›› 2015, Vol. 24 ›› Issue (3): 37101-037101.doi: 10.1088/1674-1056/24/3/037101

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Dynamic resistive switching in a three-terminal device based on phase separated manganites

王志强b a, 颜志波a, 秦明辉b, 高兴森b, 刘俊明a   

  1. a Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China;
    b Institute for Advanced Materials and Laboratory for Quantum Engineering and Materials, South China Normal University, Guangzhou 510006, China
  • 收稿日期:2014-06-04 修回日期:2014-10-10 出版日期:2015-03-05 发布日期:2015-03-05
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No. 2011CB922101), the National Natural Science Foundation of China (Grant Nos. 51301084 and 11234005), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20130576), and Program for Changjiang Scholars and Innovative Research Team in University, China (Grant No. IRT1243).

Dynamic resistive switching in a three-terminal device based on phase separated manganites

Wang Zhi-Qiang (王志强)b a, Yan Zhi-Bo (颜志波)a, Qin Ming-Hui (秦明辉)b, Gao Xing-Sen (高兴森)b, Liu Jun-Ming (刘俊明)a   

  1. a Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China;
    b Institute for Advanced Materials and Laboratory for Quantum Engineering and Materials, South China Normal University, Guangzhou 510006, China
  • Received:2014-06-04 Revised:2014-10-10 Online:2015-03-05 Published:2015-03-05
  • Contact: Yan Zhi-Bo, Liu Jun-Ming E-mail:zbyan@nju.edu.cn;liujm@nju.edu.cn
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No. 2011CB922101), the National Natural Science Foundation of China (Grant Nos. 51301084 and 11234005), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20130576), and Program for Changjiang Scholars and Innovative Research Team in University, China (Grant No. IRT1243).

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摘要： A three-terminal device based on electronic phase separated manganites is suggested to produce high performance resistive switching. Our Monte Carlo simulations reveal that the conductive filaments can be formed/annihilated by reshaping the ferromagnetic metal phase domains with two cross-oriented switching voltages. Besides, by controlling the high resistance state (HRS) to a stable state that just after the filament is ruptured, the resistive switching remains stable and reversible, while the switching voltage and the switching time can be greatly reduced.

关键词: phase separation, dielectrophoresis, resistive switching, memory device

Abstract: A three-terminal device based on electronic phase separated manganites is suggested to produce high performance resistive switching. Our Monte Carlo simulations reveal that the conductive filaments can be formed/annihilated by reshaping the ferromagnetic metal phase domains with two cross-oriented switching voltages. Besides, by controlling the high resistance state (HRS) to a stable state that just after the filament is ruptured, the resistive switching remains stable and reversible, while the switching voltage and the switching time can be greatly reduced.

Key words: phase separation, dielectrophoresis, resistive switching, memory device

中图分类号:  (Metal-insulator transitions and other electronic transitions)

  • 71.30.+h
82.45.Un (Dielectric materials in electrochemistry) 81.30.Mh (Solid-phase precipitation)