Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor

doi:10.1088/1674-1056/26/8/088502

中国物理B ›› 2017, Vol. 26 ›› Issue (8): 88502-088502.doi: 10.1088/1674-1056/26/8/088502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor

Jin-Xin Zhang(张晋新), Chao-Hui He(贺朝会), Hong-Xia Guo(郭红霞), Pei Li(李培), Bao-Long Guo(郭宝龙), Xian-Xiang Wu(吴宪祥)

1 School of Aerospace Science and Technology, Xidian University, Xi' an 710126, China;
2 School of Energy and Power Engineering, Xi'an Jiaotong University, Xi'an 710049, China;
3 Northwest Institution of Nuclear Technology, Xi'an 710024, China

收稿日期:2017-04-05 修回日期:2017-04-29 出版日期:2017-08-05 发布日期:2017-08-05
通讯作者: Chao-Hui He E-mail:hechaohui@mail.xjtu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61274106, 11175138, and 61601352).

Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor

Jin-Xin Zhang(张晋新)¹, Chao-Hui He(贺朝会)², Hong-Xia Guo(郭红霞)³, Pei Li(李培)², Bao-Long Guo(郭宝龙)¹, Xian-Xiang Wu(吴宪祥)¹

1 School of Aerospace Science and Technology, Xidian University, Xi' an 710126, China;
2 School of Energy and Power Engineering, Xi'an Jiaotong University, Xi'an 710049, China;
3 Northwest Institution of Nuclear Technology, Xi'an 710024, China

Received:2017-04-05 Revised:2017-04-29 Online:2017-08-05 Published:2017-08-05
Contact: Chao-Hui He E-mail:hechaohui@mail.xjtu.edu.cn
About author:0.1088/1674-1056/26/8/
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61274106, 11175138, and 61601352).

摘要/Abstract

摘要：

The fabrication process dependent effects on single event effects (SEEs) are investigated in a commercial silicon-germanium heterojunction bipolar transistor (SiGe HBT) using three-dimensional (3D) TCAD simulations. The influences of device structure and doping concentration on SEEs are discussed via analysis of current transient and charge collection induced by ions strike. The results show that the SEEs representation of current transient is different from representation of the charge collection for the same process parameters. To be specific, the area of C/S junction is the key parameter that affects charge collection of SEE. Both current transient and charge collection are dependent on the doping of collector and substrate. The base doping slightly influences transient currents of base, emitter, and collector terminals. However, the SEEs of SiGe HBT are hardly affected by the doping of epitaxial base and the content of Ge.

关键词: SiGe HBT, single event effects, fabrication process dependence, 3D simulation

Abstract:

Key words: SiGe HBT, single event effects, fabrication process dependence, 3D simulation

中图分类号: (Bipolar transistors)

85.30.Pq

61.80.Az (Theory and models of radiation effects) 73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 75.40.Mg (Numerical simulation studies)

张晋新, 贺朝会, 郭红霞, 李培, 郭宝龙, 吴宪祥. Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor[J]. 中国物理B, 2017, 26(8): 88502-088502.

Jin-Xin Zhang(张晋新), Chao-Hui He(贺朝会), Hong-Xia Guo(郭红霞), Pei Li(李培), Bao-Long Guo(郭宝龙), Xian-Xiang Wu(吴宪祥). Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor[J]. Chin. Phys. B, 2017, 26(8): 88502-088502.

参考文献 25

[1]	Cressler J D 1998 IEEE Transactions on Microwave Theory and Techniques 46 572
[2]	Cressler J D and Niu G F 2003 Silicon-Germanium Heterojunction Bipolar Transistors (Boston, London: Artech House) p. 22
[3]	Cressler J D 2005 Proc. IEEE 93 1559
[4]	Appaswamy A 2010 "Operation of inverse mode SiGe HBTs and ultra-scaled CMOS devices in extreme environments", Ph. D. Dissertation (Georgia: Georgia Institute of Technology)
[5]	Bellini M 2009 "Operation of Silicon-Germanium heterojunction bipolar transistors on silicon-on insulator in extreme environments", Ph. D. Dissertation (Georgia: Georgia Institute of Technology)
[6]	Ramirez-Garciaa E, Zerounian N, Crozat P, Aguilar M, Chevalier P, Chantre A and Aniel F 2009 Cryogenics 49 620
[7]	Cressler J D 2003 IEEE Nuclear and Space Radiation Effects Conference Short Course Note Book Section V 3-6
[8]	Banerje G, Niu G, Cressler J D, Clark S D, Palmer M J and Ahlgren D C 1999 IEEE Trans. Nucl. Sci. 46 1620
[9]	Varadharajaperumal M 2010 "3D simulation of SEU in SiGe HBTS and radiation hardening by design", Master Thesis (Alabama: Auburn University)
[10]	Xu Z Y, Niu G F, Luo L, Cressler J D, Alles M L, Reed R, Mantooth H A, Holmes J and Marshall P W 2010 IEEE Trans. Nucl. Sci. 57 3206
[11]	Niu G, Yang H, Varadharajaperumal M, Shi Y, Cressler J D, Krithivasan R, Marshall P W and Reed R 2005 IEEE Tran. Nucl. Sci. 52 2153
[12]	Varadharajaperumal M, Niu G, Wei X, Zhang T, Cressler J D, Reed R and Marshall P W 2007 IEEE Tran. Nucl. Sci. 54 2330
[13]	Yang H 2005 "3D Device simulation of SEU-induced charge collection in 200 GHz SiGe HBTs", Master Thesis (Alabama: Auburn University)
[14]	Zhang J X, He C H, Guo H X, Tang D, Xiong C, Li P and Wang X 2014 Acta Phys. Sin. 63 248503 (in Chinese)
[15]	Zhang J X, He C H, Guo H X, Tang D, Xiong C, Li P and Wang X 2015 Microelectronics Reliability 55 1180
[16]	Zhang J X, Guo H X, Wen L, Guo Q, Cui J W, Wang X, Deng W, Zhen Q W, Fan X and Xiao Y 2014 J. Semicond. 35 044003
[17]	Zhang J X, Guo H X, Guo Q, Wen L, Cui J W, Xi S B, Wang X and Deng W 2013 Acta Phys. Sin. 62 048501 (in Chinese)
[18]	Li P, Guo H X, Guo Q, Zhang J X, Xiao Y, Wei Y, Cui J W, Wen L, Liu M H and Wang X 2015 Chin. Phys. B 24 088502
[19]	Liu W 2013 Radiation effect and radiation hardness technology of silicon semiconductor devices (Beijing: Science Press) pp. 20-29
[20]	Zhang B, Yang Y T, Li Y J and Xu X B 2012 Acta Phys. Sin. 61 238502 (in Chinese)
[21]	Shu B, Zhang H M, Hu H Y, Xuan R X, Dai X Y 2007 Acta Phys. Sin. 56 1105 (in Chinese)
[22]	Sentaurus Device User Guide (Version A-2008. 09). Synopsys, 2008
[23]	Bi J S, Zeng C B, Gao L C, Liu G, Luo J J and Han Z S 2014 Chin. Phys. B 23 088505
[24]	Guo Y, Chen J J, He Y B, Liang B and Liu B W 2013 Chin. Phys. B 22 046103
[25]	He Y 2014 "Research on several mechanisms of single event transient in Nano CMOS integrated circuits", Ph. D. Dissertation (Changsha: National University of Defense Technology) (in Chinese)

Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor

Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor

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