Comparative study on characteristics of Si-based AlGaN/GaN recessed MIS-HEMTs with HfO2 and Al2O3 gate insulators

doi:10.1088/1674-1056/ab8daa

中国物理B ›› 2020, Vol. 29 ›› Issue (8): 87304-087304.doi: 10.1088/1674-1056/ab8daa

• SPECIAL TOPIC—Ultracold atom and its application in precision measurement • 上一篇下一篇

Comparative study on characteristics of Si-based AlGaN/GaN recessed MIS-HEMTs with HfO₂ and Al₂O₃ gate insulators

Yao-Peng Zhao(赵垚澎), Chong Wang(王冲), Xue-Feng Zheng(郑雪峰), Xiao-Hua Ma(马晓华), Kai Liu(刘凯), Ang Li(李昂), Yun-Long He(何云龙), Yue Hao(郝跃)

Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2020-03-18 修回日期:2020-04-24 出版日期:2020-08-05 发布日期:2020-08-05
通讯作者: Chong Wang, Chong Wang E-mail:chongw@xidian.edu.cn;xfzheng@mail.xidian.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61974111, 11690042, and 61974115), the National Pre-research Foundation of China (Grant No. 31512050402), and the Fund of Innovation Center of Radiation Application, China (Grant No. KFZC2018040202).

Comparative study on characteristics of Si-based AlGaN/GaN recessed MIS-HEMTs with HfO₂ and Al₂O₃ gate insulators

Yao-Peng Zhao(赵垚澎), Chong Wang(王冲), Xue-Feng Zheng(郑雪峰), Xiao-Hua Ma(马晓华), Kai Liu(刘凯), Ang Li(李昂), Yun-Long He(何云龙), Yue Hao(郝跃)

Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

Received:2020-03-18 Revised:2020-04-24 Online:2020-08-05 Published:2020-08-05
Contact: Chong Wang, Chong Wang E-mail:chongw@xidian.edu.cn;xfzheng@mail.xidian.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61974111, 11690042, and 61974115), the National Pre-research Foundation of China (Grant No. 31512050402), and the Fund of Innovation Center of Radiation Application, China (Grant No. KFZC2018040202).

摘要/Abstract

摘要： Two types of enhancement-mode (E-mode) AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with different gate insulators are fabricated on Si substrates. The HfO₂ gate insulator and the Al₂O₃ gate insulator each with a thickness of 30 nm are grown by the plasma-enhanced atomic layer deposition (PEALD). The energy band diagrams of two types of dielectric MIS-HEMTs are compared. The breakdown voltage (V_BR) of HfO₂ dielectric layer and Al₂O₃ dielectric layer are 9.4 V and 15.9 V, respectively. With the same barrier thickness, the transconductance of MIS-HEMT with HfO₂ is larger. The threshold voltage (Vth) of the HfO₂ and Al₂O₃ MIS-HEMT are 2.0 V and 2.4 V, respectively, when the barrier layer thickness is 0 nm. The C-V characteristics are in good agreement with the Vth's transfer characteristics. As the barrier layer becomes thinner, the drain current density decreases sharply. Due to the dielectric/AlGaN interface is very close to the channel, the scattering of interface states will lead the electron mobility to decrease. The current collapse and the R_on of Al₂O₃ MIS-HEMT are smaller at the maximum gate voltage. As Al₂O₃ has excellent thermal stability and chemical stability, the interface state density of Al₂O₃/AlGaN is less than that of HfO₂/AlGaN.

关键词: AlGaN/GaN, enhancement-mode, MIS-HEMT, HfO₂, Al₂O₃

Abstract: Two types of enhancement-mode (E-mode) AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with different gate insulators are fabricated on Si substrates. The HfO₂ gate insulator and the Al₂O₃ gate insulator each with a thickness of 30 nm are grown by the plasma-enhanced atomic layer deposition (PEALD). The energy band diagrams of two types of dielectric MIS-HEMTs are compared. The breakdown voltage (V_BR) of HfO₂ dielectric layer and Al₂O₃ dielectric layer are 9.4 V and 15.9 V, respectively. With the same barrier thickness, the transconductance of MIS-HEMT with HfO₂ is larger. The threshold voltage (Vth) of the HfO₂ and Al₂O₃ MIS-HEMT are 2.0 V and 2.4 V, respectively, when the barrier layer thickness is 0 nm. The C-V characteristics are in good agreement with the Vth's transfer characteristics. As the barrier layer becomes thinner, the drain current density decreases sharply. Due to the dielectric/AlGaN interface is very close to the channel, the scattering of interface states will lead the electron mobility to decrease. The current collapse and the R_on of Al₂O₃ MIS-HEMT are smaller at the maximum gate voltage. As Al₂O₃ has excellent thermal stability and chemical stability, the interface state density of Al₂O₃/AlGaN is less than that of HfO₂/AlGaN.

Key words: AlGaN/GaN, enhancement-mode, MIS-HEMT, HfO₂, Al₂O₃

中图分类号: (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

73.40.Kp

73.40.Rw (Metal-insulator-metal structures) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 73.61.Ey (III-V semiconductors)

赵垚澎, 王冲, 郑雪峰, 马晓华, 刘凯, 李昂, 何云龙, 郝跃. Comparative study on characteristics of Si-based AlGaN/GaN recessed MIS-HEMTs with HfO₂ and Al₂O₃ gate insulators[J]. 中国物理B, 2020, 29(8): 87304-087304.

Yao-Peng Zhao(赵垚澎), Chong Wang(王冲), Xue-Feng Zheng(郑雪峰), Xiao-Hua Ma(马晓华), Kai Liu(刘凯), Ang Li(李昂), Yun-Long He(何云龙), Yue Hao(郝跃). Comparative study on characteristics of Si-based AlGaN/GaN recessed MIS-HEMTs with HfO₂ and Al₂O₃ gate insulators[J]. Chin. Phys. B, 2020, 29(8): 87304-087304.

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Comparative study on characteristics of Si-based AlGaN/GaN recessed MIS-HEMTs with HfO₂ and Al₂O₃ gate insulators

Comparative study on characteristics of Si-based AlGaN/GaN recessed MIS-HEMTs with HfO₂ and Al₂O₃ gate insulators

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