Theoretical analysis of semi/non-polar InGaN/GaN light-emitting diodes grown on silicon substrates

doi:10.1088/1674-1056/24/7/077801

中国物理B ›› 2015, Vol. 24 ›› Issue (7): 77801-077801.doi: 10.1088/1674-1056/24/7/077801

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Theoretical analysis of semi/non-polar InGaN/GaN light-emitting diodes grown on silicon substrates

于磊^a, 张苑文^a, 李凯^a, 皮辉^a, 刁家声^a, 王幸福^a, 胡文晓^a, 张崇臻^a, 宋伟东^a, 沈岳^a, 李述体^{a b}

a Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
b Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, Guangzhou 510631, China

收稿日期:2014-11-07 修回日期:2015-02-02 出版日期:2015-07-05 发布日期:2015-07-05
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 51172079), the Science and Technology Program of Guangdong Province, China (Grant Nos. 2010B090400456 and 2010A081002002), the Science and Technology Program of Guangzhou, China (Grant No. 2011J4300018), and the Program for Changjiang Scholars and Innovative Research Team in Universities of China (Grant No. IRT13064).

Theoretical analysis of semi/non-polar InGaN/GaN light-emitting diodes grown on silicon substrates

Yu Lei (于磊)^a, Zhang Yuan-Wen (张苑文)^a, Li Kai (李凯)^a, Pi Hui (皮辉)^a, Diao Jia-Sheng (刁家声)^a, Wang Xing-Fu (王幸福)^a, Hu Wen-Xiao (胡文晓)^a, Zhang Chong-Zhen (张崇臻)^a, Song Wei-Dong (宋伟东)^a, Shen Yue (沈岳)^a, Li Shu-Ti (李述体)^{a b}

a Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
b Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, Guangzhou 510631, China

Received:2014-11-07 Revised:2015-02-02 Online:2015-07-05 Published:2015-07-05
Contact: Li Shu-Ti E-mail:lishuti@scnu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 51172079), the Science and Technology Program of Guangdong Province, China (Grant Nos. 2010B090400456 and 2010A081002002), the Science and Technology Program of Guangzhou, China (Grant No. 2011J4300018), and the Program for Changjiang Scholars and Innovative Research Team in Universities of China (Grant No. IRT13064).

摘要/Abstract

摘要： A theoretical study of polar and semi/non-polar InGaN/GaN light-emitting diodes (LEDs) with different internal surface polarization charges, which can be grown on Si substrates, is conducted by using APSYS software. In comparison with polar structure LEDs, the semi-polar structure exhibits a higher concentration of electrons and holes and radiative recombination rate, and its reduced built-in polarization field weakens the extent of band bending which causes the shift of peak emission wavelength. So the efficiency droop of semi-polar InGaN/GaN LEDs declines obviously and the optical power is significantly improved. In comparison with non-polar structure LEDs, although the concentration of holes and electrons as well as the radiative recombination rate of the semi-polar structure are better in the last two quantum wells (QWs) approaching the p-GaN side, the uniformity of distribution of carriers and radiative recombination rate for the non-polar structure is better. So the theoretical analysis indicates that the removal of the internal polarization field in the MQWs active regions for non-polar structure LEDs contributes to the uniform distribution of electrons and holes, and decreases the electron leakage. Thus it enhances the radiative recombination rate, and further improves the IQEs and optical powers, and shows the best photoelectric properties among these three structures.

关键词: semi/non-polar, InGaN/GaN LEDs, APSYS, Si substrate

Abstract: A theoretical study of polar and semi/non-polar InGaN/GaN light-emitting diodes (LEDs) with different internal surface polarization charges, which can be grown on Si substrates, is conducted by using APSYS software. In comparison with polar structure LEDs, the semi-polar structure exhibits a higher concentration of electrons and holes and radiative recombination rate, and its reduced built-in polarization field weakens the extent of band bending which causes the shift of peak emission wavelength. So the efficiency droop of semi-polar InGaN/GaN LEDs declines obviously and the optical power is significantly improved. In comparison with non-polar structure LEDs, although the concentration of holes and electrons as well as the radiative recombination rate of the semi-polar structure are better in the last two quantum wells (QWs) approaching the p-GaN side, the uniformity of distribution of carriers and radiative recombination rate for the non-polar structure is better. So the theoretical analysis indicates that the removal of the internal polarization field in the MQWs active regions for non-polar structure LEDs contributes to the uniform distribution of electrons and holes, and decreases the electron leakage. Thus it enhances the radiative recombination rate, and further improves the IQEs and optical powers, and shows the best photoelectric properties among these three structures.

Key words: semi/non-polar, InGaN/GaN LEDs, APSYS, Si substrate

中图分类号: (Theory, models, and numerical simulation)

78.20.Bh

73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 85.60.Jb (Light-emitting devices) 87.16.ad (Analytical theories)

于磊, 张苑文, 李凯, 皮辉, 刁家声, 王幸福, 胡文晓, 张崇臻, 宋伟东, 沈岳, 李述体. Theoretical analysis of semi/non-polar InGaN/GaN light-emitting diodes grown on silicon substrates[J]. 中国物理B, 2015, 24(7): 77801-077801.

Yu Lei (于磊), Zhang Yuan-Wen (张苑文), Li Kai (李凯), Pi Hui (皮辉), Diao Jia-Sheng (刁家声), Wang Xing-Fu (王幸福), Hu Wen-Xiao (胡文晓), Zhang Chong-Zhen (张崇臻), Song Wei-Dong (宋伟东), Shen Yue (沈岳), Li Shu-Ti (李述体). Theoretical analysis of semi/non-polar InGaN/GaN light-emitting diodes grown on silicon substrates[J]. Chin. Phys. B, 2015, 24(7): 77801-077801.

参考文献 27

[1]	Wang T, Bai J, Sakai S and Ho J K 2001 Appl. Phys. Lett. 78 2617
[2]	Zhuo X J, Zhang J, Li D W, Yi H X, Ren Z W, Tong J H, Wang X F, Chen X, Zhao B J, Wang W L and Li S T 2014 Chin. Phys. B 23 068502
[3]	Bernardini F, Fiorentini V and Vanderbilt D 1997 Phys. Rev. B 56 r10024
[4]	Rau B, Waltereit P, Brandt O, Ramsteiner M, Ploog K H, Puls J and Henneberger F 2000 Appl. Phys. Lett. 77 3343
[5]	Hisashi M, Mathew C S, Arpan C, Nakamura S and Steven P D 2006 Jpn. J. Appl. Phys. 45 7661
[6]	Jung S, Jung S, Chang Y, Bang K H, Kim H G, Choi Y H, Hwang S M and Baik K H 2012 Semicond. Sci. Tech. 27 024017
[7]	Zhou X W, Xu S R, Zhang J C, Dang J Y, Lv L, Hao Y and Guo L X 2012 Chin. Phys. B 21 67803
[8]	Zhao L B, Yu T J, Wu J J, Yang Z J and Zhang G Y 2010 Chin. Phys. B 19 18101
[9]	Ravash R, Ravash R, Dadgar A, Bertram F, Dempewolf A, Metzner S, Hempel T, Christen J and Krost A 2013 J. Cryst. Growth 370 288
[10]	Reuters B, Strate J, Hahn H, Finken M, Wille A, Heuken M, Kalisch H and Vescan A 2014 J. Cryst. Growth 391 33
[11]	Izyumskaya N, Liu S J, Avrutin V, Ni X F, Wu M, Özgür Ü, Metzner S, Bertram F, Christen J, Zhou L, Smith D J and Morkoç H 2011 J. Cryst. Growth 314 129
[12]	Gerbedoen J C, Soltani A, Joblot S, De Jaeger J C, Gaquiere C, Cordier Y and Semond F 2010 IEEE T. Electron Dev. 57 1497
[13]	Liu H H, Lin H Y, Liao C Z and Chyi J I 2013 ECS J. Solid State Sc. 2 N3001
[14]	Izyumskaya N, Zhang F, Okur S, Selden T and Avrutin V 2013 J. Appl. Phys. 114 113502
[15]	Chen G T, Chang S P, Chyi J I and Chang M N 2008 Appl. Phys. Lett. 92 241904
[16]	Chiu C H, Lin D W, Lin C C, Li Z Y, Chang W T, Hsu H W, Kuo H C, Lu T C, Wang S C, Liao W T, Tanikawa T, Honda Y, Yamaguchi M and Sawaki N 2011 Appl. Phys. Express 4 012105
[17]	Andreev Z, Römer F and Witzigmann B 2012 Phys. Status Solidi A 209 487
[18]	Lu T P, Li S T, Zhang K, Liu C, Xiao G W, Zhou Y G, Zheng S W, Yin Y A, Wu L J, Wang H L and Yang X D 2011 Chin. Phys. B 20 108504
[19]	Ling S C, Lu T C, Chang S P, Chen J R, Kuo H C and Wang S C 2010 Appl. Phys. Lett. 96 231101
[20]	Tong J H, Zhao B J, Wang X F, Chen X, Ren Z W, Li D W, Zhuo X J, Zhang J, Yi H X and Li S T 2013 Chin. Phys. B 22 068505
[21]	Fiorentini V, Bernardini F and Ambacher O 2002 Appl. Phys. Lett. 80 1204
[22]	Bernardini F and Fiorentini V 2001 Phys. Rev. B 64 085207
[23]	Song T L 2005 J. Appl. Phys. 98 084906
[24]	Feltin E, Beaumont B, Laügt M, de Mierry P, Vennégués P, Lahréche H, Leroux M and Gibart P 2001 Appl. Phys. Lett. 79 3230
[25]	Vurgaftman I, Meyer J R and Ram-Mohan L R 2001 J. Appl. Phys. 89 5815
[26]	Lu T P, Li S T, Zhang K, Liu C, Xiao G W, Zhou Y G, Zheng S W, Yin Y A, Wu L J, Wang H L and Yang X D 2011 Chin. Phys. B 20 098503
[27]	Daniel F F, James S S, Steven P D and Nakamura S 2013 J. Disp. Technol. 9 190

Theoretical analysis of semi/non-polar InGaN/GaN light-emitting diodes grown on silicon substrates

Theoretical analysis of semi/non-polar InGaN/GaN light-emitting diodes grown on silicon substrates

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 27

相关文章 6

Metrics

本文评价

推荐阅读 0

[1]	Zhen-Zhuo Zhang(张臻琢), Jing Yang(杨静), De-Gang Zhao(赵德刚), Feng Liang(梁锋), Ping Chen(陈平), and Zong-Shun Liu(刘宗顺). Influence of the lattice parameter of the AlN buffer layer on the stress state of GaN film grown on (111) Si[J]. 中国物理B, 2023, 32(2): 28101-028101.
[2]	张望, 韩伟华, 赵晓松, 吕奇峰, 季祥海, 杨涛, 杨富华. Horizontal InAs nanowire transistors grown on patterned silicon-on-insulator substrate[J]. 中国物理B, 2017, 26(8): 88101-088101.
[3]	秦萍, 宋伟东, 胡文晓, 张苑文, 张崇臻, 王汝鹏, 赵亮亮, 夏超, 袁松洋, 尹以安, 李述体, 宿世臣. Improved performance of near UV light-emitting diodes with a composition-graded p-AlGaN irregular sawtooth electron-blocking layer[J]. 中国物理B, 2016, 25(8): 88505-088505.
[4]	柳铭岗, 王云茜, 杨亿斌, 林秀其, 向鹏, 陈伟杰, 韩小标, 臧文杰, 廖强, 林佳利, 罗慧, 吴志盛, 刘扬, 张佰君. Performance improvement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with embedded wide p-electrodes[J]. 中国物理B, 2015, 24(3): 38503-038503.
[5]	陈依新, 沈光地, 郭伟玲, 高志远. AlGaInP–Si glue bonded high performance light emitting diodes[J]. 中国物理B, 2011, 20(8): 87203-087203.
[6]	刘喆, 王晓亮, 王军喜, 胡国新, 郭伦春, 李晋闽. The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si(111) substrates[J]. 中国物理B, 2007, 16(5): 1467-1471.