Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment

doi:10.1088/1674-1056/24/8/088502

中国物理B ›› 2015, Vol. 24 ›› Issue (8): 88502-088502.doi: 10.1088/1674-1056/24/8/088502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment

李培^{a b}, 郭红霞^{a b c}, 郭旗^{a b}, 张晋新^d, 肖尧^c, 魏莹^{a b}, 崔江维^{a b}, 文林^{a b}, 刘默寒^{a b}, 王信^{a b}

a Key Laboratory of Functional Materials and Devices for Special Environments of Chinese Academy of Sciences, Xinjiang Key Laboratory of Electronic Information Materials and Devices; Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;
b University of Chinese Academy of Sciences, Beijing 100049, China;
c Northwest Institution of Nuclear Technology, Xi' an 710024, China;
d School of Science, Xi'an Jiaotong University, Xi' an 710049, China

收稿日期:2015-01-29 修回日期:2015-03-21 出版日期:2015-08-05 发布日期:2015-08-05
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61274106).

Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment

Li Pei (李培)^{a b}, Guo Hong-Xia (郭红霞)^{a b c}, Guo Qi (郭旗)^{a b}, Zhang Jin-Xin (张晋新)^d, Xiao Yao (肖尧)^c, Wei Ying (魏莹)^{a b}, Cui Jiang-Wei (崔江维)^{a b}, Wen Lin (文林)^{a b}, Liu Mo-Han (刘默寒)^{a b}, Wang Xin (王信)^{a b}

a Key Laboratory of Functional Materials and Devices for Special Environments of Chinese Academy of Sciences, Xinjiang Key Laboratory of Electronic Information Materials and Devices; Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;
b University of Chinese Academy of Sciences, Beijing 100049, China;
c Northwest Institution of Nuclear Technology, Xi' an 710024, China;
d School of Science, Xi'an Jiaotong University, Xi' an 710049, China

Received:2015-01-29 Revised:2015-03-21 Online:2015-08-05 Published:2015-08-05
Contact: Guo Hong-Xia E-mail:guohxnint@126.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61274106).

摘要/Abstract

摘要： In this paper the single-event responses of the silicon germanium heterojunction bipolar transistors (SiGe HBTs) are investigated by TCAD simulations and laser microbeam experiment. A three-dimensional (3D) simulation model is established, the single event effect (SEE) simulation is further carried out on the basis of SiGe HBT devices, and then, together with the laser microbeam test, the charge collection behaviors are analyzed, including the single event transient (SET) induced transient terminal currents, and the sensitive area of SEE charge collection. The simulations and experimental results are discussed in detail and it is demonstrated that the nature of the current transient is controlled by the behaviors of the collector–substrate (C/S) junction and charge collection by sensitive electrodes, thereby giving out the sensitive area and electrode of SiGe HBT in SEE.

关键词: SiGe heterojunction bipolar transistor, single event effect, three-dimensional numerical simulation, laser microbeam experiment

Abstract: In this paper the single-event responses of the silicon germanium heterojunction bipolar transistors (SiGe HBTs) are investigated by TCAD simulations and laser microbeam experiment. A three-dimensional (3D) simulation model is established, the single event effect (SEE) simulation is further carried out on the basis of SiGe HBT devices, and then, together with the laser microbeam test, the charge collection behaviors are analyzed, including the single event transient (SET) induced transient terminal currents, and the sensitive area of SEE charge collection. The simulations and experimental results are discussed in detail and it is demonstrated that the nature of the current transient is controlled by the behaviors of the collector–substrate (C/S) junction and charge collection by sensitive electrodes, thereby giving out the sensitive area and electrode of SiGe HBT in SEE.

Key words: SiGe heterojunction bipolar transistor, single event effect, three-dimensional numerical simulation, laser microbeam experiment

中图分类号: (Bipolar transistors)

85.30.Pq

61.80.Az (Theory and models of radiation effects) 73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 61.80.-x (Physical radiation effects, radiation damage)

李培, 郭红霞, 郭旗, 张晋新, 肖尧, 魏莹, 崔江维, 文林, 刘默寒, 王信. Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment[J]. 中国物理B, 2015, 24(8): 88502-088502.

Li Pei (李培), Guo Hong-Xia (郭红霞), Guo Qi (郭旗), Zhang Jin-Xin (张晋新), Xiao Yao (肖尧), Wei Ying (魏莹), Cui Jiang-Wei (崔江维), Wen Lin (文林), Liu Mo-Han (刘默寒), Wang Xin (王信). Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment[J]. Chin. Phys. B, 2015, 24(8): 88502-088502.

参考文献 19

[1]	Cressler J D 2013 IEEE Trans. Nucl. Sci. 60 1992
[2]	Cressler J D 2005 Proceedings of the IEEE, August 26, Albuquerque, USA, P1559
[3]	Wei-Min L K, Krithivasan R, Xiangtao Li, Yuan Lu, Cressler J D, Gustat H and Heinemann B 2006 IEEE Microwave and Wireless Computer Letters 16 520
[4]	Duerr W, Menzel W and Schumacher H 1997 IEEE Microwave and Guided Wave Letters 7 63
[5]	Cressler J D and Niu G F 2003 Silicon-germanium heterojunction bipolar transistors (Norwood: Artech House) pp. 95–182
[6]	Babcock J A, Cressler J D, Vempati L S, Clark S D, Jaeger R C and Harame D L 1995 IEEE Trans. Nucl. Sci. 42 1558
[7]	Lu Y, Cressler J D, Krithivasan R, Li Y, Reed R A, Marshall P W, Polar C, Freeman G and Ahlgren D 2003 IEEE Trans. Nucl. Sci. 50 1811
[8]	Sutton A K, Haugerud B M, Prakash A P G, Jun B, Cressler J D, Marshall C J, Marshall P W, Ladbury R and Joseph A J 2005 IEEE Trans. Nucl. Sci. 52 2358
[9]	Sutton A K, Prakash A P G, Jun B, Enhai Zhao, Bellini M, Pellish J, Diestelhorst R M, Carts M A, Phan A, Ladbury R, Cressler J D, Marshall P W, Marshall C J, Reed R A, Schrimpf R D and Fleetwood D M 2006 IEEE Trans. Nucl. Sci. 53 3166
[10]	Krithivasan R, Niu G F, Cressler J D, Currie S M, Fritz K E, Reed R A, Marshall P W, Riggs P A, Randall B A and Gilbert B 2003 IEEE Trans. Nucl. Sci. 50 2126
[11]	Krithivasan R, Marshall P W, Nayeem M, Sutton A K, Wei-Min Kuo, Haugerud B M, Najafizadeh L, Cressler J D, Carts M A, Marshall C J, Hansen D L, Jobe K C M, McKay A L, Niu G F, Reed R A, Randall B A, Burfield C A, Lindberg M D, Gilbert B K and Daniel E S 2006 IEEE Trans. Nucl. Sci. 53 3400
[12]	Reed R A, Marshall P W, Pickel J C, Carts M A, Fodness B, Niu G F, Fritz K, Vizkelethy G, Dodd P E, Irwin T L, Cressler J D, Krithivasan R, Riggs P A, Prairie J, Randall B A, Gilbert B K and Label K A 2003 IEEE Trans. Nucl. Sci. 50 2184
[13]	Sutton A K,Bellini M, Cressler J D, Pellish J A, Reed R A, Marshall P W, Niu G F, Vizkelethy G, Turowski M and Raman A 2007 IEEE Trans. Nucl. Sci. 54 2044
[14]	Zhang J X, Guo H X, Guo Q, Wen L, Cui J W, Xi S B, Wang X and Deng W 2013 Acta Phys. Sin. 62 048501 (in Chinese)
[15]	Sun Y B, Fu J, Xu J, Wang Y D, Zhou W, Zhang W, Cui J, Li G Q, Liu Z H, Yu Y T, Ma Y Q, Feng G Q and Han J W 2013 Chin. Phys. B 22 056103
[16]	Zhang J X, Guo H X, Wen L, Guo Q, Cui J W, Fan X, Xiao Y, Xi S B, Wang X and Deng W 2013 High Power Laser and Paticle Beams 25 2433
[17]	Pellish J A, Reed R A, McMorrow D, Melinger J S, Jenkins P, Sutton A K, Diestelhorst R M, Phillips S D, Cressler J D, Pouget V, Pate N D, Kozub J A, Mendenhall M H, Weller R A, Schrimpf R D, Marshall P W, Tipton A D and Niu G 2008 IEEE Trans. Nucl. Sci. 55 2936
[18]	Sutton A K, Krithivasan R, Marshall P W, Carts M A, Seidleck C, Ladbury R, Cressler J D, Marshall C J, Currie S, Reed R A, Guofu Niu, Randall B, Fritz K, McMorrow D and Gilbert B 2006 IEEE Trans. Nucl. Sci. 53 3277
[19]	Fu Q, Zhang W R, Jin D Y, Ding C B, Zhao Y X and Lu D 2014 Chin. Phys. B 23 114402

Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment

Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 19

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	魏佳男, 贺朝会, 李培, 李永宏. Research on SEE mitigation techniques using back junction and p⁺ buffer layer in domestic non-DTI SiGe HBTs by TCAD[J]. 中国物理B, 2019, 28(6): 68503-068503.
[2]	罗捷, 王铁山, 李东青, 刘天奇, 侯明东, 孙友梅, 段敬来, 姚会军, 习凯, 叶兵, 刘杰. Investigation of flux dependent sensitivity on single event effect in memory devices[J]. 中国物理B, 2018, 27(7): 76101-076101.
[3]	雷志锋, 张战刚, 恩云飞, 黄云. Mechanisms of atmospheric neutron-induced single event upsets in nanometric SOI and bulk SRAM devices based on experiment-verified simulation tool[J]. 中国物理B, 2018, 27(6): 66105-066105.
[4]	张晋新, 郭红霞, 潘霄宇, 郭旗, 张凤祁, 冯娟, 王信, 魏莹, 吴宪祥. Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor[J]. 中国物理B, 2018, 27(10): 108501-108501.
[5]	孙亚宾, 李小进, 张金中, 石艳玲. Improved high-frequency equivalent circuit model based on distributed effects for SiGe HBTs with CBE layout[J]. 中国物理B, 2017, 26(9): 98502-098502.
[6]	张晋新, 贺朝会, 郭红霞, 李培, 郭宝龙, 吴宪祥. Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor[J]. 中国物理B, 2017, 26(8): 88502-088502.
[7]	何益百, 陈书明. Experimental verification of the parasitic bipolar amplification effect in PMOS single event transients[J]. , 2014, 23(7): 79401-079401.
[8]	燕少安, 唐明华, 赵雯, 郭红霞, 张万里, 徐新宇, 王旭东, 丁浩, 陈建伟, 李正, 周益春. Single event effect in a ferroelectric-gate field-effect transistor under heavy-ion irradiation[J]. 中国物理B, 2014, 23(4): 46104-046104.
[9]	吴士玉, 刘凯欣, 陈千一. A three-dimensional Eulerian method for the numerical simulation of high-velocity impact problems[J]. 中国物理B, 2014, 23(3): 34601-034601.
[10]	孙亚宾, 付军, 许军, 王玉东, 周卫, 张伟, 崔杰, 李高庆, 刘志弘. Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation[J]. 中国物理B, 2014, 23(11): 116104-116104.
[11]	付强, 张万荣, 金冬月, 丁春宝, 赵彦晓, 鲁东. Collector optimization for tradeoff between breakdown voltage and cut-off frequency in SiGe HBT[J]. 中国物理B, 2014, 23(11): 114402-114402.
[12]	张战刚, 刘杰, 侯明东, 孙友梅, 赵发展, 刘刚, 韩郑生, 耿超, 刘建德, 习凯, 段敬来, 姚会军, 莫丹, 罗捷, 古松, 刘天奇. Large energy-loss straggling of swift heavy ions in ultra-thin active silicon layers[J]. 中国物理B, 2013, 22(9): 96103-096103.
[13]	张战刚, 刘杰, 侯明东, 孙友梅, 苏弘, 段敬来, 莫丹, 姚会军, 罗捷, 古松, 耿超, 习凯. Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation[J]. 中国物理B, 2013, 22(8): 86102-086102.
[14]	孙亚宾, 付军, 许军, 王玉东, 周卫, 张伟, 崔杰, 李高庆, 刘志弘, 余永涛, 马英起, 封国强, 韩建伟. A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor[J]. 中国物理B, 2013, 22(5): 56103-056103.
[15]	高博, 刘刚, 王立新, 韩郑生, 宋李梅, 张彦飞, 腾瑞, 吴海舟. Radiation damage effects on power VDMOS devices with composite SiO₂–Si₃N₄ films[J]. 中国物理B, 2013, 22(3): 36103-036103.