Effects of prestrained InGaN interlayer on the emission properties of InGaN/GaN multiple quantum wells in a laser diode structure

doi:10.1088/1674-1056/22/7/076803

中国物理B ›› 2013, Vol. 22 ›› Issue (7): 76803-076803.doi: 10.1088/1674-1056/22/7/076803

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Effects of prestrained InGaN interlayer on the emission properties of InGaN/GaN multiple quantum wells in a laser diode structure

曹文彧, 贺永发, 陈钊, 杨薇, 杜为民, 胡晓东

State Key Laboratory for Artificial Microstructure and Mesoscopic Physics and School of Physics, Peking University, Beijing 100871, China

收稿日期:2013-03-02 修回日期:2013-03-29 出版日期:2013-06-01 发布日期:2013-06-01
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2012CB619304), the National Natural Science Foundation of China (Grant Nos. 61076013 and 51272008), and the Beijing Municipal Science and Technology Project, China (Grant No. H030430020000).

Effects of prestrained InGaN interlayer on the emission properties of InGaN/GaN multiple quantum wells in a laser diode structure

Cao Wen-Yu (曹文彧), He Yong-Fa (贺永发), Chen Zhao (陈钊), Yang Wei (杨薇), Du Wei-Min (杜为民), Hu Xiao-Dong (胡晓东)

State Key Laboratory for Artificial Microstructure and Mesoscopic Physics and School of Physics, Peking University, Beijing 100871, China

Received:2013-03-02 Revised:2013-03-29 Online:2013-06-01 Published:2013-06-01
Contact: Hu Xiao-Dong E-mail:huxd@pku.edu.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2012CB619304), the National Natural Science Foundation of China (Grant Nos. 61076013 and 51272008), and the Beijing Municipal Science and Technology Project, China (Grant No. H030430020000).

摘要/Abstract

摘要： The electroluminescence (EL) and photoluminescence (PL) spectra of InGaN/GaN multiple quantum wells (MQWs) with a prestrained InGaN interlayer in a laser diode structure are investigated. When the injection current increases from 5 mA to 50 mA, the blueshift of the EL emission peak is 1 meV for the prestrained sample and 23 meV for a control sample with the conventional structure. Also, the internal quantum efficiency and the EL intensity at the injection current of 20 mA are increased by 71% and 65% respectively by inserting the prestrained InGaN interlayer. The reduced blueshift and the enhanced emission are attributed mainly to the reduced quantum-confined Stark effect (QCSE) in the prestrained sample. Such attributions are supported by the theoretical simulation results, which reveal the smaller piezoelectric field and the enhanced overlap of electron and hole wave functions in the prestrained sample. Therefore, the prestrained InGaN interlayer contributes to strain relaxation in the MQW layer and enhancement of light emission due to the reduction of QCSE.

关键词: electroluminescence, quantum-confined Stark effect, InGaN/GaN quantum wells, laser diode

Abstract: The electroluminescence (EL) and photoluminescence (PL) spectra of InGaN/GaN multiple quantum wells (MQWs) with a prestrained InGaN interlayer in a laser diode structure are investigated. When the injection current increases from 5 mA to 50 mA, the blueshift of the EL emission peak is 1 meV for the prestrained sample and 23 meV for a control sample with the conventional structure. Also, the internal quantum efficiency and the EL intensity at the injection current of 20 mA are increased by 71% and 65% respectively by inserting the prestrained InGaN interlayer. The reduced blueshift and the enhanced emission are attributed mainly to the reduced quantum-confined Stark effect (QCSE) in the prestrained sample. Such attributions are supported by the theoretical simulation results, which reveal the smaller piezoelectric field and the enhanced overlap of electron and hole wave functions in the prestrained sample. Therefore, the prestrained InGaN interlayer contributes to strain relaxation in the MQW layer and enhancement of light emission due to the reduction of QCSE.

Key words: electroluminescence, quantum-confined Stark effect, InGaN/GaN quantum wells, laser diode

中图分类号: (Quantum wells)

68.65.Fg

61.72.uj (III-V and II-VI semiconductors) 42.55.Px (Semiconductor lasers; laser diodes)

曹文彧, 贺永发, 陈钊, 杨薇, 杜为民, 胡晓东. Effects of prestrained InGaN interlayer on the emission properties of InGaN/GaN multiple quantum wells in a laser diode structure[J]. 中国物理B, 2013, 22(7): 76803-076803.

Cao Wen-Yu (曹文彧), He Yong-Fa (贺永发), Chen Zhao (陈钊), Yang Wei (杨薇), Du Wei-Min (杜为民), Hu Xiao-Dong (胡晓东). Effects of prestrained InGaN interlayer on the emission properties of InGaN/GaN multiple quantum wells in a laser diode structure[J]. Chin. Phys. B, 2013, 22(7): 76803-076803.

参考文献 18

[1]	Nakamura S, Pearton S and Fasol G 2000 The Blue Laser Diode: The Complete Story (2nd edn.) (New York: Springer) pp. 3-20
[2]	Lu T C, Chen S W, Wu T T and Tu P M 2010 Appl. Phys. Lett. 97 071114
[3]	Lin C C and Lee C T 2010 IEEE Photon. Technol. Lett. 22 1291
[4]	Wang L, Zhao W, Hao Z B and Luo Y 2011 Chin. Phys. Lett. 28 078503
[5]	Chichibu S, Azuhata T, Sota T and Nakamura S 1996 Appl. Phys. Lett. 69 4188
[6]	Riblet P, Hirayama H, Kinoshita A, Hirata A, Sugano T and Aoyagi Y 1999 Appl. Phys. Lett. 75 2241
[7]	Perlin P, Kisielowski C, Iota V, Weinstein B A, Mattos L, Shapiro N A, Kruger J, Weber E R and Yang J 1998 Appl. Phys. Lett. 73 2778
[8]	Lu C M, Wang L, Lu J N, Li R, Liu L, Li D, Liu N Y, Li L, Cao W Y, Yang W, Chen W H, Du W M, Lee C T and Hu X D 2013 J. Appl. Phys. 113 013102
[9]	Huang C F, Liu T C, Lu Y C, Shiao W Y, Chen Y S, Wang J K, Lu C F and Yang C C 2008 J. Appl. Phys. 104 123106
[10]	Chen H S, Lu C F, Yeh D M, Huang C F, Huang J J and Yang C C 2006 IEEE Photon. Technol. Lett. 18 2269
[11]	Akasaka T, Gotoh H, Saito T and Makimoto T 2004 Appl. Phys. Lett. 85 3089
[12]	Kuroda T, Tackeuchi A and Sota T 2000 Appl. Phys. Lett. 76 3753
[13]	Perlin P, Kisielowski C, Iota V, Weinstein B A, Mattos L, Shapiro N A, Kruger J, Weber E R and Yang J 1998 Appl. Phys. Lett. 73 2778
[14]	Wang L, Li R, Yang Z W, Li D, Yu T, Liu N Y, Liu L, Zhang Y Y and Yao G R 2011 J. Appl. Phys. 110 093104
[15]	Chen W H and Hu X D 2009 Appl. Phys. Lett. 95 211104
[16]	Fiorentini V, Bernardini F and Ambacher O 2002 Appl. Phys. Lett. 80 1204
[17]	Yang W, Wu Y Y, Liu N Y, Liu L, Chen Z and Hu X D 2013 Chin. Phys. B 22 047801
[18]	Chen Z, Yang W, Liu L, Wan C H, Li L, He Y F, Liu N Y, Wang L, Li D, Chen W H and Hu X D 2012 Chin. Phys. B 21 108505

Effects of prestrained InGaN interlayer on the emission properties of InGaN/GaN multiple quantum wells in a laser diode structure

Effects of prestrained InGaN interlayer on the emission properties of InGaN/GaN multiple quantum wells in a laser diode structure

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