High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation

doi:10.1088/1674-1056/ab68c0

中国物理B ›› 2020, Vol. 29 ›› Issue (3): 37301-037301.doi: 10.1088/1674-1056/ab68c0

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation

Xin-Yu Liu(刘新宇), Ji-Long Hao(郝继龙), Nan-Nan You(尤楠楠), Yun Bai(白云), Yi-Dan Tang(汤益丹), Cheng-Yue Yang(杨成樾), Sheng-Kai Wang(王盛凯)

1 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2019-12-11 修回日期:2020-01-07 出版日期:2020-03-05 发布日期:2020-03-05
通讯作者: Xin-Yu Liu, Sheng-Kai Wang E-mail:xyliu@ime.ac.cn;wangshengkai@ime.ac.cn
基金资助:
Project supported in part by the National Key Research and Development Program of China (Grant No. 2016YFB0100601), the National Natural Science Foundation of China (Grant Nos. 61674169 and 61974159), and the Support from a Grant-In-Aid from the Youth Innovation Promotion Association of the Chinese Academy of Sciences.

High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation

Xin-Yu Liu(刘新宇)^1,2, Ji-Long Hao(郝继龙)^1,2, Nan-Nan You(尤楠楠)^1,2, Yun Bai(白云)^1,2, Yi-Dan Tang(汤益丹)^1,2, Cheng-Yue Yang(杨成樾)^1,2, Sheng-Kai Wang(王盛凯)^1,2

1 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China

Received:2019-12-11 Revised:2020-01-07 Online:2020-03-05 Published:2020-03-05
Contact: Xin-Yu Liu, Sheng-Kai Wang E-mail:xyliu@ime.ac.cn;wangshengkai@ime.ac.cn
Supported by:
Project supported in part by the National Key Research and Development Program of China (Grant No. 2016YFB0100601), the National Natural Science Foundation of China (Grant Nos. 61674169 and 61974159), and the Support from a Grant-In-Aid from the Youth Innovation Promotion Association of the Chinese Academy of Sciences.

摘要/Abstract

摘要： The microwave plasma oxidation under the relatively high pressure (6 kPa) region is introduced into the fabrication process of SiO₂/4H-SiC stack. By controlling the oxidation pressure, species, and temperature, the record low density of interface traps (~ 4×10¹⁰ cm^-2·eV^-1@E_c - 0.2 eV) is demonstrated on SiO₂/SiC stack formed by microwave plasma oxidation. And high quality SiO₂ with very flat interface (0.27-nm root-mean-square roughness) is obtained. High performance SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) with peak field effect mobility of 44 cm^-2·eV^-1 is realized without additional treatment. These results show the potential of a high-pressure plasma oxidation step for improving the channel mobility in SiC MOSFETs.

关键词: SiC, plasma oxidation, interface traps, MOSFET

Abstract: The microwave plasma oxidation under the relatively high pressure (6 kPa) region is introduced into the fabrication process of SiO₂/4H-SiC stack. By controlling the oxidation pressure, species, and temperature, the record low density of interface traps (~ 4×10¹⁰ cm^-2·eV^-1@E_c - 0.2 eV) is demonstrated on SiO₂/SiC stack formed by microwave plasma oxidation. And high quality SiO₂ with very flat interface (0.27-nm root-mean-square roughness) is obtained. High performance SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) with peak field effect mobility of 44 cm^-2·eV^-1 is realized without additional treatment. These results show the potential of a high-pressure plasma oxidation step for improving the channel mobility in SiC MOSFETs.

Key words: SiC, plasma oxidation, interface traps, MOSFET

中图分类号: (Electron states at surfaces and interfaces)

73.20.-r

73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 73.50.Dn (Low-field transport and mobility; piezoresistance)

刘新宇, 郝继龙, 尤楠楠, 白云, 汤益丹, 杨成樾, 王盛凯. High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation[J]. 中国物理B, 2020, 29(3): 37301-037301.

Xin-Yu Liu(刘新宇), Ji-Long Hao(郝继龙), Nan-Nan You(尤楠楠), Yun Bai(白云), Yi-Dan Tang(汤益丹), Cheng-Yue Yang(杨成樾), Sheng-Kai Wang(王盛凯). High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation[J]. Chin. Phys. B, 2020, 29(3): 37301-037301.

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High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation

High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation

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