中国物理B ›› 2016, Vol. 25 ›› Issue (5): 57306-057306.doi: 10.1088/1674-1056/25/5/057306

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Contact resistance asymmetry of amorphous indium-gallium-zinc-oxide thin-film transistors by scanning Kelvin probe microscopy

Chen-Fei Wu(武辰飞), Yun-Feng Chen(陈允峰), Hai Lu(陆海), Xiao-Ming Huang(黄晓明), Fang-Fang Ren(任芳芳), Dun-Jun Chen(陈敦军), Rong Zhang(张荣), You-Dou Zheng(郑有炓)   

  1. 1. Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
    2. Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;
    3. Peter Grünberg Research Center, Nanjing University of Posts and Telecommunications, Nanjing 210003, China
  • 收稿日期:2015-11-04 修回日期:2016-01-05 出版日期:2016-05-05 发布日期:2016-05-05
  • 通讯作者: Hai Lu E-mail:hailu@nju.edu.cn
  • 基金资助:

    Project supported by the Key Industrial R&D Program of Jiangsu Province, China (Grant No. BE2015155), the Priority Academic Program Development of Higher Education Institutions of Jiangsu Province, China, and the Fundamental Research Funds for the Central Universities, China (Grant No. 021014380033).

Contact resistance asymmetry of amorphous indium-gallium-zinc-oxide thin-film transistors by scanning Kelvin probe microscopy

Chen-Fei Wu(武辰飞)1,2, Yun-Feng Chen(陈允峰)1,2, Hai Lu(陆海)1,2, Xiao-Ming Huang(黄晓明)3, Fang-Fang Ren(任芳芳)1,2, Dun-Jun Chen(陈敦军)1,2, Rong Zhang(张荣)1,2, You-Dou Zheng(郑有炓)1,2   

  1. 1. Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
    2. Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;
    3. Peter Grünberg Research Center, Nanjing University of Posts and Telecommunications, Nanjing 210003, China
  • Received:2015-11-04 Revised:2016-01-05 Online:2016-05-05 Published:2016-05-05
  • Contact: Hai Lu E-mail:hailu@nju.edu.cn
  • Supported by:

    Project supported by the Key Industrial R&D Program of Jiangsu Province, China (Grant No. BE2015155), the Priority Academic Program Development of Higher Education Institutions of Jiangsu Province, China, and the Fundamental Research Funds for the Central Universities, China (Grant No. 021014380033).

RichHTML

0

PDF (PC)

580

赞

摘要：

In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source/drain (S/D) series resistance in operating amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. The asymmetry behavior of S/D contact resistance is deduced and the underlying physics is discussed. The present results suggest that the asymmetry of S/D contact resistance is caused by the difference in bias conditions of the Schottky-like junction at the contact interface induced by the parasitic reaction between contact metal and a-IGZO. The overall contact resistance should be determined by both the bulk channel resistance of the contact region and the interface properties of the metal-semiconductor junction.

关键词: amorphous indium-gallium-zinc-oxide thin-film transistors, contact resistance, surface potential

Abstract:

In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source/drain (S/D) series resistance in operating amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. The asymmetry behavior of S/D contact resistance is deduced and the underlying physics is discussed. The present results suggest that the asymmetry of S/D contact resistance is caused by the difference in bias conditions of the Schottky-like junction at the contact interface induced by the parasitic reaction between contact metal and a-IGZO. The overall contact resistance should be determined by both the bulk channel resistance of the contact region and the interface properties of the metal-semiconductor junction.

Key words: amorphous indium-gallium-zinc-oxide thin-film transistors, contact resistance, surface potential

中图分类号:  (Amorphous semiconductors; glasses)

  • 73.61.Jc
73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 73.30.+y (Surface double layers, Schottky barriers, and work functions) 73.40.Cg (Contact resistance, contact potential)