中国物理B ›› 2016, Vol. 25 ›› Issue (11): 118101-118101.doi: 10.1088/1674-1056/25/11/118101

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Low specific contact resistivity to graphene achieved by AuGe/Ni/Au and annealing process

Shu-Zhen Yu(于淑珍), Yan Song(宋焱), Jian-Rong Dong(董建荣), Yu-Run Sun(孙玉润), Yong-Ming Zhao(赵勇明), Yang He(何洋)   

  1. 1 Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;
    2 Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, China;
    3 University of Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2016-05-19 修回日期:2016-08-02 出版日期:2016-11-05 发布日期:2016-11-05
  • 通讯作者: Shu-Zhen Yu E-mail:szyu2010@sinano.ac.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61376065) and the Science and Technology Project of Suzhou, China (Grant No. ZXG2013044).

Low specific contact resistivity to graphene achieved by AuGe/Ni/Au and annealing process

Shu-Zhen Yu(于淑珍)1, Yan Song(宋焱)1,2, Jian-Rong Dong(董建荣)1, Yu-Run Sun(孙玉润)1, Yong-Ming Zhao(赵勇明)1,3, Yang He(何洋)1,3   

  1. 1 Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;
    2 Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, China;
    3 University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2016-05-19 Revised:2016-08-02 Online:2016-11-05 Published:2016-11-05
  • Contact: Shu-Zhen Yu E-mail:szyu2010@sinano.ac.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61376065) and the Science and Technology Project of Suzhou, China (Grant No. ZXG2013044).

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摘要： Low metal-graphene contact resistance is important in making high-performance graphene devices. In this work, we demonstrate a lower specific contact resistivity of Au0.88 Ge0.12/Ni/Au-graphene contact compared with Ti/Au and Ti/Pt/Au contacts. The rapid thermal annealing process was optimized to improve AuGe/Ni/Au contact resistance. Results reveal that both pre- and post-annealing processes are effective for reducing the contact resistance. The specific contact resistivity decreases from 2.5×10-4 to 7.8×10-5 Ω·cm2 by pre-annealing at 300℃ for one hour, and continues to decrease to 9.5×10-7 Ω·cm2 after post-annealing at 490℃ for 60 seconds. These approaches provide reliable means of lowering contact resistance.

关键词: graphene, AuGe/Ni/Au, annealing, contact resistance

Abstract: Low metal-graphene contact resistance is important in making high-performance graphene devices. In this work, we demonstrate a lower specific contact resistivity of Au0.88 Ge0.12/Ni/Au-graphene contact compared with Ti/Au and Ti/Pt/Au contacts. The rapid thermal annealing process was optimized to improve AuGe/Ni/Au contact resistance. Results reveal that both pre- and post-annealing processes are effective for reducing the contact resistance. The specific contact resistivity decreases from 2.5×10-4 to 7.8×10-5 Ω·cm2 by pre-annealing at 300℃ for one hour, and continues to decrease to 9.5×10-7 Ω·cm2 after post-annealing at 490℃ for 60 seconds. These approaches provide reliable means of lowering contact resistance.

Key words: graphene, AuGe/Ni/Au, annealing, contact resistance

中图分类号:  (Graphene)

  • 81.05.ue
73.40.Ns (Metal-nonmetal contacts) 61.72.Bb (Theories and models of crystal defects)