中国物理B ›› 2014, Vol. 23 ›› Issue (4): 46104-046104.doi: 10.1088/1674-1056/23/4/046104
• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇 下一篇
燕少安a, 唐明华a, 赵雯b, 郭红霞b, 张万里a, 徐新宇a, 王旭东a, 丁浩a, 陈建伟a, 李正c, 周益春a
Yan Shao-An (燕少安)a, Tang Ming-Hua (唐明华)a, Zhao Wen (赵雯)b, Guo Hong-Xia (郭红霞)b, Zhang Wan-Li (张万里)a, Xu Xin-Yu (徐新宇)a, Wang Xu-Dong (王旭东)a, Ding Hao (丁浩)a, Chen Jian-Wei (陈建伟)a, Li Zheng (李正)c, Zhou Yi-Chun (周益春)a
摘要: The single event effect in ferroelectric-gate field-effect transistor (FeFET) under heavy ion irradiation is investigated in this paper. The simulation results show that the transient responses are much lower in a FeFET than in a conventional metal-oxide-semiconductor field-effect transistor (MOSFET) when the ion strikes the channel. The main reason is that the polarization-induced charges (the polarization direction here is away from the silicon surface) bring a negative surface potential which will affect the distribution of carriers and charge collection in different electrodes significantly. The simulation results are expected to explain that the FeFET has a relatively good immunity to single event effect.
中图分类号: (Atom and molecule irradiation effects)