Perfect GMR effect in gapped graphene-based ferromagnetic—normal—ferromagnetic junctions

doi:10.1088/1674-1056/24/4/047305

摘要/Abstract

摘要： We investigate the quantum transport property in gapped graphene-based ferromagnetic/normal/ferromagnetic (FG/NG/FG) junctions by using Dirac-Bogoliubov-de Gennes equation. The graphene is fabricated on SiC and BN substrates separately, so carriers in FG/NG/FG structures are considered as massive relativistic particles. Transmission probability, charge, and spin conductances are studied as a function of exchange energy of ferromagnets (h), size of graphene gap, and thickness of normal graphene region (L) respectively. Using the experimental values of Fermi energy in the normal graphene part (E_FN～ 400 meV) and energy gap in graphene (260 meV for SiC and 50 meV for BN substrate), it is shown that this structure can be used for both spin-up and spin-down polarized current. The latter case has different behavior of gapped FG/NG/FG from that of gapless FG/NG/FG structures. Also perfect charge giant magnetoresistance is observed in a range of E_FN-mv_F²<h<E_FN+mv_F².

关键词: graphene, spin-polarized current, giant magnetoresistance, nanoscale structures

Abstract: We investigate the quantum transport property in gapped graphene-based ferromagnetic/normal/ferromagnetic (FG/NG/FG) junctions by using Dirac-Bogoliubov-de Gennes equation. The graphene is fabricated on SiC and BN substrates separately, so carriers in FG/NG/FG structures are considered as massive relativistic particles. Transmission probability, charge, and spin conductances are studied as a function of exchange energy of ferromagnets (h), size of graphene gap, and thickness of normal graphene region (L) respectively. Using the experimental values of Fermi energy in the normal graphene part (E_FN～ 400 meV) and energy gap in graphene (260 meV for SiC and 50 meV for BN substrate), it is shown that this structure can be used for both spin-up and spin-down polarized current. The latter case has different behavior of gapped FG/NG/FG from that of gapless FG/NG/FG structures. Also perfect charge giant magnetoresistance is observed in a range of E_FN-mv_F²<h<E_FN+mv_F².

Key words: graphene, spin-polarized current, giant magnetoresistance, nanoscale structures

中图分类号: (Electronic transport in nanoscale materials and structures)

73.63.-b

72.25.-b (Spin polarized transport) 72.80.Vp (Electronic transport in graphene)

Hossein Karbaschi, Gholam Reza Rashedi. Perfect GMR effect in gapped graphene-based ferromagnetic—normal—ferromagnetic junctions[J]. , 2015, 24(4): 47305-047305.

Hossein Karbaschi, Gholam Reza Rashedi. Perfect GMR effect in gapped graphene-based ferromagnetic—normal—ferromagnetic junctions[J]. Chin. Phys. B, 2015, 24(4): 47305-047305.

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