Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths

doi:10.1088/1674-1056/26/1/017805

中国物理B ›› 2017, Vol. 26 ›› Issue (1): 17805-017805.doi: 10.1088/1674-1056/26/1/017805

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths

Xiang Li(李翔), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Jing Yang(杨静), Ping Chen(陈平), Zong-Shun Liu(刘宗顺), Jian-Jun Zhu(朱建军), Wei Liu(刘炜), Xiao-Guang He(何晓光), Xiao-Jing Li(李晓静), Feng Liang(梁锋), Jian-Ping Liu(刘建平), Li-Qun Zhang(张立群), Hui Yang(杨辉), Yuan-Tao Zhang(张源涛), Guo-Tong Du(杜国同), Heng Long(龙衡), Mo Li(李沫)

1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2. University of Chinese Academy of Sciences, Beijing 100049, China;
3. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China;
4. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023, China;
5. Microsystem & Terahertz Research Center, Chinese Academy of Engineering Physics, Chengdu 610200, China

收稿日期:2016-05-13 修回日期:2016-10-09 出版日期:2017-01-05 发布日期:2017-01-05
通讯作者: De-Gang Zhao E-mail:dgzhao@red.semi.ac.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0401801), the National Natural Science Foundation of China (Grant Nos. 61674138, 61674139, 61604145, 61574135, 61574134, 61474142, 61474110, 61377020, and 61376089), Science Challenge Project, China (Grant No. JCKY2016212A503), and One Hundred Person Project of the Chinese Academy of Sciences.

Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths

Xiang Li(李翔)¹, De-Gang Zhao(赵德刚)^1,2, De-Sheng Jiang(江德生)¹, Jing Yang(杨静)¹, Ping Chen(陈平)¹, Zong-Shun Liu(刘宗顺)¹, Jian-Jun Zhu(朱建军)¹, Wei Liu(刘炜)¹, Xiao-Guang He(何晓光)¹, Xiao-Jing Li(李晓静)¹, Feng Liang(梁锋)¹, Jian-Ping Liu(刘建平)³, Li-Qun Zhang(张立群)³, Hui Yang(杨辉)^1,3, Yuan-Tao Zhang(张源涛)⁴, Guo-Tong Du(杜国同)⁴, Heng Long(龙衡)⁵, Mo Li(李沫)⁵

1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2. University of Chinese Academy of Sciences, Beijing 100049, China;
3. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China;
4. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023, China;
5. Microsystem & Terahertz Research Center, Chinese Academy of Engineering Physics, Chengdu 610200, China

Received:2016-05-13 Revised:2016-10-09 Online:2017-01-05 Published:2017-01-05
Contact: De-Gang Zhao E-mail:dgzhao@red.semi.ac.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0401801), the National Natural Science Foundation of China (Grant Nos. 61674138, 61674139, 61604145, 61574135, 61574134, 61474142, 61474110, 61377020, and 61376089), Science Challenge Project, China (Grant No. JCKY2016212A503), and One Hundred Person Project of the Chinese Academy of Sciences.

摘要/Abstract

摘要： Four blue-violet light emitting InGaN/GaN multiple quantum well (MQW) structures with different well widths are grown by metal-organic chemical vapor deposition. The carrier localization effect in these samples is investigated mainly by temperature-dependent photoluminescence measurements. It is found that the localization effect is enhanced as the well width increases from 1.8 nm to 3.6 nm in our experiments. The temperature induced PL peak blueshift and linewidth variation increase with increasing well width, implying that a greater amplitude of potential fluctuation as well as more localization states exist in wider wells. In addition, it is noted that the broadening of the PL spectra always occurs mainly on the low-energy side of the PL spectra due to the temperature-induced band-gap shrinkage, while in the case of the widest well, a large extension of the spectral curve also occurs in the high energy sides due to the existence of more shallow localized centers.

关键词: InGaN/GaN multiple quantum wells, localization effect, well thickness

Abstract: Four blue-violet light emitting InGaN/GaN multiple quantum well (MQW) structures with different well widths are grown by metal-organic chemical vapor deposition. The carrier localization effect in these samples is investigated mainly by temperature-dependent photoluminescence measurements. It is found that the localization effect is enhanced as the well width increases from 1.8 nm to 3.6 nm in our experiments. The temperature induced PL peak blueshift and linewidth variation increase with increasing well width, implying that a greater amplitude of potential fluctuation as well as more localization states exist in wider wells. In addition, it is noted that the broadening of the PL spectra always occurs mainly on the low-energy side of the PL spectra due to the temperature-induced band-gap shrinkage, while in the case of the widest well, a large extension of the spectral curve also occurs in the high energy sides due to the existence of more shallow localized centers.

Key words: InGaN/GaN multiple quantum wells, localization effect, well thickness

中图分类号: (III-V semiconductors)

78.66.Fd

78.67.De (Quantum wells) 85.60.Jb (Light-emitting devices) 78.60.Fi (Electroluminescence)

李翔, 赵德刚, 江德生, 杨静, 陈平, 刘宗顺, 朱建军, 刘炜, 何晓光, 李晓静, 梁锋, 刘建平, 张立群, 杨辉, 张源涛, 杜国同, 龙衡, 李沫. Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths[J]. 中国物理B, 2017, 26(1): 17805-017805.

参考文献 25

[1]	Ji P F, Liu N X, Wei X C, Liu Z, Lu H X, Wang J X and Li J M 2011 J. Semicond. 32 103001
[2]	Wang Q, Ji Z W, Wang F, Mu Q, Zheng Y J, Xu X G, Lu Y J and Feng Z H 2015 Chin. Phys. B 24 024219
[3]	Fu B L, Liu N X, Liu Z, Lu H X, Li J M and Wang J X 2014 J. Semicond. 35 114007
[4]	Li X, Liu Z S, Zhao D G, Jiang D S, Chen P, Zhu J J, Yang J, Le L C, Liu W, He X G, Li X J, Liang F, Zhang L Q, Liu J P and Yang H 2015 Appl. Opt. 54 8706
[5]	Ji X L, Yang F H, Wang J X, Duan R F, Ding K, Zeng Y P, Wang G H and Li J M 2010 J. Semicond. 31 094009
[6]	Sun Q, Yan W, Feng M X, Li Z C, Feng B, Zhao H M and Yang H 2016 J. Semicond. 37 044006
[7]	Cao K W, Fu B L, Liu Z, Zhao L X, Li J M and Wang J X 2016 J. Semicond. 37 014008
[8]	Ko T S, Lu T C, Wang T C, Chen J R, Gao R C, Lo M H, Kuo H C, Wang S C and Shen J L 2008 J. Appl. Phys. 104 093106
[9]	Liu W, Zhao D G, Jiang D S, Chen P, Liu Z S, Zhu J J, Shi M, Zhao D M, Li X, Liu J P, Zhang S M, Wang H and Yang H 2015 J. Alloys Compd. 625 266
[10]	Schomig H, Halm S, Forchel A and Bacher G 2004 Phys. Rev. Lett. 92 1506802
[11]	Narukawa Y, Kawakami Y, Fujita S, Fujita S and Nakamura S 1997 Phys. Rev. B 55 55
[12]	Na J H, Taylor R A and Lee K H 2006 Appl. Phys. Lett. 89 253120
[13]	Bai J, Wang T and Sakai S 2000 J. Appl. Phys. 88 4729
[14]	Zhao K, Yang X, Xu B, Li D, Wang C and Feng L 2016 J. Electron. Mater. 45 786
[15]	Wang T, Nakagawa D, Lachab M, Sugahara T and Sakai S 1999 Appl. Phys. Lett. 74 3128
[16]	Li Z, Kang J, Wang B W, Li H, Weng Y H, Lee Y C, Liu Z, Yi X, Feng Z C and Wang G 2014 J. Appl. Phys. 115 083112
[17]	Mohanta A, Wang S F, Young T F, Yeh P H, Ling D C, Lee M E and Jang D 2015 J. Appl. Phys. 117 144503
[18]	Hoffmann V, Mogilatenko A, Netzel C, Zeimer U, Einfeldt S, Weyers M and Kneissl M 2014 J. Cryst. Growth 391 46
[19]	Zhao D G, Jiang D S, Zhu J J, Wang H, Liu Z S, Zhang S M, Wang Y T, Jia Q J and Yang H 2010 J. Alloys Compd. 489 461
[20]	Wang H, Ji Z, Qu S, Wang G, Jiang Y, Liu B, Xu X and Mino H 2012 Opt. Express 20 3932
[21]	Langer T, Pietscher H G, Ketzer F A, Jonen H, Bremers H, Rossow U, Menzel D and Hangleiter A 2014 Phys. Rev. B 90 205302
[22]	Liu W, Zhao D G, Jiang D S, Chen P, Liu Z S, Zhu J J, Shi M, Zhao D M, Li X, Liu J P, Zhang S M, Wang H, Yang H, Zhang Y T and Du G T 2015 Opt. Express 23 15934
[23]	Eliseev P G, Perlin P, Lee J and Osiński M 1997 Appl. Phys. Lett. 71 569
[24]	Eliseev P G, Osinski M, Lee J, Sugahara T and Sakai S 2000 J. Electron. Mater. 29 332
[25]	Redaelli L, Mukhtarova A, Valdueza-Felip S, Ajay A, Bougerol C, Himwas C, Faure-Vincent J, Durand C, Eymery J and Monroy E 2014 Appl. Phys. Lett. 105 131105

Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths

Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 25

相关文章 4

Metrics

本文评价

推荐阅读 0

[1]	李长富, 时凯居, 徐明升, 徐现刚, 冀子武. Photoluminescence properties of blue and green multiple InGaN/GaN quantum wells[J]. 中国物理B, 2019, 28(10): 107803-107803.
[2]	刘炜, 赵德刚, 江德生, 陈平, 刘宗顺, 朱建军, 李翔, 梁锋, 刘建平, 杨辉. Variation of efficiency droop with quantum well thickness in InGaN/GaN green light-emitting diode[J]. 中国物理B, 2015, 24(12): 127801-127801.
[3]	梁明明, 翁国恩, 张江勇, 蔡晓梅, 吕雪芹, 应磊莹, 张保平. Influence of barrier thickness on the structural and optical properties of InGaN/GaN multiple quantum wells[J]. 中国物理B, 2014, 23(5): 54211-054211.
[4]	赵璧君, 陈鑫, 任志伟, 童金辉, 王幸福, 李丹伟, 卓祥景, 章俊, 易翰翔, 李述体. Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content[J]. 中国物理B, 2013, 22(8): 88401-088401.