中国物理B ›› 2013, Vol. 22 ›› Issue (9): 97701-097701.doi: 10.1088/1674-1056/22/9/097701

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Performance improvement of charge trap flash memory by using a composition-modulated high-k trapping layer

汤振杰a, 李荣b, 殷江c   

  1. a College of Physics and Electronic Engineering, Anyang Normal University, Anyang 455000, China;
    b School of Mathematics and Statistics, Anyang Normal University, Anyang 455000, China;
    c Department of Materials Science and Engineering, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
  • 收稿日期:2013-01-20 修回日期:2013-03-25 出版日期:2013-07-26 发布日期:2013-07-26
  • 基金资助:
    Project supported by the Science and Technology Research Key Project of Education Department of Henan, China (Grant No. 13A140021), the National Natural Science Foundation of China (Grant Nos. 50972054 and 61176124), the National Basic Research Program of China (Grant No. 2010CB934201), and the State Key Program for Science and Technology of China (Grant No. 2009ZX02039-004).

Performance improvement of charge trap flash memory by using a composition-modulated high-k trapping layer

Tang Zhen-Jie (汤振杰)a, Li Rong (李荣)b, Yin Jiang (殷江)c   

  1. a College of Physics and Electronic Engineering, Anyang Normal University, Anyang 455000, China;
    b School of Mathematics and Statistics, Anyang Normal University, Anyang 455000, China;
    c Department of Materials Science and Engineering, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
  • Received:2013-01-20 Revised:2013-03-25 Online:2013-07-26 Published:2013-07-26
  • Contact: Tang Zhen-Jie E-mail:zjtang@hotmail.com
  • Supported by:
    Project supported by the Science and Technology Research Key Project of Education Department of Henan, China (Grant No. 13A140021), the National Natural Science Foundation of China (Grant Nos. 50972054 and 61176124), the National Basic Research Program of China (Grant No. 2010CB934201), and the State Key Program for Science and Technology of China (Grant No. 2009ZX02039-004).

PDF (PC)

662

赞

摘要： A composition-modulated (HfO2)x(Al2O3)1-x charge trapping layer is proposed for charge trap flash memory by controlling the Al atom content to form a peak and valley shaped band gap. It is found that the memory device using the composition-modulated (HfO2)x(Al2O3)1-x as the charge trapping layer exhibits a larger memory window of 11.5 V, improves data retention even at high temperature, and enhances the program/erase speed. Improvements of the memory characteristics are attributed to the special band-gap structure resulting from the composition-modulated trapping layer. Therefore, the composition-modulated charge trapping layer may be useful in future nonvolatile flash memory device application.

关键词: composition modulated films, memory device, charge trap, atomic layer deposition

Abstract: A composition-modulated (HfO2)x(Al2O3)1-x charge trapping layer is proposed for charge trap flash memory by controlling the Al atom content to form a peak and valley shaped band gap. It is found that the memory device using the composition-modulated (HfO2)x(Al2O3)1-x as the charge trapping layer exhibits a larger memory window of 11.5 V, improves data retention even at high temperature, and enhances the program/erase speed. Improvements of the memory characteristics are attributed to the special band-gap structure resulting from the composition-modulated trapping layer. Therefore, the composition-modulated charge trapping layer may be useful in future nonvolatile flash memory device application.

Key words: composition modulated films, memory device, charge trap, atomic layer deposition

中图分类号:  (For silicon electronics)

  • 77.55.df
81.20.Fw (Sol-gel processing, precipitation) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))