中国物理B ›› 2016, Vol. 25 ›› Issue (2): 27303-027303.doi: 10.1088/1674-1056/25/2/027303

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor

Jun Luo(罗俊), Sheng-Lei Zhao(赵胜雷), Min-Han Mi(宓珉瀚), Wei-Wei Chen(陈伟伟), Bin Hou(侯斌), Jin-Cheng Zhang(张进成), Xiao-Hua Ma(马晓华), Yue Hao(郝跃)   

  1. 1. Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
    2. School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China
  • 收稿日期:2015-08-15 修回日期:2015-10-02 出版日期:2016-02-05 发布日期:2016-02-05
  • 通讯作者: Yue Hao E-mail:yhao@xidian.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002, 61106106, and 61204085).

Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor

Jun Luo(罗俊)1, Sheng-Lei Zhao(赵胜雷)1, Min-Han Mi(宓珉瀚)1, Wei-Wei Chen(陈伟伟)2, Bin Hou(侯斌)2, Jin-Cheng Zhang(张进成)1, Xiao-Hua Ma(马晓华)1,2, Yue Hao(郝跃)1   

  1. 1. Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
    2. School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China
  • Received:2015-08-15 Revised:2015-10-02 Online:2016-02-05 Published:2016-02-05
  • Contact: Yue Hao E-mail:yhao@xidian.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002, 61106106, and 61204085).

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摘要： The effects of gate length LG on breakdown voltage VBR are investigated in AlGaN/GaN high-electron-mobility transistors (HEMTs) with LG = 1 μm～ 20 μm. With the increase of LG, VBR is first increased, and then saturated at LG=3 μm. For the HEMT with LG=1 μm, breakdown voltage VBR is 117 V, and it can be enhanced to 148 V for the HEMT with LG = 3 μm. The gate length of 3 μm can alleviate the buffer-leakage-induced impact ionization compared with the gate length of 1 μm, and the suppression of the impact ionization is the reason for improving the breakdown voltage. A similar suppression of the impact ionization exists in the HEMTs with LG>3 μm. As a result, there is no obvious difference in breakdown voltage among the HEMTs with LG = 3 μm～ 20 μm, and their breakdown voltages are in a range of 140 V-156 V.

关键词: AlGaN/GaN high-electron-mobility transistors (HEMTs), breakdown voltage, gate length

Abstract: The effects of gate length LG on breakdown voltage VBR are investigated in AlGaN/GaN high-electron-mobility transistors (HEMTs) with LG = 1 μm～ 20 μm. With the increase of LG, VBR is first increased, and then saturated at LG=3 μm. For the HEMT with LG=1 μm, breakdown voltage VBR is 117 V, and it can be enhanced to 148 V for the HEMT with LG = 3 μm. The gate length of 3 μm can alleviate the buffer-leakage-induced impact ionization compared with the gate length of 1 μm, and the suppression of the impact ionization is the reason for improving the breakdown voltage. A similar suppression of the impact ionization exists in the HEMTs with LG>3 μm. As a result, there is no obvious difference in breakdown voltage among the HEMTs with LG = 3 μm～ 20 μm, and their breakdown voltages are in a range of 140 V-156 V.

Key words: AlGaN/GaN high-electron-mobility transistors (HEMTs), breakdown voltage, gate length

中图分类号:  (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Kp
73.61.Ey (III-V semiconductors) 78.30.Fs (III-V and II-VI semiconductors)