High-responsivity solar-blind photodetector based on MOCVD-grown Si-doped β-Ga2O3 thin film

doi:10.1088/1674-1056/abe37a

中国物理B ›› 2021, Vol. 30 ›› Issue (5): 57301-057301.doi: 10.1088/1674-1056/abe37a

High-responsivity solar-blind photodetector based on MOCVD-grown Si-doped β-Ga₂O₃ thin film

Yu-Song Zhi(支钰崧)¹, Wei-Yu Jiang(江为宇)¹, Zeng Liu(刘增)^1,5, Yuan-Yuan Liu(刘媛媛)^2,3, Xu-Long Chu(褚旭龙)^1,4, Jia-Hang Liu(刘佳航)¹, Shan Li(李山)¹, Zu-Yong Yan(晏祖勇)¹, Yue-Hui Wang(王月晖)¹, Pei-Gang Li(李培刚)^1,†, Zhen-Ping Wu(吴真平)¹, and Wei-Hua Tang(唐为华)^1,5,‡

1 Laboratory of Information Functional Materials and Devices, School of Science & State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 The Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
4 China Aerospace System Simulation Technology Co., Ltd. (Beijing), Beijing 100195, China;
5 College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210023, China

收稿日期:2020-12-09 修回日期:2021-01-22 接受日期:2021-02-05 出版日期:2021-05-14 发布日期:2021-05-14
通讯作者: Pei-Gang Li, Wei-Hua Tang E-mail:pgli@bupt.edu.cn;whtang@bupt.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61774019 and 51572033), the Fund of State Key Laboratory of Information Photonics and Optical Communications (BUPT), and the Fundamental Research Funds for the Central Universities, China.

High-responsivity solar-blind photodetector based on MOCVD-grown Si-doped β-Ga₂O₃ thin film

1 Laboratory of Information Functional Materials and Devices, School of Science & State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 The Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
4 China Aerospace System Simulation Technology Co., Ltd. (Beijing), Beijing 100195, China;
5 College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210023, China

Received:2020-12-09 Revised:2021-01-22 Accepted:2021-02-05 Online:2021-05-14 Published:2021-05-14
Contact: Pei-Gang Li, Wei-Hua Tang E-mail:pgli@bupt.edu.cn;whtang@bupt.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61774019 and 51572033), the Fund of State Key Laboratory of Information Photonics and Optical Communications (BUPT), and the Fundamental Research Funds for the Central Universities, China.

摘要/Abstract

摘要： Si-doped β-Ga₂O₃ films are fabricated through metal-organic chemical vapor deposition (MOCVD). Solar-blind ultraviolet (UV) photodetector (PD) based on the films is fabricated by standard photolithography, and the photodetection properties are investigated. The results show that the photocurrent increases to 11.2 mA under 200 μW·cm^-2 254 nm illumination and ±20 V bias, leading to photo-responsivity as high as 788 A·W^-1. The Si-doped β-Ga₂O₃-based PD is promised to perform solar-blind photodetection with high performance.

关键词: Si-doped β-Ga₂O₃, metal-organic chemical vapor deposition (MOCVD), solar-blind, high responsivity

Abstract: Si-doped β-Ga₂O₃ films are fabricated through metal-organic chemical vapor deposition (MOCVD). Solar-blind ultraviolet (UV) photodetector (PD) based on the films is fabricated by standard photolithography, and the photodetection properties are investigated. The results show that the photocurrent increases to 11.2 mA under 200 μW·cm^-2 254 nm illumination and ±20 V bias, leading to photo-responsivity as high as 788 A·W^-1. The Si-doped β-Ga₂O₃-based PD is promised to perform solar-blind photodetection with high performance.

Key words: Si-doped β-Ga₂O₃, metal-organic chemical vapor deposition (MOCVD), solar-blind, high responsivity

中图分类号: (Surface double layers, Schottky barriers, and work functions)

73.30.+y

85.25.Oj (Superconducting optical, X-ray, and γ-ray detectors (SIS, NIS, transition edge)) 85.60.Dw (Photodiodes; phototransistors; photoresistors)

Yu-Song Zhi(支钰崧), Wei-Yu Jiang(江为宇), Zeng Liu(刘增), Yuan-Yuan Liu(刘媛媛), Xu-Long Chu(褚旭龙), Jia-Hang Liu(刘佳航), Shan Li(李山), Zu-Yong Yan(晏祖勇), Yue-Hui Wang(王月晖), Pei-Gang Li(李培刚), Zhen-Ping Wu(吴真平), and Wei-Hua Tang(唐为华). High-responsivity solar-blind photodetector based on MOCVD-grown Si-doped β-Ga₂O₃ thin film[J]. 中国物理B, 2021, 30(5): 57301-057301.

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High-responsivity solar-blind photodetector based on MOCVD-grown Si-doped β-Ga₂O₃ thin film

High-responsivity solar-blind photodetector based on MOCVD-grown Si-doped β-Ga₂O₃ thin film

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