Variation of efficiency droop with quantum well thickness in InGaN/GaN green light-emitting diode

doi:10.1088/1674-1056/24/12/127801

中国物理B ›› 2015, Vol. 24 ›› Issue (12): 127801-127801.doi: 10.1088/1674-1056/24/12/127801

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Variation of efficiency droop with quantum well thickness in InGaN/GaN green light-emitting diode

刘炜^{a c}, 赵德刚^a, 江德生^a, 陈平^a, 刘宗顺^a, 朱建军^a, 李翔^a, 梁锋^a, 刘建平^b, 杨辉^{a b}

a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China;
c School of Electronic and Electrical Engineering, Chongqing University of Arts and Sciences, Chongqing 402160, China

收稿日期:2015-06-16 修回日期:2015-08-11 出版日期:2015-12-05 发布日期:2015-12-05
通讯作者: Zhao De-Gang E-mail:dgzhao@red.semi.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61574135, 61574134, 61474142, 61474110, 61377020, 61376089, 61223005, and 61321063), the One-Hundred Person Project of the Chinese Academy of Sciences, the Basic Research Project of Jiangsu Province, China (Grant No. BK20130362), the Scientific Research Fund of Chongqing Municipal Education Commission, China (Grant No. KJ131206), and the Natural Science Foundation of Chongqing Municipal Science and Technology Commission, China (Grant No. cstc2012jjA50036).

Variation of efficiency droop with quantum well thickness in InGaN/GaN green light-emitting diode

Liu Wei (刘炜)^{a c}, Zhao De-Gang (赵德刚)^a, Jiang De-Sheng (江德生)^a, Chen Ping (陈平)^a, Liu Zong-Shun (刘宗顺)^a, Zhu Jian-Jun (朱建军)^a, Li Xiang (李翔)^a, Liang Feng (梁锋)^a, Liu Jian-Ping (刘建平)^b, Yang Hui (杨辉)^{a b}

a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China;
c School of Electronic and Electrical Engineering, Chongqing University of Arts and Sciences, Chongqing 402160, China

Received:2015-06-16 Revised:2015-08-11 Online:2015-12-05 Published:2015-12-05
Contact: Zhao De-Gang E-mail:dgzhao@red.semi.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61574135, 61574134, 61474142, 61474110, 61377020, 61376089, 61223005, and 61321063), the One-Hundred Person Project of the Chinese Academy of Sciences, the Basic Research Project of Jiangsu Province, China (Grant No. BK20130362), the Scientific Research Fund of Chongqing Municipal Education Commission, China (Grant No. KJ131206), and the Natural Science Foundation of Chongqing Municipal Science and Technology Commission, China (Grant No. cstc2012jjA50036).

摘要/Abstract

摘要： InGaN/GaN multiple quantum well (MQW) green light-emitting diodes (LEDs) with varying InGaN quantum well layer thickness are fabricated and characterized. The investigation of luminescence efficiency versus injection current reveals that several physical mechanisms may jointly influence the efficiency droop, resulting in a non-monotonic variation of droop behavior with increasing quantum well (QW) thickness. When the QW is very thin, the increase of InGaN well layer thickness makes the efficiency droop more serious due to the enhancement of polarization effect. When the QW thickness increases further, however, the droop is alleviated significantly, which is mainly ascribed to the enhanced non-radiative recombination process and the weak delocalization effect.

关键词: InGaN/GaN multiple quantum wells, light-emitting diode, efficiency droop, well thickness

Abstract: InGaN/GaN multiple quantum well (MQW) green light-emitting diodes (LEDs) with varying InGaN quantum well layer thickness are fabricated and characterized. The investigation of luminescence efficiency versus injection current reveals that several physical mechanisms may jointly influence the efficiency droop, resulting in a non-monotonic variation of droop behavior with increasing quantum well (QW) thickness. When the QW is very thin, the increase of InGaN well layer thickness makes the efficiency droop more serious due to the enhancement of polarization effect. When the QW thickness increases further, however, the droop is alleviated significantly, which is mainly ascribed to the enhanced non-radiative recombination process and the weak delocalization effect.

Key words: InGaN/GaN multiple quantum wells, light-emitting diode, efficiency droop, well thickness

中图分类号: (III-V semiconductors)

78.66.Fd

78.67.De (Quantum wells) 85.60.Jb (Light-emitting devices) 78.60.Fi (Electroluminescence)

刘炜, 赵德刚, 江德生, 陈平, 刘宗顺, 朱建军, 李翔, 梁锋, 刘建平, 杨辉. Variation of efficiency droop with quantum well thickness in InGaN/GaN green light-emitting diode[J]. 中国物理B, 2015, 24(12): 127801-127801.

Liu Wei (刘炜), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Chen Ping (陈平), Liu Zong-Shun (刘宗顺), Zhu Jian-Jun (朱建军), Li Xiang (李翔), Liang Feng (梁锋), Liu Jian-Ping (刘建平), Yang Hui (杨辉). Variation of efficiency droop with quantum well thickness in InGaN/GaN green light-emitting diode[J]. Chin. Phys. B, 2015, 24(12): 127801-127801.

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Variation of efficiency droop with quantum well thickness in InGaN/GaN green light-emitting diode

Variation of efficiency droop with quantum well thickness in InGaN/GaN green light-emitting diode

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