Introduction of F4-TCNQ/MoO3 layers for thermoelectric devices based on pentacene

doi:10.1088/1674-1056/23/9/098502

中国物理B ›› 2014, Vol. 23 ›› Issue (9): 98502-098502.doi: 10.1088/1674-1056/23/9/098502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Introduction of F₄-TCNQ/MoO₃ layers for thermoelectric devices based on pentacene

吴双红^{a b c}, Ryosuke Nakamichi^{a b}, Masatsugu Taned^{a b}, 张其胜^d, Chihaya Adachi^{a b d}

a Life BEANS Center Kyushu, Bio Electromechanical Autonomous Nano-Systems (BEANS) Laboratory, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan;
b Center for Future Chemistry, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan;
c School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China;
d Center for Organic Photonics and Electronics Research (OPERA) and International Institute for Carbon Neutral Energy Research (WPI-I2CNER), Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395, Japan

收稿日期:2014-02-18 修回日期:2014-04-25 出版日期:2014-09-15 发布日期:2014-09-15
基金资助:
Project supported by the New Energy and Industrial Technology Development Organization (NEDO), the Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST), and the International Institute for Carbon Neutral Energy Research (WPI-I2CNER) sponsored by MEXT.

Introduction of F₄-TCNQ/MoO₃ layers for thermoelectric devices based on pentacene

Wu Shuang-Hong (吴双红)^{a b c}, Ryosuke Nakamichi^{a b}, Masatsugu Taneda^{a b}, Zhang Qi-Sheng (张其胜)^d, Chihaya Adachi^{a b d}

a Life BEANS Center Kyushu, Bio Electromechanical Autonomous Nano-Systems (BEANS) Laboratory, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan;
b Center for Future Chemistry, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan;
c School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China;
d Center for Organic Photonics and Electronics Research (OPERA) and International Institute for Carbon Neutral Energy Research (WPI-I2CNER), Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395, Japan

Received:2014-02-18 Revised:2014-04-25 Online:2014-09-15 Published:2014-09-15
Contact: Chihaya Adachi E-mail:adachi@cstf.kyushu-u.ac.jp
Supported by:
Project supported by the New Energy and Industrial Technology Development Organization (NEDO), the Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST), and the International Institute for Carbon Neutral Energy Research (WPI-I2CNER) sponsored by MEXT.

摘要/Abstract

摘要： We introduced a dual electron accepting layer composed of tetrafluoro-tetracyanoquinodimethane (F₄-TCNQ) and MoO₃ for thermoelectric devices based on a pentacene layer. We found that the power factor is enhanced by placing an F₄-TCNQ layer directly in contact with the pentacene layer and it is also enhanced by placing a MoO₃ layer between the F₄-TCNQ layer and the Au electrode. By examining the contact resistance using a field effect transistor and a hole-only diode, we confirmed that the hole injection is improved due to the reduction of contact resistance at the interface between the MoO₃ layer and the Au electrode.

关键词: thermoelectrics, pentacene, MoO₃, contact resistance

Abstract: We introduced a dual electron accepting layer composed of tetrafluoro-tetracyanoquinodimethane (F₄-TCNQ) and MoO₃ for thermoelectric devices based on a pentacene layer. We found that the power factor is enhanced by placing an F₄-TCNQ layer directly in contact with the pentacene layer and it is also enhanced by placing a MoO₃ layer between the F₄-TCNQ layer and the Au electrode. By examining the contact resistance using a field effect transistor and a hole-only diode, we confirmed that the hole injection is improved due to the reduction of contact resistance at the interface between the MoO₃ layer and the Au electrode.

Key words: thermoelectrics, pentacene, MoO₃, contact resistance

中图分类号:

85.50.Fi

84.60.Rb (Thermoelectric, electrogasdynamic and other direct energy conversion) 73.50.Lw (Thermoelectric effects)

吴双红, Ryosuke Nakamichi, Masatsugu Taned, 张其胜, Chihaya Adachi. Introduction of F₄-TCNQ/MoO₃ layers for thermoelectric devices based on pentacene[J]. 中国物理B, 2014, 23(9): 98502-098502.

Wu Shuang-Hong (吴双红), Ryosuke Nakamichi, Masatsugu Taneda, Zhang Qi-Sheng (张其胜), Chihaya Adachi. Introduction of F₄-TCNQ/MoO₃ layers for thermoelectric devices based on pentacene[J]. Chin. Phys. B, 2014, 23(9): 98502-098502.

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Introduction of F₄-TCNQ/MoO₃ layers for thermoelectric devices based on pentacene

Introduction of F₄-TCNQ/MoO₃ layers for thermoelectric devices based on pentacene

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