中国物理B ›› 2022, Vol. 31 ›› Issue (2): 28502-028502.doi: 10.1088/1674-1056/ac1331

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Radiation effects of 50-MeV protons on PNP bipolar junction transistors

Yuan-Ting Huang(黄垣婷), Xiu-Hai Cui(崔秀海), Jian-Qun Yang(杨剑群), Tao Ying(应涛), Xue-Qiang Yu(余雪强), Lei Dong(董磊), Wei-Qi Li(李伟奇), and Xing-Ji Li(李兴冀)†   

  1. School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
  • 收稿日期:2021-03-01 修回日期:2021-06-29 接受日期:2021-07-12 出版日期:2022-01-13 发布日期:2022-01-13
  • 通讯作者: Xing-Ji Li E-mail:lxj0218@hit.edu.cn
  • 基金资助:
    Project supported by No. TZ2018004.

Radiation effects of 50-MeV protons on PNP bipolar junction transistors

Yuan-Ting Huang(黄垣婷), Xiu-Hai Cui(崔秀海), Jian-Qun Yang(杨剑群), Tao Ying(应涛), Xue-Qiang Yu(余雪强), Lei Dong(董磊), Wei-Qi Li(李伟奇), and Xing-Ji Li(李兴冀)†   

  1. School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
  • Received:2021-03-01 Revised:2021-06-29 Accepted:2021-07-12 Online:2022-01-13 Published:2022-01-13
  • Contact: Xing-Ji Li E-mail:lxj0218@hit.edu.cn
  • Supported by:
    Project supported by No. TZ2018004.

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摘要： The effects of radiation on 3CG110 PNP bipolar junction transistors (BJTs) are characterized using 50-MeV protons, 40-MeV Si ions, and 1-MeV electrons. In this paper, electrical characteristics and deep level transient spectroscopy (DLTS) are utilized to analyze radiation defects induced by ionization and displacement damage. The experimental results show a degradation of the current gain and an increase in the types of radiation defect with increasing fluences of 50-MeV protons. Moreover, by comparing the types of damage caused by different radiation sources, the characteristics of the radiation defects induced by irradiation show that 50-MeV proton irradiation can produce both ionization and displacement defects in the 3CG110 PNP BJTs, in contrast to 40-MeV Si ions, which mainly generate displacement defects, and 1-MeV electrons, which mainly produce ionization defects. This work provides direct evidence of a synergistic effect between the ionization and displacement defects caused in PNP BJTs by 50-MeV protons.

关键词: bipolar junction transistors, electrical properties, radiation defects, synergistic effect

Abstract: The effects of radiation on 3CG110 PNP bipolar junction transistors (BJTs) are characterized using 50-MeV protons, 40-MeV Si ions, and 1-MeV electrons. In this paper, electrical characteristics and deep level transient spectroscopy (DLTS) are utilized to analyze radiation defects induced by ionization and displacement damage. The experimental results show a degradation of the current gain and an increase in the types of radiation defect with increasing fluences of 50-MeV protons. Moreover, by comparing the types of damage caused by different radiation sources, the characteristics of the radiation defects induced by irradiation show that 50-MeV proton irradiation can produce both ionization and displacement defects in the 3CG110 PNP BJTs, in contrast to 40-MeV Si ions, which mainly generate displacement defects, and 1-MeV electrons, which mainly produce ionization defects. This work provides direct evidence of a synergistic effect between the ionization and displacement defects caused in PNP BJTs by 50-MeV protons.

Key words: bipolar junction transistors, electrical properties, radiation defects, synergistic effect

中图分类号:  (Bipolar transistors)

  • 85.30.Pq
51.50.+v (Electrical properties) 61.80.-x (Physical radiation effects, radiation damage) 81.40.Wx (Radiation treatment)