中国物理B ›› 2010, Vol. 19 ›› Issue (6): 67304-067304.doi: 10.1088/1674-1056/19/6/067304

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One-dimensional continuous analytic potential solution to generic oxide－silicon－oxide system

张健1, 张立宁1, 何进2   

  1. (1)Institute of Microelectronics, School of Electronic Engineering and Computer Science, Peking University, Beijing 100871, China; (2)Institute of Microelectronics, School of Electronic Engineering and Computer Science, Peking University, Beijing 100871, China;The Key Laboratory of Integrated Microsystems, School of Computer {\& Information Engineering, Peking University Shenzhen Grad
  • 收稿日期:2009-06-01 出版日期:2010-06-15 发布日期:2010-06-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos.~60876027 and 60976066), and the National Science Fund for Distinguished Young Scholars of China (Grant No.~60925015).

One-dimensional continuous analytic potential solution to generic oxide－silicon－oxide system

Zhang Jian(张健)a), He Jin(何进)a)b)†, and Zhang Li-Ning(张立宁)a)   

  1. a Institute of Microelectronics, School of Electronic Engineering and Computer Science, Peking University, Beijing 100871, China; b The Key Laboratory of Integrated Microsystems, School of Computer & Information Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, China
  • Received:2009-06-01 Online:2010-06-15 Published:2010-06-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos.~60876027 and 60976066), and the National Science Fund for Distinguished Young Scholars of China (Grant No.~60925015).

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摘要： A one-dimensional continuous analytic potential solution to a generic oxide--silicon--oxide system is developed. With the analytic solution, the potential distribution in the silicon film is predicted. A physics-based relation between surface potentials is also derived and then applied to the generic oxide--silicon--oxide metal--oxide--semiconductor field-effect transistors (MOSFETs) for the calculation of surface potentials

Abstract: A one-dimensional continuous analytic potential solution to a generic oxide--silicon--oxide system is developed. With the analytic solution, the potential distribution in the silicon film is predicted. A physics-based relation between surface potentials is also derived and then applied to the generic oxide--silicon--oxide metal--oxide--semiconductor field-effect transistors (MOSFETs) for the calculation of surface potentials

Key words: surface potential, MOSFET modeling, oxide--silicon--oxide system

中图分类号:  (Field effect devices)

  • 85.30.Tv
85.30.De (Semiconductor-device characterization, design, and modeling) 73.40.Ty (Semiconductor-insulator-semiconductor structures)