中国物理B ›› 2013, Vol. 22 ›› Issue (9): 97701-097701.doi: 10.1088/1674-1056/22/9/097701
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
汤振杰a, 李荣b, 殷江c
Tang Zhen-Jie (汤振杰)a, Li Rong (李荣)b, Yin Jiang (殷江)c
摘要: A composition-modulated (HfO2)x(Al2O3)1-x charge trapping layer is proposed for charge trap flash memory by controlling the Al atom content to form a peak and valley shaped band gap. It is found that the memory device using the composition-modulated (HfO2)x(Al2O3)1-x as the charge trapping layer exhibits a larger memory window of 11.5 V, improves data retention even at high temperature, and enhances the program/erase speed. Improvements of the memory characteristics are attributed to the special band-gap structure resulting from the composition-modulated trapping layer. Therefore, the composition-modulated charge trapping layer may be useful in future nonvolatile flash memory device application.
中图分类号: (For silicon electronics)