Large energy-loss straggling of swift heavy ions in ultra-thin active silicon layers

doi:10.1088/1674-1056/22/9/096103

中国物理B ›› 2013, Vol. 22 ›› Issue (9): 96103-096103.doi: 10.1088/1674-1056/22/9/096103

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Large energy-loss straggling of swift heavy ions in ultra-thin active silicon layers

张战刚^{a b}, 刘杰^a, 侯明东^a, 孙友梅^a, 赵发展^c, 刘刚^c, 韩郑生^c, 耿超^{a b}, 刘建德^a, 习凯^{a b}, 段敬来^a, 姚会军^a, 莫丹^a, 罗捷^{a b}, 古松^{a b}, 刘天奇^{a b}

a Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;
b University of Chinese Academy of Sciences, Beijing 100049, China;
c Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

收稿日期:2013-01-16 修回日期:2013-04-03 出版日期:2013-07-26 发布日期:2013-07-26
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11179003 and 10975164).

Large energy-loss straggling of swift heavy ions in ultra-thin active silicon layers

Zhang Zhan-Gang (张战刚)^{a b}, Liu Jie (刘杰)^a, Hou Ming-Dong (侯明东)^a, Sun You-Mei (孙友梅)^a, Zhao Fa-Zhan (赵发展)^c, Liu Gang (刘刚)^c, Han Zheng-Sheng (韩郑生)^c, Geng Chao (耿超)^{a b}, Liu Jian-De (刘建德)^a, Xi Kai (习凯)^{a b}, Duan Jing-Lai (段敬来)^a, Yao Hui-Jun (姚会军)^a, Mo Dan (莫丹)^a, Luo Jie (罗捷)^{a b}, Gu Song (古松)^{a b}, Liu Tian-Qi (刘天奇)^{a b}

a Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;
b University of Chinese Academy of Sciences, Beijing 100049, China;
c Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Received:2013-01-16 Revised:2013-04-03 Online:2013-07-26 Published:2013-07-26
Contact: Zhang Zhan-Gang, Liu Jie E-mail:zhangang@impcas.ac.cn; j.liu@impcas.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11179003 and 10975164).

摘要/Abstract

摘要： Monte Carlo simulations reveal considerable straggling of energy loss by the same ions with the same energy in fully-depleted silicon-on-insulator (FDSOI) devices with ultra-thin sensitive silicon layers down to 2.5 nm. The absolute straggling of deposited energy decreases with decreasing thickness of the active silicon layer. While the relative straggling increases gradually with decreasing thickness of silicon films and exhibits a sharp rise as the thickness of the silicon film descends below a threshold value of 50 nm, with the dispersion of deposited energy ascending above±10%. Ion species and energy dependence of the energy-loss straggling are also investigated. For a given beam, the dispersion of deposited energy results in large uncertainty on the actual linear energy transfer (LET) of incident ions, and thus single event effect (SEE) responses, which pose great challenges for traditional error rate prediction methods.

关键词: single event effects, energy-loss straggling, ultra-thin silicon layer, Monte Carlo simulation

Abstract: Monte Carlo simulations reveal considerable straggling of energy loss by the same ions with the same energy in fully-depleted silicon-on-insulator (FDSOI) devices with ultra-thin sensitive silicon layers down to 2.5 nm. The absolute straggling of deposited energy decreases with decreasing thickness of the active silicon layer. While the relative straggling increases gradually with decreasing thickness of silicon films and exhibits a sharp rise as the thickness of the silicon film descends below a threshold value of 50 nm, with the dispersion of deposited energy ascending above±10%. Ion species and energy dependence of the energy-loss straggling are also investigated. For a given beam, the dispersion of deposited energy results in large uncertainty on the actual linear energy transfer (LET) of incident ions, and thus single event effect (SEE) responses, which pose great challenges for traditional error rate prediction methods.

Key words: single event effects, energy-loss straggling, ultra-thin silicon layer, Monte Carlo simulation

中图分类号: (Semiconductors)

61.82.Fk

02.50.Ng (Distribution theory and Monte Carlo studies) 61.80.Jh (Ion radiation effects)

张战刚, 刘杰, 侯明东, 孙友梅, 赵发展, 刘刚, 韩郑生, 耿超, 刘建德, 习凯, 段敬来, 姚会军, 莫丹, 罗捷, 古松, 刘天奇. Large energy-loss straggling of swift heavy ions in ultra-thin active silicon layers[J]. 中国物理B, 2013, 22(9): 96103-096103.

Zhang Zhan-Gang (张战刚), Liu Jie (刘杰), Hou Ming-Dong (侯明东), Sun You-Mei (孙友梅), Zhao Fa-Zhan (赵发展), Liu Gang (刘刚), Han Zheng-Sheng (韩郑生), Geng Chao (耿超), Liu Jian-De (刘建德), Xi Kai (习凯), Duan Jing-Lai (段敬来), Yao Hui-Jun (姚会军), Mo Dan (莫丹), Luo Jie (罗捷), Gu Song (古松), Liu Tian-Qi (刘天奇). Large energy-loss straggling of swift heavy ions in ultra-thin active silicon layers[J]. Chin. Phys. B, 2013, 22(9): 96103-096103.

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Large energy-loss straggling of swift heavy ions in ultra-thin active silicon layers

Large energy-loss straggling of swift heavy ions in ultra-thin active silicon layers

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