Efficiency droop in InGaN/GaN-based LEDs with a gradually varying In composition in each InGaN well layer

doi:10.1088/1674-1056/ac0817

中国物理B ›› 2022, Vol. 31 ›› Issue (1): 17801-017801.doi: 10.1088/1674-1056/ac0817

Efficiency droop in InGaN/GaN-based LEDs with a gradually varying In composition in each InGaN well layer

Shang-Da Qu(屈尚达)¹, Ming-Sheng Xu(徐明升)¹, Cheng-Xin Wang(王成新)², Kai-Ju Shi(时凯居)¹, Rui Li(李睿)¹, Ye-Hui Wei(魏烨辉)¹, Xian-Gang Xu(徐现刚)¹, and Zi-Wu Ji(冀子武)^1,†

1 School of Microelectronics, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China;
2 Shandong Inspur Huaguang Optoelectronics Co., Ltd., Weifang 261061, China

收稿日期:2021-04-08 修回日期:2021-05-21 接受日期:2021-06-04 出版日期:2021-12-03 发布日期:2021-12-18
通讯作者: Zi-Wu Ji E-mail:jiziwu@sdu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51872167 and 51672163) and the Major Science and Technology Innovation Project of Shandong Province, China (Grant No. 2019JZZY010210).

Efficiency droop in InGaN/GaN-based LEDs with a gradually varying In composition in each InGaN well layer

1 School of Microelectronics, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China;
2 Shandong Inspur Huaguang Optoelectronics Co., Ltd., Weifang 261061, China

Received:2021-04-08 Revised:2021-05-21 Accepted:2021-06-04 Online:2021-12-03 Published:2021-12-18
Contact: Zi-Wu Ji E-mail:jiziwu@sdu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51872167 and 51672163) and the Major Science and Technology Innovation Project of Shandong Province, China (Grant No. 2019JZZY010210).

摘要/Abstract

摘要： Temperature-dependent and driving current-dependent electroluminescence spectra of two different InGaN/GaN multiple quantum well structures SA and SB are investigated, with the In composition in each well layer (WL) along the growth direction progressively increasing for SA and progressively decreasing for SB. The results show that SB exhibits an improved efficiency droop compared with SA. This phenomenon can be explained as follows: owing to the difference in growth pattern of the WL between these two samples, the terminal region of the WL in SB contains fewer In atoms than in SA, and therefore the former undergoes less In volatilization than the latter during the waiting period required for warming-up due to the difference in the growth temperature between well and barrier layers. This results in SB having a deeper triangular-shaped potential well in its WL than SA, which strongly confines the carriers to the initial region of the WL to prevent them from leaking to the p-GaN side, thus improving the efficiency droop. Moreover, the improvement in the efficiency droop for SB is also partly attributed to its stronger Coulomb screening effect and carrier localization effect.

关键词: InGaN/GaN, asymmetric triangular multiple quantum wells, structural and electroluminescence properties, efficiency droop

Abstract: Temperature-dependent and driving current-dependent electroluminescence spectra of two different InGaN/GaN multiple quantum well structures SA and SB are investigated, with the In composition in each well layer (WL) along the growth direction progressively increasing for SA and progressively decreasing for SB. The results show that SB exhibits an improved efficiency droop compared with SA. This phenomenon can be explained as follows: owing to the difference in growth pattern of the WL between these two samples, the terminal region of the WL in SB contains fewer In atoms than in SA, and therefore the former undergoes less In volatilization than the latter during the waiting period required for warming-up due to the difference in the growth temperature between well and barrier layers. This results in SB having a deeper triangular-shaped potential well in its WL than SA, which strongly confines the carriers to the initial region of the WL to prevent them from leaking to the p-GaN side, thus improving the efficiency droop. Moreover, the improvement in the efficiency droop for SB is also partly attributed to its stronger Coulomb screening effect and carrier localization effect.

Key words: InGaN/GaN, asymmetric triangular multiple quantum wells, structural and electroluminescence properties, efficiency droop

中图分类号: (III-V semiconductors)

78.66.Fd

78.67.De (Quantum wells) 78.60.Fi (Electroluminescence) 42.60.Lh (Efficiency, stability, gain, and other operational parameters)

Shang-Da Qu(屈尚达), Ming-Sheng Xu(徐明升), Cheng-Xin Wang(王成新), Kai-Ju Shi(时凯居), Rui Li(李睿), Ye-Hui Wei(魏烨辉), Xian-Gang Xu(徐现刚), and Zi-Wu Ji(冀子武). Efficiency droop in InGaN/GaN-based LEDs with a gradually varying In composition in each InGaN well layer[J]. 中国物理B, 2022, 31(1): 17801-017801.

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Efficiency droop in InGaN/GaN-based LEDs with a gradually varying In composition in each InGaN well layer

Efficiency droop in InGaN/GaN-based LEDs with a gradually varying In composition in each InGaN well layer

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