Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor

doi:10.1088/1674-1056/27/10/108501

中国物理B ›› 2018, Vol. 27 ›› Issue (10): 108501-108501.doi: 10.1088/1674-1056/27/10/108501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor

Jin-Xin Zhang(张晋新), Hong-Xia Guo(郭红霞), Xiao-Yu Pan(潘霄宇), Qi Guo(郭旗), Feng-Qi Zhang(张凤祁), Juan Feng(冯娟), Xin Wang(王信), Yin Wei(魏莹), Xian-Xiang Wu(吴宪祥)

1 Xidian University, Xi'an 710126, China;
2 Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;
3 Northwest Institution of Nuclear Technology, Xi'an 710024, China

收稿日期:2018-05-07 修回日期:2018-07-09 出版日期:2018-10-05 发布日期:2018-10-05
通讯作者: Juan Feng E-mail:fengj@xidian.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61704127 and 61574171) and the Fundamental Research Funds for the Central Universities, China (Grant No. XJS17067).

Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor

Jin-Xin Zhang(张晋新)¹, Hong-Xia Guo(郭红霞)^2,3, Xiao-Yu Pan(潘霄宇)³, Qi Guo(郭旗)², Feng-Qi Zhang(张凤祁)³, Juan Feng(冯娟)¹, Xin Wang(王信)², Yin Wei(魏莹)², Xian-Xiang Wu(吴宪祥)¹

1 Xidian University, Xi'an 710126, China;
2 Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;
3 Northwest Institution of Nuclear Technology, Xi'an 710024, China

Received:2018-05-07 Revised:2018-07-09 Online:2018-10-05 Published:2018-10-05
Contact: Juan Feng E-mail:fengj@xidian.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61704127 and 61574171) and the Fundamental Research Funds for the Central Universities, China (Grant No. XJS17067).

摘要/Abstract

摘要：

The synergistic effect of total ionizing dose (TID) on single event effect (SEE) in SiGe heterojunction bipolar transistor (HBT) is investigated in a series of experiments. The SiGe HBTs after being exposed to ⁶⁰Co γ irradiation are struck by pulsed laser to simulate SEE. The SEE transient currents and collected charges of the un-irradiated device are compared with those of the devices which are irradiated at high and low dose rate with various biases. The results show that the SEE damage to un-irradiated device is more serious than that to irradiated SiGe HBT at a low applied voltage of laser test. In addition, the γ irradiations at forward and all-grounded bias have an obvious influence on SEE in the SiGe HBT, but the synergistic effect after cutting off the γ irradiation is not significant. The influence of positive oxide-trap charges induced by TID on the distortion of electric field in SEE is the major factor of the synergistic effect. Moreover, the recombination of interface traps also plays a role in charge collection.

关键词: SiGe HBT, synergistic effect, single event effects, total ionizing dose

Abstract:

Key words: SiGe HBT, synergistic effect, single event effects, total ionizing dose

中图分类号: (Bipolar transistors)

85.30.Pq

61.80.Az (Theory and models of radiation effects) 73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 75.40.Mg (Numerical simulation studies)

张晋新, 郭红霞, 潘霄宇, 郭旗, 张凤祁, 冯娟, 王信, 魏莹, 吴宪祥. Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor[J]. 中国物理B, 2018, 27(10): 108501-108501.

Jin-Xin Zhang(张晋新), Hong-Xia Guo(郭红霞), Xiao-Yu Pan(潘霄宇), Qi Guo(郭旗), Feng-Qi Zhang(张凤祁), Juan Feng(冯娟), Xin Wang(王信), Yin Wei(魏莹), Xian-Xiang Wu(吴宪祥). Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor[J]. Chin. Phys. B, 2018, 27(10): 108501-108501.

参考文献 22

[1]	Lourenco N E, Fleetwood Z E, Ildefonso A, Wachter M T, Roche N J H, KhachatrianA, McMorrow D, Buchner S P, Warner J H, Itsuji H, Kobayashi D, Hirose K, PakiP, Raman A and Cressler J D 2017 IEEE Trans. Nucl. Sci. 64 406 doi: 10.1109/TNS.2016.2633997
[2]	Ildefonso A, Lourenco N E, Fleetwood Z E, Wachter M T, Tzintzarov G N, Cardoso A S, Roche N J H, Khachatrian A, McMorrow D, Buchner S P, Warner J H, Paki P, Kaynak M, Tillack B and Cressler J D 2017 IEEE Trans. Nucl. Sci. 64 89 doi: 10.1109/TNS.2016.2619582
[3]	Song I, Raghunathan U S, Lourenco N E, Fleetwood Z E, Oakley M A, Jung S, Cho M K, Roche N J H, Khachatrian A, Warner J H, Buchner S P, McMorrow D, Paki P and Cressler J D 2016 IEEE Trans. Nucl. Sci. 63 1099 doi: 10.1109/TNS.2016.2518400
[4]	Appaswamy A 2010 "Operation of inverse mode SiGe HBTs and ultra-scaled CMOS devices in extreme environments", Ph. D. Dissertation (Georgia:Georgia Institute of Technology)
[5]	Praveen K C, Pushpa N, Rao Y P P, Govindaraj G, Cressler J D and Prakash A P G 2010 Solid-State Electron. 54 1554 doi: 10.1016/j.sse.2010.08.003
[6]	Bellini M 2009 "Operation of Silicon-Germanium heterojunction bipolar transistors on silicon-on insulator in extreme environments", Ph. D. Dissertation (Georgia:Georgia Institute of Technology)
[7]	Varadharajaperumal M 2010 "3D simulation of SEU in SiGe HBTS and radiation hardening by design", Master Thesis (Alabama:Auburn University)
[8]	Varadharajaperumal M, Niu G, Wei X, Zhang T, Cressler J D, Reed R and Marshall P W 2007 IEEE Tran. Nucl. Sci. 54 2330 doi: 10.1109/TNS.2007.910290
[9]	Li P, Guo H X, Guo Q, Zhang J X and Wei Y 2015 Chin. Phys. Lett. 32 088505 doi: 10.1088/0256-307X/32/8/088505
[10]	Zhang J X, Guo Q, Guo H X, Lu W, He C H, Wang X, Li P and Liu M H 2016 IEEE Trans. Nucl. Sci. 63 1251 doi: 10.1109/TNS.2016.2522158
[11]	Zhang J X, Guo Q, Guo H X, Lu W, He C H, Wang X, Li P and Wen L 2018 Microelectronics Reliability 84 105 doi: 10.1016/j.microrel.2018.03.007
[12]	Zhang B, Yang Y T, Li Y J and Xu X B 2012 Acta Phys. Sin. 61 238502 (in Chinese)
[13]	Shu B, Zhang H M, Hu H Y, Xuan R X and Dai X Y 2007 Acta Phys. Sin. 56 1105 (in Chinese)
[14]	PellishJ A 2008 "Bulk Silicon-Germanium Heterojunction Bipolar Transistor Process Feature Implications for Single-Event Effects Analysis and Charge Collection Mechanisms", Ph. D. Dissertation (Tennessee:Vanderbilt University)
[15]	Li P, Guo H X, Guo Q, Zhang J X, Xiao Y, Wei Y, Cui J W, Wen L, LiuM H and Wang X 2015 Chin. Phys. B 24 088502 doi: 10.1088/1674-1056/24/8/088502
[16]	Zhang J X, Guo H X, He C H, Tang D, Xiong C, Li P, Wang X 2014 Acta Phys. Sin. 63 248503 (in Chinese)
[17]	Cressler J D 2003 IEEE Nucl. Space Radiat. Eff. Conf. Short Course Note Book Section V pp. 3-6
[18]	Banerjee G, Niu G, Cressler J D, Clark S D, Palmer M J and Ahlgren D C 1999 IEEE Trans. Nucl. Sci. 46 1620 doi: 10.1109/23.819130
[19]	Fleetwood F D 2013 IEEE Trans. Nucl. Sci. 60 1706 doi: 10.1109/TNS.2013.2259260
[20]	Chen M, Zhang Z X, Wei X, Bi D W, Zou S C and Wang X 2012 Nucl. Instrum. Method Phys. Res. B 272 266 doi: 10.1016/j.nimb.2011.01.080
[21]	Boch J, Saigne F, Touboul A D, Ducret J F C and Bernard M 2006 Appl. Phys. Lett. 88 232113 doi: 10.1063/1.2210293
[22]	UllánM, Wilder M, Spieler H, Spencer E, Rescia S, Newcomer F M, Martinez-McKinney F, Kononenko W, Grillo A A and Díez S 2013 Nucl. Instrum. Method Phys. Res. A 724 41 doi: 10.1016/j.nima.2013.04.088

Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor

Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 22

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Guangbao Lu(陆广宝), Jun Liu(刘俊), Chuanguo Zhang(张传国), Yang Gao(高扬), and Yonggang Li(李永钢). Dynamic modeling of total ionizing dose-induced threshold voltage shifts in MOS devices[J]. 中国物理B, 2023, 32(1): 18506-018506.
[2]	Yuan-Ting Huang(黄垣婷), Xiu-Hai Cui(崔秀海), Jian-Qun Yang(杨剑群), Tao Ying(应涛), Xue-Qiang Yu(余雪强), Lei Dong(董磊), Wei-Qi Li(李伟奇), and Xing-Ji Li(李兴冀). Radiation effects of 50-MeV protons on PNP bipolar junction transistors[J]. 中国物理B, 2022, 31(2): 28502-028502.
[3]	Guohua Cao(曹国华), Zhifei Wei(魏志飞), Yuehong Yin(殷月红), Lige Fu(付丽歌), Yukun Liu(刘玉坤), Shengli Qiu(邱胜利), and Baoqing Zhang(张宝庆). Influence of sulfur doping on the molecular fluorophore and synergistic effect for citric acid carbon dots[J]. 中国物理B, 2021, 30(9): 97802-097802.
[4]	Haocheng Liu(刘昊成), Jia Huang(黄嘉), Liuxuan Cao(曹留煊), Yue Su(苏悦), Zhiying Gao(高智颖), Pengfei Ma(马鹏飞), Songqin Xia(夏松钦), Wei Ge(葛伟), Qingyuan Liu(刘清元), Shuang Zhao(赵双), Yugang Wang(王宇钢), Jinchi Huang(黄金池), Zhehui Zhou(周哲辉), Pengfei Zheng(郑鹏飞), and Chenxu Wang(王晨旭). Helium-hydrogen synergistic effects on swelling in in-situ multiple-ion beams irradiated steels[J]. 中国物理B, 2021, 30(8): 86106-086106.
[5]	魏佳男, 贺朝会, 李培, 李永宏, 郭红霞. Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor[J]. 中国物理B, 2019, 28(7): 76106-076106.
[6]	付丽歌, 殷月红, 曹国华, 武苹苹, 汪舰, 闫玲玲, 张宝庆, 李明. A new sulfur-doped source and synergistic effect with nitrogen for carbon dots produced from glucose[J]. 中国物理B, 2019, 28(12): 128102-128102.
[7]	殷亚楠, 刘杰, 姬庆刚, 赵培雄, 刘天奇, 叶兵, 罗捷, 孙友梅, 侯明东. Influences of total ionizing dose on single event effect sensitivity in floating gate cells[J]. 中国物理B, 2018, 27(8): 86103-086103.
[8]	雷志锋, 张战刚, 恩云飞, 黄云. Mechanisms of atmospheric neutron-induced single event upsets in nanometric SOI and bulk SRAM devices based on experiment-verified simulation tool[J]. 中国物理B, 2018, 27(6): 66105-066105.
[9]	戴丽华, 毕大炜, 胡志远, 刘小年, 张梦映, 张正选, 邹世昌. Research on the radiation hardened SOI devices with single-step Si ion implantation[J]. 中国物理B, 2018, 27(4): 48503-048503.
[10]	翟近泽, 王腾, 王洪超, 苏文斌, 王雪, 陈婷婷, 王春雷. Strategies for optimizing the thermoelectricity of PbTe alloys[J]. 中国物理B, 2018, 27(4): 47306-047306.
[11]	解鑫, 毕大伟, 胡志远, 朱慧龙, 张梦映, 张正选, 邹世昌. Influence of characteristics' measurement sequence on total ionizing dose effect in PDSOI nMOSFET[J]. 中国物理B, 2018, 27(12): 128501-128501.
[12]	郑齐文, 崔江维, 刘梦新, 苏丹丹, 周航, 马腾, 余学峰, 陆妩, 郭旗, 赵发展. Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin[J]. 中国物理B, 2017, 26(9): 96103-096103.
[13]	崔岩, 杨玲, 高腾, 李博, 罗家俊. Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices[J]. 中国物理B, 2017, 26(8): 87501-087501.
[14]	张晋新, 贺朝会, 郭红霞, 李培, 郭宝龙, 吴宪祥. Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor[J]. 中国物理B, 2017, 26(8): 88502-088502.
[15]	樊双, 胡志远, 张正选, 宁冰旭, 毕大炜, 戴丽华, 张梦映, 张乐情. Total ionizing dose induced single transistor latchup in 130-nm PDSOI input/output NMOSFETs[J]. 中国物理B, 2017, 26(3): 36103-036103.