中国物理B ›› 2014, Vol. 23 ›› Issue (5): 54211-054211.doi: 10.1088/1674-1056/23/5/054211
• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇 下一篇
梁明明a b, 翁国恩a b, 张江勇c, 蔡晓梅a b, 吕雪芹b, 应磊莹c, 张保平a c
Liang Ming-Ming (梁明明)a b, Weng Guo-En (翁国恩)a b, Zhang Jiang-Yong (张江勇)c, Cai Xiao-Mei (蔡晓梅)a b, Lü Xue-Qin (吕雪芹)b, Ying Lei-Ying (应磊莹)c, Zhang Bao-Ping (张保平)a c
摘要: The structural and optical properties of InGaN/GaN multiple quantum wells (MQWs) with different barrier thicknesses are studied by means of high resolution X-ray diffraction (HRXRD), a cross-sectional transmission electron microscope (TEM), and temperature-dependent photoluminescence (PL) measurements. HRXRD and cross-sectional TEM measurements show that the interfaces between wells and barriers are abrupt and the entire MQW region has good periodicity for all three samples. As the barrier thickness is increased, the temperature of the turning point from blueshift to redshift of the S-shaped temperature-dependent PL peak energy increases monotonously, which indicates that the localization potentials due to In-rich clusters is deeper. From the Arrhenius plot of the normalized integrated PL intensity, it is found that there are two kinds of nonradiative recombination processes accounting for the thermal quenching of photoluminescence, and the corresponding activation energy (or the localization potential) increases with the increase of the barrier thickness. The dependence on barrier thickness is attributed to the redistribution of In-rich clusters during the growth of barrier layers, i.e., clusters with lower In contents aggregate into clusters with higher In contents.
中图分类号: (Optical materials)