›› 2015, Vol. 24 ›› Issue (4): 47304-047304.doi: 10.1088/1674-1056/24/4/047304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

An ultra-low specific on-resistance trench LDMOS with a U-shaped gate and accumulation layer

李鹏程, 罗小蓉, 罗尹春, 周坤, 石先龙, 张彦辉, 吕孟山   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • 收稿日期:2014-06-09 修回日期:2014-10-17 出版日期:2015-04-05 发布日期:2015-04-05
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61176069 and 61376079) and the Program for New Century Excellent Talents at the University of Ministry of Education of China (Grant No. NCET-11-0062).

An ultra-low specific on-resistance trench LDMOS with a U-shaped gate and accumulation layer

Li Peng-Cheng (李鹏程), Luo Xiao-Rong (罗小蓉), Luo Yin-Chun (罗尹春), Zhou Kun (周坤), Shi Xian-Long (石先龙), Zhang Yan-Hui (张彦辉), Lv Meng-Shan (吕孟山)   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • Received:2014-06-09 Revised:2014-10-17 Online:2015-04-05 Published:2015-04-05
  • Contact: Luo Xiao-Rong E-mail:xrluo@uestc.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61176069 and 61376079) and the Program for New Century Excellent Talents at the University of Ministry of Education of China (Grant No. NCET-11-0062).

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摘要： An ultra-low specific on-resistance (Ron,sp) oxide trench-type silicon-on-insulator (SOI) lateral double-diffusion metal-oxide semiconductor (LDMOS) with an enhanced breakdown voltage (BV) is proposed and investigated by simulation. There are two key features in the proposed device: one is a U-shaped gate around the oxide trench, which extends from source to drain (UG LDMOS); the other is an N pillar and P pillar located in the trench sidewall. In the on-state, electrons accumulate along the U-shaped gate, providing a continuous low resistance current path from source to drain. The Ron,sp is thus greatly reduced and almost independent of the drift region doping concentration. In the off-state, the N and P pillars not only enhance the electric field (E-field) strength of the trench oxide, but also improve the E-field distribution in the drift region, leading to a significant improvement in the BV. The BV of 662 V and Ron,sp of 12.4 mΩ · cm2 are achieved for the proposed UG LDMOS. The BV is increased by 88.6% and the Ron,sp is reduced by 96.4%, compared with those of the conventional trench LDMOS (CT LDMOS), realizing the state-of-the-art trade-off between BV and Ron,sp.

关键词: trench, U-shaped gate, specific on-resistance, breakdown voltage

Abstract: An ultra-low specific on-resistance (Ron,sp) oxide trench-type silicon-on-insulator (SOI) lateral double-diffusion metal-oxide semiconductor (LDMOS) with an enhanced breakdown voltage (BV) is proposed and investigated by simulation. There are two key features in the proposed device: one is a U-shaped gate around the oxide trench, which extends from source to drain (UG LDMOS); the other is an N pillar and P pillar located in the trench sidewall. In the on-state, electrons accumulate along the U-shaped gate, providing a continuous low resistance current path from source to drain. The Ron,sp is thus greatly reduced and almost independent of the drift region doping concentration. In the off-state, the N and P pillars not only enhance the electric field (E-field) strength of the trench oxide, but also improve the E-field distribution in the drift region, leading to a significant improvement in the BV. The BV of 662 V and Ron,sp of 12.4 mΩ · cm2 are achieved for the proposed UG LDMOS. The BV is increased by 88.6% and the Ron,sp is reduced by 96.4%, compared with those of the conventional trench LDMOS (CT LDMOS), realizing the state-of-the-art trade-off between BV and Ron,sp.

Key words: trench, U-shaped gate, specific on-resistance, breakdown voltage

中图分类号:  (Semiconductor-insulator-semiconductor structures)

  • 73.40.Ty
85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.Tv (Field effect devices)