Intersubband transitions in InxAl(1-x)N/InyGa(1-y)Nquantum well operating at 1.55 μm

doi:10.1088/1674-1056/23/9/097304

›› 2014, Vol. 23 ›› Issue (9): 97304-097304.doi: 10.1088/1674-1056/23/9/097304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Intersubband transitions in In_xAl_(1-x)N/In_yGa_(1-y)Nquantum well operating at 1.55 μm

Hassen Dakhlaoui

Department of Physics, College of Science for Girls, Dammam 31113, Saudi Arabia

收稿日期:2014-01-27 修回日期:2014-03-31 出版日期:2014-09-15 发布日期:2014-09-15

Intersubband transitions in In_xAl_(1-x)N/In_yGa_(1-y)Nquantum well operating at 1.55 μm

Hassen Dakhlaoui

Department of Physics, College of Science for Girls, Dammam 31113, Saudi Arabia

Received:2014-01-27 Revised:2014-03-31 Online:2014-09-15 Published:2014-09-15
Contact: Hassen Dakhlaoui E-mail:h_dakhlaoui@yahoo.fr

摘要/Abstract

摘要： In this paper, we theoretically study the effects of doping concentration N_D and an external electric field on the intersubband transitions in In_xAl_(1-x)N/In_yGa_(1-y)N single quantum well by solving the Schrödinger and Poisson equations self-consistently. Obtained results including transition energies, the band structure, and the optical absorption have been discussed. The lowest three intersubband transitions (E₂-E₁), (E₃-E₁), and (E₃-E₂) are calculated as functions of doping concentration N_D. By increasing the doping concentration N_D, the depletion effect can be reduced, and the ionized electrons will compensate the internal electric field which results from the spontaneous polarization. Our results show that an optimum concentration N_D exists for which the transition 0.8 eV (1.55 μm) is carried out. Finally, the dependence of the optical absorption α ₁₃ (ω) on the external electric field and doping concentration is studied. The maximum of the optical absorption can be red-shifted or blue-shifted through varying the doping concentration and the external electric field. The obtained results can be used for designing optical fiber telecommunications operating at 1.55 μm.

关键词: intersubband transition, delta doping, InGaN/GaN quantum well

Abstract: In this paper, we theoretically study the effects of doping concentration N_D and an external electric field on the intersubband transitions in In_xAl_(1-x)N/In_yGa_(1-y)N single quantum well by solving the Schrödinger and Poisson equations self-consistently. Obtained results including transition energies, the band structure, and the optical absorption have been discussed. The lowest three intersubband transitions (E₂-E₁), (E₃-E₁), and (E₃-E₂) are calculated as functions of doping concentration N_D. By increasing the doping concentration N_D, the depletion effect can be reduced, and the ionized electrons will compensate the internal electric field which results from the spontaneous polarization. Our results show that an optimum concentration N_D exists for which the transition 0.8 eV (1.55 μm) is carried out. Finally, the dependence of the optical absorption α ₁₃ (ω) on the external electric field and doping concentration is studied. The maximum of the optical absorption can be red-shifted or blue-shifted through varying the doping concentration and the external electric field. The obtained results can be used for designing optical fiber telecommunications operating at 1.55 μm.

Key words: intersubband transition, delta doping, InGaN/GaN quantum well

中图分类号: (Quantum wells)

73.21.Fg

73.50.Dn (Low-field transport and mobility; piezoresistance) 73.50.Dn (Low-field transport and mobility; piezoresistance)

Hassen Dakhlaoui. Intersubband transitions in In_xAl_(1-x)N/In_yGa_(1-y)Nquantum well operating at 1.55 μm[J]. , 2014, 23(9): 97304-097304.

Hassen Dakhlaoui. Intersubband transitions in In_xAl_(1-x)N/In_yGa_(1-y)Nquantum well operating at 1.55 μm[J]. Chin. Phys. B, 2014, 23(9): 97304-097304.

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Intersubband transitions in In_xAl_(1-x)N/In_yGa_(1-y)Nquantum well operating at 1.55 μm

Intersubband transitions in In_xAl_(1-x)N/In_yGa_(1-y)Nquantum well operating at 1.55 μm

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