中国物理B ›› 2017, Vol. 26 ›› Issue (12): 124210-124210.doi: 10.1088/1674-1056/26/12/124210

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇    下一篇

Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide

Feng Liang(梁锋), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Zong-Shun Liu(刘宗顺), Jian-Jun Zhu(朱建军), Ping Chen(陈平), Jing Yang(杨静), Wei Liu(刘炜), Shuang-Tao Liu(刘双韬), Yao Xing(邢瑶), Li-Qun Zhang(张立群), Wen-Jie Wang(王文杰), Mo Li(李沫), Yuan-Tao Zhang(张源涛), Guo-Tong Du(杜国同)   

  1. 1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China;
    2. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
    3. School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
    4. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;
    5. Microsystem & Terahertz Research Center, Chinese Academy of Engineering Physics, Chengdu 610200, China
  • 收稿日期:2017-08-03 修回日期:2017-08-31 出版日期:2017-12-05 发布日期:2017-12-05
  • 通讯作者: De-Gang Zhao E-mail:dgzhao@red.semi.ac.cn
  • 基金资助:

    Project supported by the National Key R & D Program of China (Grant Nos. 2016YFB0400803 and 2016YFB0401801), the National Natural Science Foundation of China (Grant Nos. 61674138, 61674139, 61604145, 61574135, 61574134, 61474142, 61474110, 61377020, and 61376089), the Science Challenge Project, China (Grant No. TZ2016003), and the Beijing Municipal Science and Technology Project, China (Grant No. Z161100002116037).

Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide

Feng Liang(梁锋)1,2, De-Gang Zhao(赵德刚)1,3, De-Sheng Jiang(江德生)1, Zong-Shun Liu(刘宗顺)1, Jian-Jun Zhu(朱建军)1, Ping Chen(陈平)1, Jing Yang(杨静)1, Wei Liu(刘炜)1, Shuang-Tao Liu(刘双韬)1, Yao Xing(邢瑶)1, Li-Qun Zhang(张立群)4, Wen-Jie Wang(王文杰)5, Mo Li(李沫)5, Yuan-Tao Zhang(张源涛)1, Guo-Tong Du(杜国同)1   

  1. 1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China;
    2. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
    3. School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
    4. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;
    5. Microsystem & Terahertz Research Center, Chinese Academy of Engineering Physics, Chengdu 610200, China
  • Received:2017-08-03 Revised:2017-08-31 Online:2017-12-05 Published:2017-12-05
  • Contact: De-Gang Zhao E-mail:dgzhao@red.semi.ac.cn
  • Supported by:

    Project supported by the National Key R & D Program of China (Grant Nos. 2016YFB0400803 and 2016YFB0401801), the National Natural Science Foundation of China (Grant Nos. 61674138, 61674139, 61604145, 61574135, 61574134, 61474142, 61474110, 61377020, and 61376089), the Science Challenge Project, China (Grant No. TZ2016003), and the Beijing Municipal Science and Technology Project, China (Grant No. Z161100002116037).

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摘要：

The upper waveguide (UWG) has direct influences on the optical and electrical characteristics of the violet laser diode (LD) by changing the optical field distribution or barrier of the electron blocking layer (EBL). In this study, a series of InGaN-based violet LDs with different UWGs are investigated systematically with LASTIP software. It is found that the output light power (OLP) under an injecting current of 120 mA or the threshold current (Ith) is deteriorated when the UWG is u-In0.02Ga0.98N/GaN or u-In0.02Ga0.98N/AlxGa1-xN (0 ≤ x ≤ 0.1), which should be attributed to small optical confinement factor (OCF) or severe electron leakage. Therefore, a new violet LD structure with u-In0.02Ga0.98N/GaN/Al0.05Ga0.95N multiple layer UWG is proposed to reduce the optical loss and increase the barrier of EBL. Finally, the output light power under an injecting current of 120 mA is improved to 176.4 mW.

关键词: InGaN-based violet LDs, u-InGaN/GaN/AlGaN multiple upper waveguide

Abstract:

The upper waveguide (UWG) has direct influences on the optical and electrical characteristics of the violet laser diode (LD) by changing the optical field distribution or barrier of the electron blocking layer (EBL). In this study, a series of InGaN-based violet LDs with different UWGs are investigated systematically with LASTIP software. It is found that the output light power (OLP) under an injecting current of 120 mA or the threshold current (Ith) is deteriorated when the UWG is u-In0.02Ga0.98N/GaN or u-In0.02Ga0.98N/AlxGa1-xN (0 ≤ x ≤ 0.1), which should be attributed to small optical confinement factor (OCF) or severe electron leakage. Therefore, a new violet LD structure with u-In0.02Ga0.98N/GaN/Al0.05Ga0.95N multiple layer UWG is proposed to reduce the optical loss and increase the barrier of EBL. Finally, the output light power under an injecting current of 120 mA is improved to 176.4 mW.

Key words: InGaN-based violet LDs, u-InGaN/GaN/AlGaN multiple upper waveguide

中图分类号:  (Semiconductor lasers; laser diodes)

  • 42.55.Px
42.82.Et (Waveguides, couplers, and arrays)