Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor

doi:10.1088/1674-1056/28/7/076106

中国物理B ›› 2019, Vol. 28 ›› Issue (7): 76106-076106.doi: 10.1088/1674-1056/28/7/076106

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor

Jia-Nan Wei(魏佳男), Chao-Hui He(贺朝会), Pei Li(李培), Yong-Hong Li(李永宏), Hong-Xia Guo(郭红霞)

1 School of Nuclear Science and Technology, Xi'an Jiaotong University, Xi'an 710049, China;
2 State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an 710024, China

收稿日期:2018-11-13 修回日期:2019-04-29 出版日期:2019-07-05 发布日期:2019-07-05
通讯作者: Jia-Nan Wei E-mail:weijianan93@163.com
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11775167, 61574171, 11575138, and 11835006).

Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor

Jia-Nan Wei(魏佳男)¹, Chao-Hui He(贺朝会)¹, Pei Li(李培)¹, Yong-Hong Li(李永宏)¹, Hong-Xia Guo(郭红霞)²

1 School of Nuclear Science and Technology, Xi'an Jiaotong University, Xi'an 710049, China;
2 State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an 710024, China

Received:2018-11-13 Revised:2019-04-29 Online:2019-07-05 Published:2019-07-05
Contact: Jia-Nan Wei E-mail:weijianan93@163.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11775167, 61574171, 11575138, and 11835006).

摘要/Abstract

摘要：

This paper presents an investigation into the impact of proton-induced alteration of carrier lifetime on the single-event transient (SET) caused by heavy ions in silicon-germanium heterojunction bipolar transistor (SiGe HBT). The ion-induced current transients and integrated charge collections under different proton fluences are obtained based on technology computer-aided design (TCAD) simulation. The results indicate that the impact of carrier lifetime alteration is determined by the dominating charge collection mechanism at the ion incident position and only the long-time diffusion process is affected. With a proton fluence of 5×10¹³ cm^-2, almost no change is found in the transient feature, and the charge collection of events happened in the region enclosed by deep trench isolation (DTI), where prompt funneling collection is the dominating mechanism. Meanwhile, for the events happening outside DTI where diffusion dominates the collection process, the peak value and the duration of the ion-induced current transient both decrease with increasing proton fluence, leading to a great decrease in charge collection.

关键词: silicon-germanium heterojunction bipolar transistor (SiGe HBT), proton irradiation, minority carrier lifetime, single-event transient, technology computer-aided design (TCAD) simulation

Abstract:

Key words: silicon-germanium heterojunction bipolar transistor (SiGe HBT), proton irradiation, minority carrier lifetime, single-event transient, technology computer-aided design (TCAD) simulation

中图分类号: (γ-ray effects)

61.80.Ed

61.80.Jh (Ion radiation effects) 85.50.Gk (Non-volatile ferroelectric memories)

魏佳男, 贺朝会, 李培, 李永宏, 郭红霞. Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor[J]. 中国物理B, 2019, 28(7): 76106-076106.

Jia-Nan Wei(魏佳男), Chao-Hui He(贺朝会), Pei Li(李培), Yong-Hong Li(李永宏), Hong-Xia Guo(郭红霞). Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor[J]. Chin. Phys. B, 2019, 28(7): 76106-076106.

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Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor

Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor

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