In-plane optical anisotropy of InGaN/GaN quantum disks in nanowires investigated by reflectance difference spectroscopy

doi:10.1088/1674-1056/adc6f4

中国物理B ›› 2025, Vol. 34 ›› Issue (6): 67302-067302.doi: 10.1088/1674-1056/adc6f4

In-plane optical anisotropy of InGaN/GaN quantum disks in nanowires investigated by reflectance difference spectroscopy

Tingting Wei(韦婷婷)¹, Jinling Yu(俞金玲)^1,†, Zhu Diao⁴, Zhaonan Li(李兆男)⁵, Shuying Cheng(程树英)¹, Yunfeng Lai(赖云锋)¹, Yonghai Chen(陈涌海)^2,3, and Chao Zhao(赵超)^2,3

1 Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China;
2 Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
3 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101804, China;
4 Department of Electronic Engineering and Maynooth International Engineering College, Maynooth University, Maynooth, Co. Kildare, Ireland;
5 School of Integrated Circuits, Anhui University, Hefei 230601, China

收稿日期:2024-12-27 修回日期:2025-03-10 接受日期:2025-03-31 出版日期:2025-05-16 发布日期:2025-06-11
通讯作者: Jinling Yu E-mail:jlyu@semi.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 62074036, 61674038, and 11574302), Foreign Cooperation Project of Fujian Province (Grant No. 2023I0005), Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics (Grant No. KF202108), the National Key Research and Development Program (Grant No. 2016YFB0402303), and the Foundation of Fujian Provincial Department of Industry and Information Technology of China (Grant No. 82318075).

In-plane optical anisotropy of InGaN/GaN quantum disks in nanowires investigated by reflectance difference spectroscopy

1 Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China;
2 Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
3 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101804, China;
4 Department of Electronic Engineering and Maynooth International Engineering College, Maynooth University, Maynooth, Co. Kildare, Ireland;
5 School of Integrated Circuits, Anhui University, Hefei 230601, China

Received:2024-12-27 Revised:2025-03-10 Accepted:2025-03-31 Online:2025-05-16 Published:2025-06-11
Contact: Jinling Yu E-mail:jlyu@semi.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 62074036, 61674038, and 11574302), Foreign Cooperation Project of Fujian Province (Grant No. 2023I0005), Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics (Grant No. KF202108), the National Key Research and Development Program (Grant No. 2016YFB0402303), and the Foundation of Fujian Provincial Department of Industry and Information Technology of China (Grant No. 82318075).

摘要/Abstract

摘要： The in-plane optical anisotropy (IPOA) of $c$-plane InGaN/GaN quantum disks (Qdisks) in nanowires grown on MoS$_2$/Mo and Ti/Mo substrates is investigated using reflectance difference spectroscopy (RDS) at room temperature. A large IPOA related to defect or impurity states is observed. The IPOA of samples grown on MoS$_2$/Mo is approximately one order of magnitude larger than that of samples grown on Ti/Mo substrates. Numerical calculations based on the envelope function approximation have been performed to analyze the origin of the IPOA. It is found that the IPOA primarily results from the segregation of indium atoms in the InGaN/GaN Qdisks. This work highlights the significant influence of substrate materials on the IPOA of semiconductor heterostructures.

关键词: in-plane optical anisotropy, $\bm{k}\cdot \bm{p}$ method, InGaN/GaN, reflectance difference spectroscopy

Abstract: The in-plane optical anisotropy (IPOA) of $c$-plane InGaN/GaN quantum disks (Qdisks) in nanowires grown on MoS$_2$/Mo and Ti/Mo substrates is investigated using reflectance difference spectroscopy (RDS) at room temperature. A large IPOA related to defect or impurity states is observed. The IPOA of samples grown on MoS$_2$/Mo is approximately one order of magnitude larger than that of samples grown on Ti/Mo substrates. Numerical calculations based on the envelope function approximation have been performed to analyze the origin of the IPOA. It is found that the IPOA primarily results from the segregation of indium atoms in the InGaN/GaN Qdisks. This work highlights the significant influence of substrate materials on the IPOA of semiconductor heterostructures.

Key words: in-plane optical anisotropy, $\bm{k}\cdot \bm{p}$ method, InGaN/GaN, reflectance difference spectroscopy

中图分类号: (Quantum wells)

73.21.Fg

78.20.Bh (Theory, models, and numerical simulation) 78.55.Cr (III-V semiconductors) 78.67.Uh (Nanowires)

Tingting Wei(韦婷婷), Jinling Yu(俞金玲), Zhu Diao, Zhaonan Li(李兆男), Shuying Cheng(程树英), Yunfeng Lai(赖云锋), Yonghai Chen(陈涌海), and Chao Zhao(赵超). In-plane optical anisotropy of InGaN/GaN quantum disks in nanowires investigated by reflectance difference spectroscopy[J]. 中国物理B, 2025, 34(6): 67302-067302.

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In-plane optical anisotropy of InGaN/GaN quantum disks in nanowires investigated by reflectance difference spectroscopy

In-plane optical anisotropy of InGaN/GaN quantum disks in nanowires investigated by reflectance difference spectroscopy

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