Investigation of flux dependent sensitivity on single event effect in memory devices

doi:10.1088/1674-1056/27/7/076101

中国物理B ›› 2018, Vol. 27 ›› Issue (7): 76101-076101.doi: 10.1088/1674-1056/27/7/076101

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Investigation of flux dependent sensitivity on single event effect in memory devices

1 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;
2 School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000, China;
3 University of Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2018-01-02 修回日期:2018-03-23 出版日期:2018-07-05 发布日期:2018-07-05
通讯作者: Jie Liu E-mail:j.liu@impcas.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. U1532261, 11690041, and 11675233).

Investigation of flux dependent sensitivity on single event effect in memory devices

Jie Luo(罗捷)^1,2,3, Tie-shan Wang(王铁山)², Dong-qing Li(李东青)¹, Tian-qi Liu(刘天奇)¹, Ming-dong Hou(侯明东)¹, You-mei Sun(孙友梅)¹, Jing-lai Duan(段敬来)¹, Hui-jun Yao(姚会军)¹, Kai Xi(习凯)¹, Bing Ye(叶兵)¹, Jie Liu(刘杰)¹

1 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;
2 School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000, China;
3 University of Chinese Academy of Sciences, Beijing 100049, China

Received:2018-01-02 Revised:2018-03-23 Online:2018-07-05 Published:2018-07-05
Contact: Jie Liu E-mail:j.liu@impcas.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. U1532261, 11690041, and 11675233).

摘要/Abstract

摘要： Heavy-ion flux is an important experimental parameter in the ground based single event tests. The flux impact on a single event effect in different memory devices is analyzed by using GEANT4 and TCAD simulation methods. The transient radial track profile depends not only on the linear energy transfer (LET) of the incident ion, but also on the mass and energy of the ion. For the ions with the energies at the Bragg peaks, the radial charge distribution is wider when the ion LET is larger. The results extracted from the GEANT4 and TCAD simulations, together with detailed analysis of the device structure, are presented to demonstrate phenomena observed in the flux related experiment. The analysis shows that the flux effect conclusions drawn from the experiment are intrinsically connected and all indicate the mechanism that the flux effect stems from multiple ion-induced pulses functioning together and relies exquisitely on the specific response of the device.

关键词: ion flux, single event effect, GEANT4 simulation, memory device

Abstract: Heavy-ion flux is an important experimental parameter in the ground based single event tests. The flux impact on a single event effect in different memory devices is analyzed by using GEANT4 and TCAD simulation methods. The transient radial track profile depends not only on the linear energy transfer (LET) of the incident ion, but also on the mass and energy of the ion. For the ions with the energies at the Bragg peaks, the radial charge distribution is wider when the ion LET is larger. The results extracted from the GEANT4 and TCAD simulations, together with detailed analysis of the device structure, are presented to demonstrate phenomena observed in the flux related experiment. The analysis shows that the flux effect conclusions drawn from the experiment are intrinsically connected and all indicate the mechanism that the flux effect stems from multiple ion-induced pulses functioning together and relies exquisitely on the specific response of the device.

Key words: ion flux, single event effect, GEANT4 simulation, memory device

中图分类号: (Semiconductors)

61.82.Fk

95.75.-z (Observation and data reduction techniques; computer modeling and simulation) 24.10.Lx (Monte Carlo simulations (including hadron and parton cascades and string breaking models))

罗捷, 王铁山, 李东青, 刘天奇, 侯明东, 孙友梅, 段敬来, 姚会军, 习凯, 叶兵, 刘杰. Investigation of flux dependent sensitivity on single event effect in memory devices[J]. 中国物理B, 2018, 27(7): 76101-076101.

Jie Luo(罗捷), Tie-shan Wang(王铁山), Dong-qing Li(李东青), Tian-qi Liu(刘天奇), Ming-dong Hou(侯明东), You-mei Sun(孙友梅), Jing-lai Duan(段敬来), Hui-jun Yao(姚会军), Kai Xi(习凯), Bing Ye(叶兵), Jie Liu(刘杰). Investigation of flux dependent sensitivity on single event effect in memory devices[J]. Chin. Phys. B, 2018, 27(7): 76101-076101.

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Investigation of flux dependent sensitivity on single event effect in memory devices

Investigation of flux dependent sensitivity on single event effect in memory devices

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