中国物理B ›› 2012, Vol. 21 ›› Issue (8): 88103-088103.doi: 10.1088/1674-1056/21/8/088103

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Vertical assembly of carbon nanotubes for via interconnects

魏芹芹a b, 魏子钧a, 任黎明a, 赵华波a, 叶天扬a, 施祖进c, 傅云义a, 张兴a, 黄如a   

  1. a Institute of Microelectronics, Peking University, Beijing 100871, China;
    b School of Electrical and Electronic Engineering, Shandong University of Technology, Zibo 255049, China;
    c College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
  • 收稿日期:2012-04-05 修回日期:2012-04-16 出版日期:2012-07-01 发布日期:2012-07-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60625403, 60925015, and 61076069), the National Basic Research Program of China (Grant Nos. 2011CBA00600 and 2011CBA00601), and the Instrumental Analysis Fund of Peking University, China.

Vertical assembly of carbon nanotubes for via interconnects

Wei Qin-Qin (魏芹芹)a b, Wei Zi-Jun (魏子钧)a, Ren Li-Ming (任黎明)a, Zhao Hua-Bo (赵华波)a, Ye Tian-Yang (叶天扬)a, Shi Zu-Jin (施祖进)c, Fu Yun-Yi (傅云义)a, Zhang Xing (张兴)a, Huang Ru (黄如)a   

  1. a Institute of Microelectronics, Peking University, Beijing 100871, China;
    b School of Electrical and Electronic Engineering, Shandong University of Technology, Zibo 255049, China;
    c College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
  • Received:2012-04-05 Revised:2012-04-16 Online:2012-07-01 Published:2012-07-01
  • Contact: Fu Yun-Yi E-mail:yyfu@pku.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60625403, 60925015, and 61076069), the National Basic Research Program of China (Grant Nos. 2011CBA00600 and 2011CBA00601), and the Instrumental Analysis Fund of Peking University, China.

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摘要： The via interconnects are key components in ultra-large scale integrated circuits (ULSI). This paper deals with a new method to create single-walled carbon nanotubes (SWNTs) via interconnects using alternating dielectrophoresis (DEP). Carbon nanotubes are vertically assembled in the microscale via-holes successfully at room temperature under ambient condition. The electrical evaluation of the SWNT vias reveals that our DEP assembly technique is highly reliable and the success rate of assembly can be as high as 90%. We also propose and test possible approaches to reducing the contact resistance between CNT vias and metal electrodes.

关键词: carbon nanotube, via interconnects, dielectrophoresis, electrical properties, contact resistance

Abstract: The via interconnects are key components in ultra-large scale integrated circuits (ULSI). This paper deals with a new method to create single-walled carbon nanotubes (SWNTs) via interconnects using alternating dielectrophoresis (DEP). Carbon nanotubes are vertically assembled in the microscale via-holes successfully at room temperature under ambient condition. The electrical evaluation of the SWNT vias reveals that our DEP assembly technique is highly reliable and the success rate of assembly can be as high as 90%. We also propose and test possible approaches to reducing the contact resistance between CNT vias and metal electrodes.

Key words: carbon nanotube, via interconnects, dielectrophoresis, electrical properties, contact resistance

中图分类号:  (Diamond/nanocarbon composites)

  • 81.05.uj
85.40.Ls (Metallization, contacts, interconnects; device isolation) 87.50.ch (Electrophoresis/dielectrophoresis and other mechanical effects) 73.63.-b (Electronic transport in nanoscale materials and structures)