中国物理B ›› 2012, Vol. 21 ›› Issue (11): 117307-117307.doi: 10.1088/1674-1056/21/11/117307

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Enhanced charge carrier injection in heterojunction organic field-effect transistor by inserting an MoO3 buffer layer

于欣格, 于军胜, 黄伟, 曾红娟   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China
  • 收稿日期:2012-04-18 修回日期:2012-05-08 出版日期:2012-10-01 发布日期:2012-10-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61071026 and 61177032), the Science of Fund for Creative Research Groups of the National Natural Science Foundation of China (Grant No. 61021061), the Fundamental Research Fund for the Central Universities of Misistry of Education of China (Grant No. ZYGX2010Z004), and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20090185110020).

Enhanced charge carrier injection in heterojunction organic field-effect transistor by inserting an MoO3 buffer layer

Yu Xin-Ge (于欣格), Yu Jun-Sheng (于军胜), Huang Wei (黄伟), Zeng Hong-Juan (曾红娟 )   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China
  • Received:2012-04-18 Revised:2012-05-08 Online:2012-10-01 Published:2012-10-01
  • Contact: Yu Jun-Sheng E-mail:jsyu@uestc.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61071026 and 61177032), the Science of Fund for Creative Research Groups of the National Natural Science Foundation of China (Grant No. 61021061), the Fundamental Research Fund for the Central Universities of Misistry of Education of China (Grant No. ZYGX2010Z004), and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20090185110020).

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摘要： Top-contact organic field-effect transistor (OFET) is fabricated by adopting a pentacene/1,1'-bis(di-4-tolylaminophenyl) cyclohexane (TAPC) heterojunction structure and inserting an MoO3 buffer layer between TAPC organic semiconductor layer and source/drain electrode. The performances of the heterojunction OFET, including output current, field-effect mobility, and threshed voltage, are all significantly improved by introducing the MoO3 thin buffer layer. The performance improvement of the modified heterojunction OFET is attributed to a better contact formed at the Au/TAPC interface due to the MoO3 thin buffer layer, thereby leading to a remarkable reduction of the contact resistance at the metal/organic interface.

关键词: organic field-effect transistor (OFET), MoO3 buffer layer, heterojunction structure, contact resistance

Abstract: Top-contact organic field-effect transistor (OFET) is fabricated by adopting a pentacene/1,1'-bis(di-4-tolylaminophenyl) cyclohexane (TAPC) heterojunction structure and inserting an MoO3 buffer layer between TAPC organic semiconductor layer and source/drain electrode. The performances of the heterojunction OFET, including output current, field-effect mobility, and threshed voltage, are all significantly improved by introducing the MoO3 thin buffer layer. The performance improvement of the modified heterojunction OFET is attributed to a better contact formed at the Au/TAPC interface due to the MoO3 thin buffer layer, thereby leading to a remarkable reduction of the contact resistance at the metal/organic interface.

Key words: organic field-effect transistor (OFET), MoO3 buffer layer, heterojunction structure, contact resistance

中图分类号:  (Contact resistance, contact potential)

  • 73.40.Cg
73.61.Ph (Polymers; organic compounds) 73.61.Wp (Fullerenes and related materials) 85.30.Tv (Field effect devices)