Foundation of China (Grant Nos. 61904135, 61704124, and 61534007), the China Postdoctoral Science Foundation (Grant Nos. 2018M640957 and 2019M663930XB), and the Wuhu and Xidian University Special Fund for Industry-University-Research Cooperation, China (Grant No. XWYCXY-012019007).

摘要/Abstract

摘要： The graded AlGaN:Si back barrier can form the majority of three-dimensional electron gases (3DEGs) at the GaN/graded AlGaN:Si heterostructure and create a composite two-dimensional (2D)-three-dimensional (3D) channel in AlGaN/GaN/graded-AlGaN:Si/GaN:C heterostructure (DH:Si/C). Frequency-dependent capacitances and conductance are measured to investigate the characteristics of the multi-temperature trap states of in DH:Si/C and AlGaN/GaN/GaN:C heterostructure (SH:C). There are fast, medium, and slow trap states in DH:Si/C, while only medium trap states exist in SH:C. The time constant/trap density for medium trap state in SH:C heterostructure are (11 μs-17.7 μs)/(1.1×10¹³ cm^-2·eV^-1-3.9×10¹³ cm^-2·eV^-1) and (8.7 μs-14.1 μs)/(0.7×10¹³ cm^-2·eV^-1-1.9×10¹³ cm^-2·eV^-1) at 300 K and 500 K respectively. The time constant/trap density for fast, medium, and slow trap states in DH:Si/C heterostructure are (4.2 μs-7.7 μs)/(1.5×10¹³ cm^-2·eV^-1-3.2×10¹³ cm^-2·eV^-1), (6.8 μs-11.8 μs)/(0.8×10¹³ cm^-2·eV^-1-2.8×10¹³ cm^-2·eV^-1), (30.1 μs-151 μs)/(7.5×10¹² cm^-2·eV^-1-7.8×10¹² cm^-2·eV^-1) at 300 K and (3.5 μs-6.5 μs)/(0.9×10¹³ cm^-2·eV^-1-1.8×10¹³ cm^-2·eV^-1), (4.9 μs-9.4 μs)/(0.6×10¹³ cm^-2·eV^-1-1.7×10¹³ cm^-2·eV^-1), (20.6 μs-61.9 μs)/(3.2×10¹² cm^-2·eV^-1-3.5×10¹² cm^-2·eV^-1) at 500 K, respectively. The DH:Si/C structure can effectively reduce the density of medium trap states compared with SH:C structure.

关键词: AlGaN/GaN HEMT, multi-heterostructure, composite 2D-3D channel, multi-temperature trap states

Abstract: The graded AlGaN:Si back barrier can form the majority of three-dimensional electron gases (3DEGs) at the GaN/graded AlGaN:Si heterostructure and create a composite two-dimensional (2D)-three-dimensional (3D) channel in AlGaN/GaN/graded-AlGaN:Si/GaN:C heterostructure (DH:Si/C). Frequency-dependent capacitances and conductance are measured to investigate the characteristics of the multi-temperature trap states of in DH:Si/C and AlGaN/GaN/GaN:C heterostructure (SH:C). There are fast, medium, and slow trap states in DH:Si/C, while only medium trap states exist in SH:C. The time constant/trap density for medium trap state in SH:C heterostructure are (11 μs-17.7 μs)/(1.1×10¹³ cm^-2·eV^-1-3.9×10¹³ cm^-2·eV^-1) and (8.7 μs-14.1 μs)/(0.7×10¹³ cm^-2·eV^-1-1.9×10¹³ cm^-2·eV^-1) at 300 K and 500 K respectively. The time constant/trap density for fast, medium, and slow trap states in DH:Si/C heterostructure are (4.2 μs-7.7 μs)/(1.5×10¹³ cm^-2·eV^-1-3.2×10¹³ cm^-2·eV^-1), (6.8 μs-11.8 μs)/(0.8×10¹³ cm^-2·eV^-1-2.8×10¹³ cm^-2·eV^-1), (30.1 μs-151 μs)/(7.5×10¹² cm^-2·eV^-1-7.8×10¹² cm^-2·eV^-1) at 300 K and (3.5 μs-6.5 μs)/(0.9×10¹³ cm^-2·eV^-1-1.8×10¹³ cm^-2·eV^-1), (4.9 μs-9.4 μs)/(0.6×10¹³ cm^-2·eV^-1-1.7×10¹³ cm^-2·eV^-1), (20.6 μs-61.9 μs)/(3.2×10¹² cm^-2·eV^-1-3.5×10¹² cm^-2·eV^-1) at 500 K, respectively. The DH:Si/C structure can effectively reduce the density of medium trap states compared with SH:C structure.

Key words: AlGaN/GaN HEMT, multi-heterostructure, composite 2D-3D channel, multi-temperature trap states

中图分类号: (III-V semiconductors)

73.61.Ey

85.30.Tv (Field effect devices) 85.30.De (Semiconductor-device characterization, design, and modeling)

胡晟, 杨凌, 宓珉瀚, 侯斌, 刘晟, 张濛, 武玫, 朱青, 武盛, 卢阳, 祝杰杰, 周小伟, 吕玲, 马晓华, 郝跃. Trap analysis of composite 2D-3D channel in AlGaN/GaN/graded-AlGaN: Si/GaN: C multi-heterostructure at different temperatures[J]. 中国物理B, 2020, 29(8): 87305-087305.

Sheng Hu(胡晟), Ling Yang(杨凌), Min-Han Mi(宓珉瀚), Bin Hou(侯斌), Sheng Liu(刘晟), Meng Zhang(张濛), Mei Wu(武玫), Qing Zhu(朱青), Sheng Wu(武盛), Yang Lu(卢阳), Jie-Jie Zhu(祝杰杰), Xiao-Wei Zhou(周小伟), Ling Lv(吕玲), Xiao-Hua Ma(马晓华), Yue Hao(郝跃). Trap analysis of composite 2D-3D channel in AlGaN/GaN/graded-AlGaN: Si/GaN: C multi-heterostructure at different temperatures[J]. Chin. Phys. B, 2020, 29(8): 87305-087305.

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Trap analysis of composite 2D-3D channel in AlGaN/GaN/graded-AlGaN: Si/GaN: C multi-heterostructure at different temperatures

Trap analysis of composite 2D-3D channel in AlGaN/GaN/graded-AlGaN: Si/GaN: C multi-heterostructure at different temperatures

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