Comparison between N2 and O2 anneals on the integrity of an Al2O3/Si3N4/SiO2/Si memory gate stack

doi:10.1088/1674-1056/23/8/088501

›› 2014, Vol. 23 ›› Issue (8): 88501-088501.doi: 10.1088/1674-1056/23/8/088501

• SPECIAL TOPI—International Conference on Nanoscience & Technology, China 2013 • 上一篇下一篇

Comparison between N₂ and O₂ anneals on the integrity of an Al₂O₃/Si₃N₄/SiO₂/Si memory gate stack

褚玉琼^a, 张满红^b, 霍宗亮^a, 刘明^a

a Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
b School of Electrical and Electronic Engineering, North China Electric Power University, Beijing 102206, China

收稿日期:2013-09-04 修回日期:2013-12-16 出版日期:2014-08-15 发布日期:2014-08-15
基金资助:
Project supported in part by the National Basic Research Program of China (Grant Nos. 2010CB934200 and 2011CBA00600), the National Natural Science Foundation of China (Grant Nos. 61176073 and 61176080), and the Director's Fund of the Institute of Microelectronics, Chinese Academy of Sciences.

Comparison between N₂ and O₂ anneals on the integrity of an Al₂O₃/Si₃N₄/SiO₂/Si memory gate stack

Chu Yu-Qiong (褚玉琼)^a, Zhang Man-Hong (张满红)^b, Huo Zong-Liang (霍宗亮)^a, Liu Ming (刘明)^a

a Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
b School of Electrical and Electronic Engineering, North China Electric Power University, Beijing 102206, China

Received:2013-09-04 Revised:2013-12-16 Online:2014-08-15 Published:2014-08-15
Contact: Zhang Man-Hong, Huo Zong-Liang, Liu Ming E-mail:zhangmanhong@ncepu.edu.cn;huozongliang@ime.ac.cn;liuming@ime.ac.cn
Supported by:
Project supported in part by the National Basic Research Program of China (Grant Nos. 2010CB934200 and 2011CBA00600), the National Natural Science Foundation of China (Grant Nos. 61176073 and 61176080), and the Director's Fund of the Institute of Microelectronics, Chinese Academy of Sciences.

摘要/Abstract

摘要： In this paper the endurance characteristics and trap generation are investigated to study the effects of different post-deposition anneals (PDAs) on the integrity of an Al₂O₃/Si₃N₄/SiO₂/Si memory gate stack. The flat-band voltage (V_fb) turnarounds are observed in both the programmed and erased states of the N₂-PDA device. In contrast, this turnaround is observed only in the erased state of the O₂-PDA device. The V_fb in the programmed state of the O₂-PDA device keeps increasing with increasing program/erase (P/E) cycles. Through the analyses of endurance characteristics and the low voltage round-trip current transients, it is concluded that in both kinds of device there are an unknown type of pre-existing characteristic deep traps and P/E stress-induced positive oxide charges. In the O₂-PDA device two extra types of trap are also found: the pre-existing border traps and the P/E stress-induced negative traps. Based on these four types of defects we can explain the endurance characteristics of two kinds of device. The switching property of pre-existing characteristic deep traps is also discussed.

关键词: charge trapping memory, post deposition anneal, endurance, traps

Abstract: In this paper the endurance characteristics and trap generation are investigated to study the effects of different post-deposition anneals (PDAs) on the integrity of an Al₂O₃/Si₃N₄/SiO₂/Si memory gate stack. The flat-band voltage (V_fb) turnarounds are observed in both the programmed and erased states of the N₂-PDA device. In contrast, this turnaround is observed only in the erased state of the O₂-PDA device. The V_fb in the programmed state of the O₂-PDA device keeps increasing with increasing program/erase (P/E) cycles. Through the analyses of endurance characteristics and the low voltage round-trip current transients, it is concluded that in both kinds of device there are an unknown type of pre-existing characteristic deep traps and P/E stress-induced positive oxide charges. In the O₂-PDA device two extra types of trap are also found: the pre-existing border traps and the P/E stress-induced negative traps. Based on these four types of defects we can explain the endurance characteristics of two kinds of device. The switching property of pre-existing characteristic deep traps is also discussed.

Key words: charge trapping memory, post deposition anneal, endurance, traps

中图分类号: (Semiconductor devices)

85.30.-z

褚玉琼, 张满红, 霍宗亮, 刘明. Comparison between N₂ and O₂ anneals on the integrity of an Al₂O₃/Si₃N₄/SiO₂/Si memory gate stack[J]. , 2014, 23(8): 88501-088501.

Chu Yu-Qiong (褚玉琼), Zhang Man-Hong (张满红), Huo Zong-Liang (霍宗亮), Liu Ming (刘明). Comparison between N₂ and O₂ anneals on the integrity of an Al₂O₃/Si₃N₄/SiO₂/Si memory gate stack[J]. Chin. Phys. B, 2014, 23(8): 88501-088501.

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Comparison between N₂ and O₂ anneals on the integrity of an Al₂O₃/Si₃N₄/SiO₂/Si memory gate stack

Comparison between N₂ and O₂ anneals on the integrity of an Al₂O₃/Si₃N₄/SiO₂/Si memory gate stack

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