关键词: single event effect, total ionizing dose effect, FG ROM, SRAM

Abstract: Radiation effects of the floating gate read-only-memory (FG ROM) and the static random access memory (SRAM) have been evaluated using the 14 MeV neutron and 31.9MeV proton beams and Co-60 $\gamma $-rays. The neutron fluence, when the first error occurs in the FG ROMs, is at least 5 orders of magnitude higher than that in the SRAMs, and the proton fluence, 4 orders of magnitude higher. The total dose threshold for Co-60 $\gamma $-ray irradiation is about 10$^{4}$ rad (Si) for both memories. The difference and similarity are attributed to the structure of the memory cells and the mechanism of radiation effects. It is concluded that the FG ROMs are more reliable as semiconductor memories for storing data than the SRAMs, when they are used in the satellites or space crafts exposed to high energy particle radiation.

Key words: single event effect, total ionizing dose effect, FG ROM, SRAM