中国物理B ›› 2015, Vol. 24 ›› Issue (7): 78502-078502.doi: 10.1088/1674-1056/24/7/078502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Characteristics of drain-modulated generation current in n-type metal-oxide-semiconductor field-effect transistor

陈海峰, 过立新, 郑璞阳, 董钊, 张茜   

  1. School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710121, China
  • 收稿日期:2014-12-22 修回日期:2015-01-21 出版日期:2015-07-05 发布日期:2015-07-05
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61306131) and the Research Project of Education Department of Shaanxi Province, China (Grant No. 2013JK1095).

Characteristics of drain-modulated generation current in n-type metal-oxide-semiconductor field-effect transistor

Chen Hai-Feng (陈海峰), Guo Li-Xin (过立新), Zheng Pu-Yang (郑璞阳), Dong Zhao (董钊), Zhang Qian (张茜)   

  1. School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710121, China
  • Received:2014-12-22 Revised:2015-01-21 Online:2015-07-05 Published:2015-07-05
  • Contact: Chen Hai-Feng E-mail:chenhaifeng@xupt.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61306131) and the Research Project of Education Department of Shaanxi Province, China (Grant No. 2013JK1095).

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摘要： Drain-modulated generation current IDMG induced by interface traps in an n-type metal-oxide-semiconductor field-effect transistor (nMOSFET) is investigated. The formation of IDMG ascribes to the change of the Si surface potential φs. This change makes the channel suffer transformation from the inversion state, depletion I state to depletion II state. The simulation result agrees with the experiment in the inversion and depletion I states. In the depletion II state, the theoretical curve goes into saturation, while the experimental curve drops quickly as VD increases. The reason for this unconformity is that the drain-to-gate voltage VDG lessens φs around the drain corner and controls the falling edge of the IDMG curve. The experiments of gate-modulated generation and recombination currents are also applied to verify the reasonability of the mechanism. Based on this mechanism, a theoretical model of the IDMG falling edge is set up in which IDMG has an exponential attenuation relation with VDG. Finally, the critical fitting coefficient t of the experimental curves is extracted. It is found that t=80 mV=3kT/q. This result fully shows the accuracy of the above mechanism.

关键词: interface trap, generation, surface potential, nMOSFET

Abstract: Drain-modulated generation current IDMG induced by interface traps in an n-type metal-oxide-semiconductor field-effect transistor (nMOSFET) is investigated. The formation of IDMG ascribes to the change of the Si surface potential φs. This change makes the channel suffer transformation from the inversion state, depletion I state to depletion II state. The simulation result agrees with the experiment in the inversion and depletion I states. In the depletion II state, the theoretical curve goes into saturation, while the experimental curve drops quickly as VD increases. The reason for this unconformity is that the drain-to-gate voltage VDG lessens φs around the drain corner and controls the falling edge of the IDMG curve. The experiments of gate-modulated generation and recombination currents are also applied to verify the reasonability of the mechanism. Based on this mechanism, a theoretical model of the IDMG falling edge is set up in which IDMG has an exponential attenuation relation with VDG. Finally, the critical fitting coefficient t of the experimental curves is extracted. It is found that t=80 mV=3kT/q. This result fully shows the accuracy of the above mechanism.

Key words: interface trap, generation, surface potential, nMOSFET

中图分类号:  (Semiconductor-device characterization, design, and modeling)

  • 85.30.De
85.30.Tv (Field effect devices)