Surface potential-based analytical model for InGaZnO thin-film transistors with independent dual-gates

doi:10.1088/1674-1056/ab75d2

中国物理B ›› 2020, Vol. 29 ›› Issue (4): 47102-047102.doi: 10.1088/1674-1056/ab75d2

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Surface potential-based analytical model for InGaZnO thin-film transistors with independent dual-gates

Yi-Ni He(何伊妮), Lian-Wen Deng(邓联文), Ting Qin(覃婷), Cong-Wei Liao(廖聪维), Heng Luo(罗衡), Sheng-Xiang Huang(黄生祥)

School of Physics and Electronics, Central South University, Changsha 410083, China

收稿日期:2019-12-18 修回日期:2020-01-29 出版日期:2020-04-05 发布日期:2020-04-05
通讯作者: Lian-Wen Deng E-mail:denglw@csu.edu.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2017YFA0204600) and the Fundamental Research Funds for the Central Universities of Central South University, China (Grant No. 2019zzts424).

Surface potential-based analytical model for InGaZnO thin-film transistors with independent dual-gates

Yi-Ni He(何伊妮), Lian-Wen Deng(邓联文), Ting Qin(覃婷), Cong-Wei Liao(廖聪维), Heng Luo(罗衡), Sheng-Xiang Huang(黄生祥)

School of Physics and Electronics, Central South University, Changsha 410083, China

Received:2019-12-18 Revised:2020-01-29 Online:2020-04-05 Published:2020-04-05
Contact: Lian-Wen Deng E-mail:denglw@csu.edu.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2017YFA0204600) and the Fundamental Research Funds for the Central Universities of Central South University, China (Grant No. 2019zzts424).

摘要/Abstract

摘要： An analytical drain current model on the basis of the surface potential is proposed for indium-gallium zinc oxide (InGaZnO) thin-film transistors (TFTs) with an independent dual-gate (IDG) structure. For a unified expression of carriers' distribution for the sub-threshold region and the conduction region, the concept of equivalent flat-band voltage and the Lambert W function are introduced to solve the Poisson equation, and to derive the potential distribution of the active layer. In addition, the regional integration approach is used to develop a compact analytical current-voltage model. Although only two fitting parameters are required, a good agreement is obtained between the calculated results by the proposed model and the simulation results by TCAD. The proposed current-voltage model is then implemented by using Verilog-A for SPICE simulations of a dual-gate InGaZnO TFT integrated inverter circuit.

关键词: analytical model, independent dual-gate, indium-gallium zinc oxide (InGaZnO), surface potential

Abstract: An analytical drain current model on the basis of the surface potential is proposed for indium-gallium zinc oxide (InGaZnO) thin-film transistors (TFTs) with an independent dual-gate (IDG) structure. For a unified expression of carriers' distribution for the sub-threshold region and the conduction region, the concept of equivalent flat-band voltage and the Lambert W function are introduced to solve the Poisson equation, and to derive the potential distribution of the active layer. In addition, the regional integration approach is used to develop a compact analytical current-voltage model. Although only two fitting parameters are required, a good agreement is obtained between the calculated results by the proposed model and the simulation results by TCAD. The proposed current-voltage model is then implemented by using Verilog-A for SPICE simulations of a dual-gate InGaZnO TFT integrated inverter circuit.

Key words: analytical model, independent dual-gate, indium-gallium zinc oxide (InGaZnO), surface potential

中图分类号: (Theories and models; localized states)

71.23.An

73.43.Cd (Theory and modeling) 73.20.At (Surface states, band structure, electron density of states)

何伊妮, 邓联文, 覃婷, 廖聪维, 罗衡, 黄生祥. Surface potential-based analytical model for InGaZnO thin-film transistors with independent dual-gates[J]. 中国物理B, 2020, 29(4): 47102-047102.

Yi-Ni He(何伊妮), Lian-Wen Deng(邓联文), Ting Qin(覃婷), Cong-Wei Liao(廖聪维), Heng Luo(罗衡), Sheng-Xiang Huang(黄生祥). Surface potential-based analytical model for InGaZnO thin-film transistors with independent dual-gates[J]. Chin. Phys. B, 2020, 29(4): 47102-047102.

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Surface potential-based analytical model for InGaZnO thin-film transistors with independent dual-gates

Surface potential-based analytical model for InGaZnO thin-film transistors with independent dual-gates

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