中国物理B ›› 2016, Vol. 25 ›› Issue (5): 57306-057306.doi: 10.1088/1674-1056/25/5/057306
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
Chen-Fei Wu(武辰飞), Yun-Feng Chen(陈允峰), Hai Lu(陆海), Xiao-Ming Huang(黄晓明), Fang-Fang Ren(任芳芳), Dun-Jun Chen(陈敦军), Rong Zhang(张荣), You-Dou Zheng(郑有炓)
Chen-Fei Wu(武辰飞)1,2, Yun-Feng Chen(陈允峰)1,2, Hai Lu(陆海)1,2, Xiao-Ming Huang(黄晓明)3, Fang-Fang Ren(任芳芳)1,2, Dun-Jun Chen(陈敦军)1,2, Rong Zhang(张荣)1,2, You-Dou Zheng(郑有炓)1,2
摘要:
In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source/drain (S/D) series resistance in operating amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. The asymmetry behavior of S/D contact resistance is deduced and the underlying physics is discussed. The present results suggest that the asymmetry of S/D contact resistance is caused by the difference in bias conditions of the Schottky-like junction at the contact interface induced by the parasitic reaction between contact metal and a-IGZO. The overall contact resistance should be determined by both the bulk channel resistance of the contact region and the interface properties of the metal-semiconductor junction.
中图分类号: (Amorphous semiconductors; glasses)