中国物理B ›› 2011, Vol. 20 ›› Issue (1): 17301-017301.doi: 10.1088/1674-1056/20/1/017301

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Two-dimensional analytical models for asymmetric fully depleted double-gate strained silicon MOSFETs

刘红侠, 李劲, 李斌, 曹磊, 袁博   

  1. Key Laboratory of Ministry of Education for Wide Bandgap Semiconductor Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
  • 收稿日期:2010-06-23 修回日期:2010-08-11 出版日期:2011-01-15 发布日期:2011-01-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 60936005), the Cultivation Fund of the Major Science and Technology Innovation, Ministry of Education, China (Grant No. 708083), Specialized Research Fund for the Doctoral Program of Higher Education (Grant No. 200807010010) and the Fundamental Research Funds for the Central Universities.

Two-dimensional analytical models for asymmetric fully depleted double-gate strained silicon MOSFETs

Liu Hong-Xia(刘红侠)†, Li Jin(李劲),Li Bin(李斌), Cao Lei(曹磊),and Yuan Bo(袁博)   

  1. Key Laboratory of Ministry of Education for Wide Bandgap Semiconductor Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
  • Received:2010-06-23 Revised:2010-08-11 Online:2011-01-15 Published:2011-01-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 60936005), the Cultivation Fund of the Major Science and Technology Innovation, Ministry of Education, China (Grant No. 708083), Specialized Research Fund for the Doctoral Program of Higher Education (Grant No. 200807010010) and the Fundamental Research Funds for the Central Universities.

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摘要： This paper develops the simple and accurate two-dimensional analytical models for new asymmetric double-gate fully depleted strained-Si MOSFET. The models mainly include the analytical equations of the surface potential, surface electric field and threshold voltage, which are derived by solving two dimensional Poisson equation in strained-Si layer. The models are verified by numerical simulation. Besides offering the physical insight into device physics in the model, the new structure also provides the basic designing guidance for further immunity of short channel effect and drain-induced barrier-lowering of CMOS-based devices in nanometre scale.

Abstract: This paper develops the simple and accurate two-dimensional analytical models for new asymmetric double-gate fully depleted strained-Si MOSFET. The models mainly include the analytical equations of the surface potential, surface electric field and threshold voltage, which are derived by solving two dimensional Poisson equation in strained-Si layer. The models are verified by numerical simulation. Besides offering the physical insight into device physics in the model, the new structure also provides the basic designing guidance for further immunity of short channel effect and drain-induced barrier-lowering of CMOS-based devices in nanometre scale.

Key words: strained-Si, double-gate MOSFET, surface potential, short-channel effect

中图分类号:  (Surface states, band structure, electron density of states)

  • 73.20.At
73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 73.50.Gr (Charge carriers: generation, recombination, lifetime, trapping, mean free paths)